P
US9190458B2ActiveUtilityPatentIndex 73

Method and apparatus for providing a window with an at least partially transparent one side emitting OLED lighting and an IR sensitive photovoltaic panel

Assignee: SO FRANKYPriority: Apr 5, 2011Filed: Apr 3, 2012Granted: Nov 17, 2015
Est. expiryApr 5, 2031(~4.8 yrs left)· nominal 20-yr term from priority
Inventors:SO FRANKYKIM DO YOUNGPRADHAN BHABENDRA K
F21Y 2105/00F21S 9/037F21V 33/006F21Y 2115/15H10K 59/60H10F 77/244H10F 77/1433H10F 77/123H01L 31/022466H01L 31/035218H01L 2251/5323H01L 51/5271F21Y 2105/008H01L 27/3227H01L 31/0296H10K 2102/3031H10K 50/856H10K 50/11
73
PatentIndex Score
4
Cited by
38
References
103
Claims

Abstract

Embodiments of the subject invention relate to a method and apparatus for providing a apparatus that can function as a photovoltaic cell, for example during the day, and can provide solid state lighting, for example at night. The apparatus can therefore function as a lighting window. An embodiment can integrate an at least partially transparent one-side emitting OLED and a photovoltaic cell. The photovoltaic cell can be sensitive to infrared light, for example light having a wavelength greater than 1 μm. The apparatus can be arranged such that the one direction in which the OLED emits is toward the inside of a building or other structure and not out into the environment.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An apparatus, comprising:
 an organic light-emitting device (OLED); and 
 a photovoltaic (PV) cell, wherein the PV cell is sensitive to photons having one or more wavelengths, wherein the one or more wavelengths are in a PV cell wavelength range, and wherein at least one of the one or more wavelengths is greater than 0.70 μm, 
 wherein the OLED comprises:
 an organic light emitting layer; 
 a mirror; 
 an OLED anode electrode, wherein the OLED anode electrode is transparent to visible light; and 
 an OLED cathode electrode, wherein the OLED cathode electrode is transparent to visible light, 
 wherein the organic light emitting layer is positioned between the OLED anode electrode and the OLED cathode electrode, and wherein the mirror is positioned such that one of the OLED anode electrode and the OLED cathode electrode is between the mirror and the organic light emitting layer, and 
 wherein at least a portion of the mirror is reflective of a first visible light wavelength range, wherein at least a first portion of visible light emitted by the organic light emitting layer has a wavelength within the first visible light wavelength range, and wherein said portion of the mirror is transmissive to a second visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in at least a portion of the second visible light wavelength range. 
 
 
     
     
       2. The apparatus according to  claim 1 , wherein the apparatus is configured such that at least a portion of light incident on an input surface of the PV cell that passes through the PV cell and exits an output surface of the PV cell is incident on an input surface of the OLED and passes through the OLED. 
     
     
       3. The apparatus according to  claim 1 , wherein the PV cell is directly on the OLED such that the PV cell is in direct contact with the OLED. 
     
     
       4. An apparatus, comprising:
 an organic light-emitting device (OLED); and 
 a photovoltaic (PV) cell, wherein the PV cell is sensitive to photons having one or more wavelengths, wherein the one or more wavelengths are in a PV cell wavelength range, and wherein at least one of the one or more wavelengths is greater than 0.70 μm, 
 wherein the OLED comprises:
 an organic light emitting layer; 
 a mirror; 
 an OLED anode electrode, wherein the OLED anode electrode is transparent to visible light; 
 an OLED cathode electrode, wherein the OLED cathode electrode is transparent to visible light; and 
 at least one optically clear plastic film or at least one glass substrate between the PV cell and the OLED, 
 wherein the organic light emitting layer is positioned between the OLED anode electrode and the OLED cathode electrode, and wherein the mirror is positioned such that one of the OLED anode electrode and the OLED cathode electrode is between the mirror and the organic light emitting layer, and 
 wherein the mirror is reflective of a first visible light wavelength range, wherein at least a first portion of visible light emitted by the organic light emitting layer has a wavelength within the first visible light wavelength range, wherein the mirror is transmissive to a second visible light wavelength range, and wherein the organic light emitting layer does not emit light having wavelengths in at least a portion of the second visible light wavelength range. 
 
 
     
     
       5. The apparatus according to  claim 4 , wherein the PV cell is integrated onto the at least one optically clear plastic film. 
     
     
       6. The apparatus according to  claim 4 , wherein the OLED is integrated onto the at least one optically clear plastic film. 
     
