Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same

Abstract

A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.

What is claimed is: 
     
       1. A manufacturing apparatus of a silicon thin film comprising:
 a silicon base material introduction part to supply a silicon base material; 
 a dual crucible for silicon melting mounted under the silicon base material introduction part; 
 a crucible heating part to heat the dual crucible for the silicon melting, to form molten silicon by melting the silicon base material; 
 a molten silicon storage part to tap the molten silicon stored therein as a preset amount of silicon melt after storing the molten silicon therein; 
 a transfer substrate disposed under the molten silicon storage part, to transfer the tapped silicon melt; 
 a gate bar to open and close an outlet part configured to the dual crucible; and 
 a thin film forming part to form a silicon thin film by cooling the silicon melt transferred by the transfer substrate, 
 wherein the dual crucible for the silicon melting comprises a graphite crucible formed in a container shape with an open top and a bottom having the outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part; and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein. 
 
     
     
       2. The manufacturing apparatus of the silicon thin film according to  claim 1 , wherein the slope part has a slope of 3° or more with respect to a top surface of the outlet part. 
     
     
       3. The manufacturing apparatus of the silicon thin film according to  claim 1 , wherein the crucible heating part induction-heats or resistance-heats the dual crucible for the silicon melting. 
     
     
       4. The manufacturing apparatus of the silicon thin film according to  claim 3 , wherein the crucible heating part comprises a coil to surround an outer wall of the dual crucible for the silicon melting. 
     
     
       5. The manufacturing apparatus of the silicon thin film according to  claim 1 , wherein the crucible heating part heats the dual crucible for the silicon melting to make a surface temperature of the molten silicon have a range of 1300° C.˜1600° C. 
     
     
       6. The manufacturing apparatus of the silicon thin film according to  claim 1 , wherein the transfer substrate is formed of a predetermined material having a different thermal expansion coefficient than a thermal expansion coefficient of the silicon. 
     
     
       7. The manufacturing apparatus of the silicon thin film according to  claim 6 , wherein the transfer substrate is formed of a predetermined material selected from a group configured of metal, ceramic, SiC, Si 3 N 4 , graphite, Al 2 O 3  and molybdenum (Mo). 
     
     
       8. The manufacturing apparatus of the silicon thin film according to  claim 1 , wherein the temperature of the transfer substrate has a range of 700° C.˜1500° C.