Method of manufacturing transparent conductive thin film

Abstract

An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn 2 C 2 O 4 ) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and has a high doping efficiency.

What is claimed is: 
     
       1. A method of manufacturing a transparent conductive thin film, comprising:
 adding Sn 2 C 2 O 4  into an aqueous solution of acetic acid and then performing stirring to form a suspend system; 
 adding ammonia into the suspend system, and then performing stirring to form a clear solution, wherein a pH value of the clear solution is in the range of 6.5 to 7.5; 
 adding trifluoroacetic acid into the clear solution, and then performing stirring to form a sol system containing fluorine ion; and 
 coating the sol system containing fluorine ions on a substrate, and then sequentially performing a dry process and a heat treatment process to form a SnO 2 :F thin film on the substrate, wherein the treatment temperature of the heat treatment process is 300° C., and the treatment time period of the heat treatment process is 5 min. 
 
     
     
       2. The method according to  claim 1 , wherein the method of coating the sol system containing fluorine ions on a substrate is a spin-coating method. 
     
     
       3. The method according to  claim 1 , wherein the heat treatment process comprises:
 placing the substrate in a sealed heat treatment container; 
 performing heat treatment on the substrate; and 
 controlling a partial pressure of HF gas in the heat treatment container, to control a doping efficiency of F ions in the SnO 2 :F thin film, wherein the HF gas is generated by volatilization of the heated organic substance containing fluorine in the sol system coated on the substrate. 
 
     
     
       4. The method according to  claim 1 , further comprising:
 repeating the step of coating the sol system containing fluorine ions on the substrate and then sequentially performing the dry process and the heat treatment process so as to make the formed SnO 2 :F thin film reach a designated thickness.