     
       7. The apparatus according to  claim 4 , wherein the PV cell is integrated onto the at least one glass substrate. 
     
     
       8. The apparatus according to  claim 4 , wherein the OLED is integrated onto the at least one glass substrate. 
     
     
       9. The apparatus according to  claim 1 , wherein the visible light emitted by the organic light emitting layer has wavelengths within the first visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in the second visible wavelength range. 
     
     
       10. An apparatus, comprising:
 an organic light-emitting device (OLED); and 
 a photovoltaic (PV) cell, wherein the PV cell is sensitive to photons having one or more wavelengths, wherein the one or more wavelengths are in a PV cell wavelength range, and wherein at least one of the one or more wavelengths is greater than 0.70 μm, 
 wherein the OLED comprises:
 an organic light emitting layer; 
 a mirror; 
 an OLED anode electrode, wherein the OLED anode electrode is transparent to visible light; and 
 an OLED cathode electrode, wherein the OLED cathode electrode is transparent to visible light, 
 wherein the organic light emitting layer is positioned between the OLED anode electrode and the OLED cathode electrode, and wherein the mirror is positioned such that one of the OLED anode electrode and the OLED cathode electrode is between the mirror and the organic light emitting layer, 
 wherein the mirror is reflective of a first visible light wavelength range, wherein at least a first portion of visible light emitted by the organic light emitting layer has a wavelength within the first visible light wavelength range, wherein the mirror is transmissive to a second visible light wavelength range, and wherein the organic light emitting layer does not emit light having wavelengths in at least a portion of the second visible light wavelength range, and 
 wherein the mirror comprises a dielectric stack mirror. 
 
 
     
     
       11. The apparatus according to  claim 10 , wherein the dielectric stack mirror comprises a Ta 2 O 5  layer and an SiO 2  layer. 
     
     
       12. The apparatus according to  claim 11 , wherein the dielectric stack mirror comprises alternating layers of Ta 2 O 5  and SiO 2 , wherein each Ta 2 O 5  layer has a thickness of from about 10 nm to about 100 nm, and wherein each SiO 2  layer has a thickness of from about 10 nm to about 100 nm. 
     
     
       13. The apparatus according to  claim 12 , wherein the dielectric stack mirror comprises N layers of Ta 2 O 5 , wherein the number of layers of SiO 2 , is a range of from N−1 to N+1, and wherein N is in a range of from 1 to 40. 
     
     
       14. The apparatus according to  claim 1 , wherein the OLED further comprises a hole transporting layer and an electron transporting layer. 
     
     
       15. The apparatus according to  claim 1 , wherein the organic light-emitting layer comprises Ir(ppy)3, MEH-PPV, Alq3, or Flrpic. 
     
     
       16. The apparatus according to  claim 14 , wherein the hole transporting layer comprises NPB, TAPC, TFB, or TPD. 
     
     
       17. The apparatus according to  claim 14 , wherein the electron transporting layer comprises BCP, Bphen, 3TPYMB, or Alq3. 
     
     
       18. The apparatus according to  claim 1 , wherein the OLED anode electrode comprises at least one material selected from the group consisting of: indium tin oxide (ITO), carbon nanotubes (CNTs), indium zinc oxide (IZO), a silver nanowire, and a magnesium:silver/Alq3 (Mg:Ag/Alq3) stack layer, and wherein the OLED cathode electrode comprises at least one material selected from the group consisting of: ITO, CNTs, IZO, a silver nanowire, and a Mg:Ag/Alq3 stack layer. 
     
     
       19. The apparatus according to  claim 18 , wherein the OLED cathode electrode comprises a Mg:Ag/Alq3 stack layer, wherein the Mg:Ag layer has a thickness of less than 30 nm, and wherein Mg and Ag are present in a ratio of 10:1 (Mg:Ag), and wherein the Alq3 layer has a thickness of from 0 nm to 200 nm. 
     
     
       20. The apparatus according to  claim 1 , wherein the OLED anode electrode is positioned between the mirror and the organic light emitting layer. 
     
