Donor substrate for transfer and manufacturing method of organic light emitting diode display

Abstract

A donor substrate includes: a support layer; a first light absorption layer disposed on the support layer; a buffer layer disposed on the first absorption layer; a second light absorption layer disposed on the buffer layer; and a transfer layer disposed on the second absorption layer, wherein the buffer layer includes a transparent oxide film.

What is claimed is: 
     
       1. A donor substrate comprising:
 a support layer; 
 a first absorption layer disposed on the support layer; 
 a buffer layer disposed on the first absorption layer, wherein the buffer layer comprises a transparent oxide film; 
 a second absorption layer disposed on the buffer layer; 
 a transfer layer disposed on the second absorption layer; and 
 a reflection layer disposed on the support layer, wherein the reflection layer is patterned to form an opening, and the first absorption layer, the buffer layer, and the second absorption layer are disposed in the opening. 
 
     
     
       2. The donor substrate of  claim 1  further comprising a protection layer disposed on the second absorption layer. 
     
     
       3. The donor substrate of  claim 2 , wherein each of the first absorption layer and the second absorption layer comprises at least one of molybdenum, chromium, tungsten, or titanium. 
     
     
       4. The donor substrate of  claim 3 , wherein the buffer layer comprises at least one of an indium-tin oxide film, an indium-zinc oxide film, or an oxide film comprising silicon. 
     
     
       5. The donor substrate of  claim 4 , wherein the transfer layer comprises an organic light emitting material. 
     
     
       6. A method of manufacturing an organic light emitting diode (OLED) display, the method comprising:
 forming a donor substrate including a support layer, a light absorption layer disposed on the support layer, and a transfer layer disposed on the light absorption layer, the light absorption layer comprising a first absorption layer, a buffer layer, and a second absorption layer, wherein the buffer layer comprises a transparent oxide film; 
 forming a reflection layer on the donor substrate, wherein the reflection layer is patterned to form an opening, and wherein the first absorption layer, the buffer layer and the second absorption layer are formed in the opening; 
 forming a pixel definition film and a pixel electrode on a transfer substrate; 
 disposing the donor substrate on the transfer substrate to allow the transfer layer and the pixel electrode to face each other; and 
 irradiating light to the donor substrate and forming an organic emission layer by transferring the transfer layer on the pixel electrode by heat of the light absorption layer. 
 
     
     
       7. The method of manufacturing of  claim 6 , further comprising forming a protection layer on the light absorption layer. 
     
     
       8. The method of manufacturing of  claim 7 , wherein the first absorption layer and the second absorption layer are each formed of at least one of molybdenum, chromium, tungsten, or titanium. 
     
     
       9. The method of manufacturing of  claim 8 , wherein the buffer layer is formed of at least one of an indium-tin oxide film, an indium-zinc oxide film, or an oxide film comprising silicon. 
     
     
       10. The method of manufacturing of  claim 9 , wherein the transfer layer includes an organic light emitting material. 
     
     
       11. The method of manufacturing of  claim 9 , wherein a wavelength of light ranges from about 400 nanometers to about 800 nanometers in the irradiating light to the donor substrate.