Semiconductor device and method of manufacturing the same, and electronic apparatus

Abstract

A semiconductor device comprising a first semiconductor section including a first wiring layer at one side thereof, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other, a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a first semiconductor section including at least one first wiring layer; 
 a second semiconductor section including at least one second wiring layer, the first and second semiconductor sections being secured together; 
 a plurality of first conductive materials that extend through a device layer of the first semiconductor section to a connection point in the first wiring layer of the first semiconductor section, and a plurality of second conductive materials that extend through the first semiconductor section to a connection point in the second wiring layer of the second semiconductor section, wherein the first and second conductive materials are each arranged alternately in both of a first direction and a second direction across the first semiconductor substrate, the first and second directions being orthogonal to each other. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the first and second semiconductor sections are secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other. 
     
     
       3. The semiconductor device of  claim 1 , wherein the first semiconductor section and the second semiconductor section are secured by plasma bonding. 
     
     
       4. The semiconductor device of  claim 1 , wherein the first semiconductor section and the second semiconductor section are secured by an adhesive. 
     
     
       5. The semiconductor device of  claim 1 , wherein the first semiconductor section includes a pixel array. 
     
     
       6. The semiconductor device of  claim 5 , wherein the second semiconductor section includes a logic circuit. 
     
     
       7. The semiconductor device of  claim 6 , wherein the pixel array and the logic circuit are electrically connected to one another. 
     
     
       8. The semiconductor device of  claim 7 , wherein the first conductive materials connect an uppermost first wiring layer of the first semiconductor section and an uppermost second wiring layer of the second semiconductor section. 
     
     
       9. The semiconductor device according to  claim 8 , wherein a surface of the first conductive materials or the second conductive materials is connected by a trench on the first semiconductor section. 
     
     
       10. The semiconductor device according to  claim 9 , further comprising a pad connected to the first conductive material and the second conductive material. 
     
     
       11. The semiconductor device according to  claim 10 , wherein the pad is exposed at an upper side of the first semiconductor section. 
     
     
       12. The semiconductor device according to  claim 9 , wherein the trench is a Cu filled trench. 
     
     
       13. The semiconductor device according to  claim 1 ,
 the first wiring layer includes Cu, 
 the second wiring layer includes Cu. 
 
     
     
       14. The semiconductor device according to  claim 1 , further comprising an insulating layer covering at least part of the first wiring layer or the second wiring layer. 
     
     
       15. The semiconductor device according to  claim 14 , wherein the insulating layer is SiO. 
     
     
       16. The semiconductor device of  claim 1 , wherein the first conductive material and the second conductive material includes one of W, Al, and Au. 
     
     
       17. The semiconductor device of  claim 7 , wherein the pixel array includes a photodiode and a plurality of pixel transistors. 
     
     
       18. The semiconductor device of  claim 7 , wherein the logic circuit includes a control circuit. 
     
     
       19. The semiconductor device of  claim 1 , wherein the first conductive material and the second conductive material have substantively a same diameter. 
     
     
       20. The semiconductor device of  claim 1 , wherein the first semiconductor section has a thickness smaller than that of the second semiconductor section. 
     
     
       21. A semiconductor device, comprising:
 a first semiconductor section including at least a first wiring layer, wherein the first semiconductor section includes a pixel array; 
 a second semiconductor section including at least a second wiring layer, wherein the first and second semiconductor sections are secured to one another; 
 a plurality of connection wirings, wherein each connection wiring in the plurality of connection wirings includes a first connection conductor interconnected to a connection pad included in the first wiring layer, a second connection conductor interconnected to a connection pad included in the second wiring layer, and a link conductor interconnecting the first and second connection conductors, and 
 wherein the first connection conductors and the second connection conductors of the plurality of connection wirings are alternately arranged in horizontal and vertical directions of the pixel array. 
 
     
     
       22. A semiconductor device, comprising:
 a first semiconductor section including a first wiring layer; 
 a second semiconductor section including a second wiring layer, the first and second semiconductor sections being secured together; 
 a plurality of first conductive materials that extend through a device layer of the first semiconductor section to a connection point in the first wiring layer of the first semiconductor section, and a plurality of second conductive materials that extend through the first semiconductor section to a connection point in the second wiring layer of the second semiconductor section, and a pad connected to at least the first conductive materials and at least the second conductive materials, wherein the first and second conductive materials are each arranged alternately in both of a first direction and a second direction across the first semiconductor substrate, the first and second directions being orthogonal to each other.