     
       21. An apparatus, comprising:
 an organic light-emitting device (OLED); and 
 a photovoltaic (PV) cell, wherein the PV cell is sensitive to photons having one or more wavelengths, wherein the one or more wavelengths are in a PV cell wavelength range, and wherein at least one of the one or more wavelengths is greater than 0.70 μm, 
 wherein the OLED comprises:
 an organic light emitting layer; 
 a mirror; 
 an OLED anode electrode, wherein the OLED anode electrode is transparent to visible light; and 
 an OLED cathode electrode, wherein the OLED cathode electrode is transparent to visible light, 
 wherein the organic light emitting layer is positioned between the OLED anode electrode and the OLED cathode electrode, and wherein the mirror is positioned such that one of the OLED anode electrode and the OLED cathode electrode is between the mirror and the organic light emitting layer, and 
 wherein the mirror is reflective of a first visible light wavelength range, wherein at least a first portion of visible light emitted by the organic light emitting layer has a wavelength within the first visible light wavelength range, wherein the mirror is transmissive to a second visible light wavelength range, and wherein the organic light emitting layer does not emit light having wavelengths in at least a portion of the second visible light wavelength range, and 
 wherein the OLED cathode electrode is positioned between the mirror and the organic light emitting layer. 
 
 
     
     
       22. The apparatus according to  claim 1 , wherein the OLED further comprises:
 a glass substrate; 
 a hole transporting layer on the OLED anode electrode; 
 wherein the mirror comprises a dielectric stack mirror, wherein the dielectric stack mirror is positioned on the glass substrate, wherein the dielectric stack mirror comprises alternating layers of Ta 2 O 5  and SiO 2 ; 
 wherein the OLED anode electrode is positioned on the dielectric stack mirror, wherein the OLED anode electrode comprises ITO; 
 wherein the organic light-emitting layer is positioned on the hole transporting layer; and 
 wherein the OLED cathode electrode is positioned on the organic light-emitting layer, 
 wherein the OLED cathode electrode comprises a Mg:Ag/Alq3 stack layer, wherein the Mg:Ag layer has a thickness of less than 30 nm, and wherein Mg and Ag are present in a ratio of 10:1 (Mg:Ag), and wherein the Alq3 layer has a thickness of from 0 nm to 200 nm. 
 
     
     
       23. An apparatus, comprising:
 an organic light-emitting device (OLED); and 
 a photovoltaic (PV) cell, wherein the PV cell is sensitive to photons having one or more wavelengths, wherein the one or more wavelengths are in a PV cell wavelength range, and wherein at least one of the one or more wavelengths is greater than 0.70 μm, 
 wherein the OLED comprises:
 an organic light emitting layer; 
 a mirror; 
 an OLED anode electrode, wherein the OLED anode electrode is transparent to visible light; and 
 an OLED cathode electrode, wherein the OLED cathode electrode is transparent to visible light, 
 wherein the organic light emitting layer is positioned between the OLED anode electrode and the OLED cathode electrode, and wherein the mirror is positioned such that one of the OLED anode electrode and the OLED cathode electrode is between the mirror and the organic light emitting layer, and 
 wherein the mirror is reflective of a first visible light wavelength range, wherein at least a first portion of visible light emitted by the organic light emitting layer has a wavelength within the first visible light wavelength range, wherein the mirror is transmissive to a second visible light wavelength range, and wherein the organic light emitting layer does not emit light having wavelengths in at least a portion of the second visible light wavelength range, and 
 wherein the PV cell comprises an infrared sensitizing material layer comprising quantum dots. 
 
 
     
     
       24. The apparatus according to  claim 23 , wherein the quantum dots are PbS quantum dots or PbSe quantum dots. 
     
     
       25. The apparatus according to  claim 1 , wherein the PV cell is sensitive to photons having a wavelength of from 700 nm to about 2000 nm. 
     
     
       26. The apparatus according to  claim 25 , wherein the PV cell is not sensitive to photons having a wavelength of less than 700 nm. 
     
     
       27. The apparatus according to  claim 1 , wherein the PV cell comprises a PV cell anode electrode and a PV cell cathode electrode. 
     
     
       28. The apparatus according to  claim 27 , wherein the PV cell anode electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), carbon nanotubes (CNTs), indium zinc oxide (IZO), a silver nanowire, and a magnesium:silver/Alq3 stack layer, and wherein the PV cell cathode electrode comprises at least one material selected from the group consisting of ITO, CNTs, IZO, a silver nanowire, and a magnesium:silver/Alq3 stack layer. 
     
     
       29. The apparatus according to  claim 28 , wherein at least one of the PV cell anode electrode or the PV cell cathode electrode comprises a magnesium:silver/Alq3 stack layer, and wherein a magnesium:silver layer of the magnesium:silver/Alq3 stack layer has a thickness of less than 30 nm, and wherein the magnesium:silver layer has a composition ratio of 10:1 (magnesium:silver). 
     
     
       30. The apparatus according to  claim 28 , wherein at least one of the PV cell anode electrode or the PV cell cathode electrode comprises a magnesium:silver/Alq3 stack layer, and wherein an Alq3 layer of the magnesium:silver/Alq3 stack layer has a thickness of from 0 nm to about 200 nm. 
     
