Method of manufacturing light-emitting diode package

Abstract

A method of manufacturing a light-emitting diode package is illustrated. A light-emitting diode chip is manufactured. A material layer is formed on side surfaces and a rear surface of the light-emitting diode chip. The material layer is then oxidized to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip. The light-emitting diode chip is packaged.

What is claimed is: 
     
       1. A method of manufacturing a light-emitting diode package, the method comprising:
 dicing a wafer to obtain a light-emitting diode chip including side surfaces, a light-emitting surface, and a rear surface opposed to the light-emitting surface of the light-emitting diode chip; 
 mounting the light-emitting diode chip on a carrier substrate, such that the light-emitting surface of the light-emitting diode chip is facing toward the carrier substrate; 
 after mounting the light-emitting diode chip on the carrier substrate, forming a material layer on the side surfaces and the rear surface of the light-emitting diode chip; 
 oxidizing the material layer to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip; and 
 packaging the light-emitting diode chip. 
 
     
     
       2. The method of  claim 1 , wherein the light-emitting diode chip is manufactured by forming a light-emitting structure on a supporting layer, and
 wherein the reflective layer is formed on side surfaces and a rear surface of the supporting layer and side surfaces of the light-emitting structure. 
 
     
     
       3. The method of  claim 2 , wherein the reflective layer is formed in a continuous layer along the rear surface of the supporting layer, the side surfaces of the supporting layer and the side surfaces of the light-emitting structure. 
     
     
       4. The method of  claim 2 , wherein the supporting layer is a substrate for epitaxial growth, a metal layer or a conductive material layer. 
     
     
       5. The method of  claim 1 , further comprising removing the carrier substrate after forming the reflective layer. 
     
     
       6. The method of  claim 5 , further comprising performing heat treatment on the reflective layer, after the forming of the reflective layer. 
     
     
       7. The method of  claim 1 , wherein the packaging of the light-emitting diode chip comprises:
 forming a phosphor layer on the light-emitting surface of the light-emitting diode chip; 
 mounting the light-emitting diode chip on a wiring substrate, such that the phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip, which has the phosphor layer formed thereon, and the wiring substrate by using an electrical connecting member; and 
 forming a molding material for molding around the light-emitting diode chip to cover side surfaces of the phosphor layer while exposing the light-emitting surface of the light-emitting diode chip. 
 
     
     
       8. The method of  claim 1 , wherein the packaging of the light-emitting diode chip comprises:
 mounting the light-emitting diode chip on a wiring substrate such that a phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip and the wiring substrate by using an electrical connecting member; 
 forming a molding material for molding around the light-emitting diode chip to cover side surfaces of the phosphor layer while exposing the light-emitting surface of the light-emitting diode chip; and 
 forming a phosphor layer on the light-emitting surface and both sides of the molding material. 
 
     
     
       9. The method of  claim 1 , wherein the packaging of the light-emitting diode chip comprises:
 mounting the light-emitting diode chip on a wiring substrate such that a phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip and the wiring substrate by using an electrical connecting member; 
 forming a phosphor layer on the light-emitting surface and the reflective layer; and 
 forming a molding material for molding around the light-emitting diode chip to cover side surfaces of the phosphor layer while exposing the light-emitting surface of the light-emitting diode chip. 
 
     
     
       10. The method of  claim 1 , wherein the material layer includes a metal layer or a silicon layer. 
     
     
       11. The method of  claim 1 , wherein the reflective layer is formed on the entire side and rear surfaces of the light-emitting diode chip. 
     
     
       12. A method of manufacturing a light-emitting diode package, the method comprising:
 dicing a wafer to obtain a light-emitting diode chip; 
 mounting the light-emitting diode chip on a carrier substrate; 
 after mounting the light-emitting diode chip on the carrier substrate, forming a metal layer on side surfaces and a rear surface of the light-emitting diode chip; 
 oxidizing the metal layer to convert the metal layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip; 
 preparing a wiring substrate including a mounting member, which has a surface on which the light-emitting diode chip is mounted, a flat surface member, which is a flat surface extending from both side surfaces of the mounting member, and a reflective cup, which extends upward from the flat surface member; 
 mounting the light-emitting diode chip, on which the reflective layer is formed, on the mounting member of the wiring substrate; and 
 packaging the light-emitting diode chip. 
 
     
     
       13. A method of  claim 12 , wherein the packaging of the light-emitting diode chip comprises:
 mounting the light-emitting diode chip on a wiring substrate such that a phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip and the wiring substrate by using an electrical connecting member; 
 forming a phosphor layer on a light-emitting surface of the light-emitting diode chip and the reflective layer; and 
 forming a molding material for molding around the light-emitting diode chip. 
 
     
     
       14. The method of  claim 12 , wherein the packaging of the light-emitting diode chip comprises:
 mounting the light-emitting diode chip on a wiring substrate such that a phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip and the wiring substrate by using an electrical connecting member; and 
 forming a phosphor layer on a light-emitting surface of the light-emitting diode chip and the reflective layer. 
 
     
     
       15. The method of  claim 12 , further comprising forming a second reflective layer on the flat surface member of the wiring substrate. 
     
     
       16. The method of  claim 12 , wherein:
 the light-emitting diode chip is manufactured by forming a light-emitting structure on a supporting layer, and 
 the reflective layer is formed in a continuous layer along rear surface of the supporting layer, side surfaces of the supporting layer, and side surfaces of the light-emitting structure. 
 
     
     
       17. The method of  claim 12 , wherein the reflective layer is formed on the entire side and rear surfaces of the light-emitting diode chip. 
     
     
       18. A method of manufacturing a light-emitting diode package, the method comprising:
 dicing a wafer to obtain a light-emitting diode chip including side surfaces, a light-emitting surface, and a rear surface opposed to the light-emitting surface of the light-emitting diode chip; 
 mounting the light-emitting diode chip on a carrier substrate, such that the light-emitting surface of the light-emitting diode chip is facing toward the carrier substrate and the rear surface of the light-emitting diode chip is facing away from the carrier substrate; 
 after mounting the light-emitting diode chip on the carrier substrate, forming a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip; 
 preparing a wiring substrate, wherein:
 the wiring substrate includes a mounting member, a flat surface member, and a reflective cup; 
 the flat surface member extends to side surfaces of the mounting member; and 
 the reflective cup extends upward from the flat surface member; 
 
 mounting the light-emitting diode chip with the reflective layer on the mounting member of the wiring substrate; and 
 packaging the light-emitting diode chip. 
 
     
     
       19. The method of  claim 18 , further comprising removing the carrier substrate after forming the reflective layer. 
     
     
       20. The method of  claim 18 , further comprising:
 performing heat treatment on the reflective layer, after the forming of the reflective layer. 
 
     
     
       21. The method of  claim 18 , wherein the packaging of the light-emitting diode chip comprises:
 mounting the light-emitting diode chip on the wiring substrate such that a phosphor layer of the light-emitting diode chip is facing upward; 
 electrically connecting the light-emitting diode chip and the wiring substrate by using one or more electrical connecting members; and 
 forming a phosphor layer on a light-emitting surface of the light-emitting diode chip and the reflective layer. 
 
     
     
       22. The method of  claim 21 , further comprising:
 forming a molding material for molding around the light-emitting diode chip to cover side surfaces of the phosphor layer while exposing the light-emitting surface of the light-emitting diode chip. 
 
     
     
       23. The method of  claim 18 , wherein the reflective layer is formed on the entire side and rear surfaces of the light-emitting diode chip.