Power module package

Abstract

Disclosed herein is a power module package including: a substrate having a ceramic layer formed in one surface thereof; a circuit pattern formed on the ceramic layer; a first lead frame having one side contacting the circuit pattern and the other side protruding toward the outside; and a first semiconductor chip mounted on one side of the first lead frame.

What is claimed is: 
     
       1. A power module package, comprising:
 a substrate having a ceramic layer having thickness from 1 micron to 500 microns and formed in one surface thereof; 
 a circuit pattern formed on the ceramic layer; 
 a first lead frame having one side contacting the circuit pattern and the other side protruding toward the outside; 
 a first semiconductor chip which is a power device and mounted on one side of the first lead frame; 
 a second lead frame spaced apart from the first lead frame and electrically connected to the first semiconductor chip; and 
 a second semiconductor chip which is a control device and mounted on the second lead frame, 
 wherein the substrate is one selected from the group consisting of a metal substrate, a printed circuit board, an insulated metal substrate and a pre-molded substrate and combinations thereof, and 
 wherein the substrate and the circuit pattern are formed only under the first lead frame, and the ceramic layer is not sintered using a direct bonded copper substrate. 
 
     
     
       2. The power module package as set forth in  claim 1 , further comprising:
 a bonding layer formed between the circuit pattern and the first lead frame. 
 
     
     
       3. The power module package as set forth in  claim 1 , wherein the circuit pattern includes an electroless plating layer and an electroplating layer. 
     
     
       4. The power module package as set forth in  claim 1 , wherein the first lead frame and the second lead frame are formed to have a step therebetween. 
     
     
       5. The power module package as set forth in  claim 1 , further comprising:
 a molding material formed to surround the first semiconductor chip from a side of the substrate. 
 
     
     
       6. The power module package as set forth in  claim 1 , wherein the substrate is a metal substrate.