     
       31. The apparatus according to  claim 27 , wherein the PV cell anode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light, and wherein the PV cell cathode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light. 
     
     
       32. The apparatus according to  claim 1 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 1 μm. 
     
     
       33. The apparatus according to  claim 32 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range of from 0.70 μm to 1 μm. 
     
     
       34. The apparatus according to  claim 32 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.70 μm. 
     
     
       35. The apparatus according to  claim 1 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 0.85 μm. 
     
     
       36. The apparatus according to  claim 35 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range of from 0.70 μm to 0.85 μm. 
     
     
       37. The apparatus according to  claim 35 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.85 μm. 
     
     
       38. The apparatus according to  claim 4 , wherein the mirror comprises a dielectric stack mirror. 
     
     
       39. The apparatus according to  claim 4 , wherein the OLED cathode electrode is positioned between the mirror and the organic light emitting layer. 
     
     
       40. The apparatus according to  claim 4 , wherein the OLED anode electrode is positioned between the mirror and the organic light emitting layer. 
     
     
       41. The apparatus according to  claim 4 , wherein the PV cell comprises an infrared sensitizing material layer comprising quantum dots. 
     
     
       42. The apparatus according to  claim 41 , wherein the quantum dots are PbS quantum dots or PbSe quantum dots. 
     
     
       43. The apparatus according to  claim 4 , wherein the apparatus is configured such that at least a portion of light incident on an input surface of the PV cell that passes through the PV cell and exits an output surface of the PV cell is incident on an input surface of the OLED and passes through the OLED. 
     
     
       44. The apparatus according to  claim 4 , wherein the visible light emitted by the organic light emitting layer has wavelengths within the first visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in the second visible wavelength range. 
     
     
       45. The apparatus according to  claim 4 , wherein the OLED further comprises a hole transporting layer and an electron transporting layer. 
     
     
       46. The apparatus according to  claim 4 , wherein the PV cell is sensitive to photons having a wavelength in the range of about 700 nm to about 2000 nm. 
     
     
       47. The apparatus according to  claim 46 , wherein the PV cell is not sensitive to photons having a wavelength of less than 700 nm. 
     
     
       48. The apparatus according to  claim 4 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 1 μm. 
     
     
       49. The apparatus according to  claim 48 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 1 μm. 
     
     
       50. The apparatus according to  claim 48 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.70 μm. 
     
     
       51. The apparatus according to  claim 4 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 0.85 μm. 
     
     
       52. The apparatus according to  claim 51 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 0.85 μm. 
     
     
       53. The apparatus according to  claim 51 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.85 μm. 
     
     
       54. The apparatus according to  claim 4 , wherein the PV cell comprises a PV cell anode electrode and a PV cell cathode electrode. 
     
     
       55. The apparatus according to  claim 54 , wherein the PV cell anode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light, and wherein the PV cell cathode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light. 
     
     
       56. The apparatus according to  claim 10 , wherein the OLED cathode electrode is positioned between the mirror and the organic light emitting layer. 
     
     
       57. The apparatus according to  claim 10 , wherein the OLED anode electrode is positioned between the mirror and the organic light emitting layer. 
     
     
       58. The apparatus according to  claim 10 , wherein the PV cell comprises an infrared sensitizing material layer comprising quantum dots. 
     
     
       59. The apparatus according to  claim 58 , wherein the quantum dots are PbS quantum dots or PbSe quantum dots. 
     
     
       60. The apparatus according to  claim 10 , wherein the apparatus is configured such that at least a portion of light incident on an input surface of the PV cell that passes through the PV cell and exits an output surface of the PV cell is incident on an input surface of the OLED and passes through the OLED. 
     
     
       61. The apparatus according to  claim 10 , wherein the PV cell is directly on the OLED such that the PV cell is in direct contact with the OLED. 
     
     
       62. The apparatus according to  claim 10 , wherein the visible light emitted by the organic light emitting layer has wavelengths within the first visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in the second visible wavelength range. 
     
     
       63. The apparatus according to  claim 10 , wherein the OLED further comprises a hole transporting layer and an electron transporting layer. 
     
     
       64. The apparatus according to  claim 10 , wherein the PV cell is sensitive to photons having a wavelength in the range of about 700 nm to about 2000 nm. 
     
     
       65. The apparatus according to  claim 64 , wherein the PV cell is not sensitive to photons having a wavelength of less than 700 nm. 
     
