Semiconductor device

Abstract

A semiconductor device includes: a die pad comprised of a metal, and having at least one cutout portion in its peripheral edge portion, and a protruding portion formed by the cutout portion so as to protrude laterally from the peripheral edge portion; an inner lead having at its end a bonding pad that is placed in the cutout portion with an interval between the bonding pad and the die pad; a semiconductor chip held on the die pad so that a center position of the semiconductor chip is located on the protruding portion side with respect to a center position of the die pad; and a wire configured to electrically connect the semiconductor chip to the bonding pad.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a die pad comprised of a metal, and having at least one cutout portion in its peripheral edge portion, and a protruding portion formed by the cutout portion so as to protrude laterally from the peripheral edge portion; 
 a first inner lead having at its end a bonding pad that is placed in the cutout portion with an interval between the bonding, pad and the die pad; 
 a semiconductor chip held on the die pad so that a center position of the semiconductor chip is located on the protruding portion side with respect to a center position of the die pad; and 
 a wire configured to electrically connect the semiconductor chip to the bonding pad, 
 wherein the bonding pad has a first extended portion extending along a side surface of the die pad with an interval therebetween, 
 the side surface of the die pad extends from the cutout portion in a first direction, 
 the die pad further includes a suspension lead extending from the protruding portion, 
 a width of the protruding portion is greater than a width of the suspension lead, 
 the semiconductor chip is disposed on at least a portion of the protruding portion, and 
 in a plan view, a length of the first extended portion in the first direction is greater than a length of the side surface of the die pad in the first direction. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein a ground potential is applied to the die pad, and
 a capacitive element portion is formed by the first extended portion and the side surface of the die pad. 
 
     
     
       3. The semiconductor device of  claim 1 , wherein an upper surface of the die pad and an upper surface of the bonding pad are located at the same height from a lower surface of the die pad, and
 the die pad has a greater thickness than the first inner lead. 
 
     
     
       4. The semiconductor device of claim wherein the cutout portion has a planar shape corresponding to two sides of a quadrilateral, one side of a triangle, a concave circular arc, or a convex circular arc. 
     
     
       5. The semiconductor device of  claim 1 , wherein the suspension lead includes a bent portion. 
     
     
       6. The semiconductor device of  claim 1 , wherein the first inner lead further includes a second extended portion physically connected to the bonding pad. 
     
     
       7. The semiconductor device of  claim 6 , wherein the first extended portion extends parallel to the second extended portion in a plan view. 
     
     
       8. The semiconductor device of  claim 6 , wherein the second extended portion includes a bent portion. 
     
     
       9. The semiconductor device of  claim 6 , wherein the second extended portion extends from the bonding pad at an intermediate part of the bonding pad. 
     
     
       10. The semiconductor device of  claim 6 , wherein the die pad further includes a suspension lead extending from the protruding portion. 
     
     
       11. The semiconductor device of  claim 10 , wherein the suspension lead extends parallel to the second extended portion in a plan view. 
     
     
       12. The semiconductor device of  claim 1 , wherein the first extended portion functions as an open-circuited stub. 
     
     
       13. The semiconductor device of  claim 1 , wherein an end of the first extended portion and an end of the die pad arc aligned in a plan view. 
     
     
       14. The semiconductor device of  claim 1 , wherein the first extended portion has a portion which is thicker than a portion oldie bonding pad placed in the cutout portion. 
     
     
       15. The semiconductor device of  claim 1 , wherein the bonding pad and the first extended portion form an L-shape in a plan view. 
     
     
       16. The semiconductor device, of  claim 1 , wherein the bonding pad extends in a first direction in a plan view, and the first extended portion extends in a second direction in a plan view, and
 the second direction and the first direction are different. 
 
     
     
       17. A semiconductor device, comprising:
 a die pad comprised ala metal, and having at least one cutout portion hi its peripheral edge portion, and a protruding portion formed by the cutout portion; 
 a first inner lead having a bonding pad that is placed in the cutout portion with an interval between the bonding pad and the die pad; 
 a semiconductor chip held on the die pad; and 
 a wire configured to electrically connect the semiconductor chip to the bonding pad, 
 wherein the bonding pad has a first extended portion extending along a side surface of the die pad with an interval therebetween, 
 the side surface of the die pad extends from the cutout portion in a first direction, and 
 in a plain view, a length of the first extended portion in the first direction is greater than a length of the side surface of the die pad in the first direction. 
 
     
     
       18. The semiconductor device of  claim 17 , wherein the first inner lead further includes a second extended portion physically connected to the bonding pad. 
     
     
       19. The semiconductor device of  claim 18 , wherein the second extended portion extends from the bonding pad at an intermediate part of the bonding pad. 
     
     
       20. The semiconductor device of  claim 17 , wherein the bonding pad extends in a is direction in a plan view, and the first extended portion extends in a second direction in a plan view, and
 the second direction and the first direction are different. 
 
     
     
       21. The semiconductor device of  claim 17 , wherein a center position of the semiconductor chip is located on the protruding portion side with respect to a center position of the die pad. 
     
     
       22. The semiconductor device of  claim 17 , wherein the die pad further includes a suspension lead extending from the protruding portion, and a width of the protruding portion is greater than a width of the suspension lead. 
     
     
       23. The semiconductor device of  claim 17 , wherein the semiconductor chip is disposed on at least a portion of the protruding portion.