     
       66. The apparatus according to  claim 10 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 1 μm. 
     
     
       67. The apparatus according to  claim 66 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 1 μm. 
     
     
       68. The apparatus according to  claim 66 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.70 μm. 
     
     
       69. The apparatus according to  claim 10 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 0.85 μm. 
     
     
       70. The apparatus according to  claim 69 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 0.85 μm. 
     
     
       71. The apparatus according to  claim 69 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.85 μm. 
     
     
       72. The apparatus according to  claim 10 , wherein the PV cell comprises a PV cell anode electrode and a PV cell cathode electrode. 
     
     
       73. The apparatus according to  claim 72 , wherein the PV cell anode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light, and wherein the PV cell cathode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light. 
     
     
       74. The apparatus according to  claim 21 , wherein the PV cell comprises an infrared sensitizing material layer comprising quantum dots. 
     
     
       75. The apparatus according to  claim 74 , wherein the quantum dots are PbS quantum dots or PbSe quantum dots. 
     
     
       76. The apparatus according to  claim 21 , wherein the apparatus is configured such that at least a portion of light incident on an input surface of the PV cell that passes through the PV cell and exits an output surface of the PV cell is incident on an input surface of the OLED and passes through the OLED. 
     
     
       77. The apparatus according to  claim 21 , wherein the PV cell is directly on the OLED such that the PV cell is in direct contact with the OLED. 
     
     
       78. The apparatus according to  claim 21 , wherein the visible light emitted by the organic light emitting layer has wavelengths within the first visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in the second visible wavelength range. 
     
     
       79. The apparatus according to  claim 21 , wherein the OLED further comprises a hole transporting layer and an electron transporting layer. 
     
     
       80. The apparatus according to  claim 21 , wherein the PV cell is sensitive to photons having a wavelength in the range of about 700 nm to about 2000 nm. 
     
     
       81. The apparatus according to  claim 80 , wherein the PV cell is not sensitive to photons having a wavelength of less than 700 nm. 
     
     
       82. The apparatus according to  claim 21 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 1 μm. 
     
     
       83. The apparatus according to  claim 82 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 1 μm. 
     
     
       84. The apparatus according to  claim 82 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.70 μm. 
     
     
       85. The apparatus according to  claim 21 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 0.85 μm. 
     
     
       86. The apparatus according to  claim 85 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 0.85 μm. 
     
     
       87. The apparatus according to  claim 85 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.85 μm. 
     
     
       88. The apparatus according to  claim 21 , wherein the PV cell comprises a PV cell anode electrode and a PV cell cathode electrode. 
     
     
       89. The apparatus according to  claim 88 , wherein the PV cell anode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light, and wherein the PV cell cathode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light. 
     
     
       90. The apparatus according to  claim 23 , wherein the apparatus is configured such that at least a portion of light incident on an input surface of the PV cell that passes through the PV cell and exits an output surface of the PV cell is incident on an input surface of the OLED and passes through the OLED. 
     
     
       91. The apparatus according to  claim 23 , wherein the PV cell is directly on the OLED such that the PV cell is in direct contact with the OLED. 
     
     
       92. The apparatus according to  claim 23 , wherein the visible light emitted by the organic light emitting layer has wavelengths within the first visible light wavelength range, wherein the organic light emitting layer does not emit light having wavelengths in the second visible wavelength range. 
     
     
       93. The apparatus according to  claim 23 , wherein the OLED further comprises a hole transporting layer and an electron transporting layer. 
     
     
       94. The apparatus according to  claim 23 , wherein the PV cell is sensitive to photons having a wavelength in the range of about 700 nm to about 2000 nm. 
     
     
       95. The apparatus according to  claim 94 , wherein the PV cell is not sensitive to photons having a wavelength of less than 700 nm. 
     
     
       96. The apparatus according to  claim 23 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 1 μm. 
     
     
       97. The apparatus according to  claim 96 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 1 μm. 
     
     
       98. The apparatus according to  claim 96 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.70 μm. 
     
     
       99. The apparatus according to  claim 23 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is greater than 0.85 μm. 
     
     
       100. The apparatus according to  claim 99 , wherein at least one of the one or more wavelengths to which the PV cell is sensitive is in a range from 0.70 μm to 0.85 μm. 
     
     
       101. The apparatus according to  claim 99 , wherein the PV cell is not sensitive to photons having a wavelength of less than 0.85 μm. 
     
     
       102. The apparatus according to  claim 23 , wherein the PV cell comprises a PV cell anode electrode and a PV cell cathode electrode. 
     
     
       103. The apparatus according to  claim 102 , wherein the PV cell anode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light, and wherein the PV cell cathode electrode is transparent to at least a portion of visible light and to at least a portion of infrared light.

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