Formed article, method of producing same, electronic device member, and electronic device

Abstract

A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A 1 ) and a partial area (A 2 ), the (A 1 ) having a specific oxygen, carbon and silicon content, and the (A 2 ) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

The invention claimed is: 
     
       1. A method of producing a formed article having a gas barrier layer, the method comprising:
 implanting ions into a polysilane compound-containing layer containing 50 wt % or more of a polysilane compound of a formed article by a plasma ion implantation method to form the formed article having the gas barrier layer wherein said gas barrier layer is formed by said plasma ion implantation, 
 wherein the formed article prior to said plasma ion implantation includes the polysilane compound-containing layer in its surface, 
 wherein the gas barrier layer includes an area (A) where an oxygen atom content rate gradually decreases, and where a carbon atom content rate gradually increases in a depth direction from a surface,
 wherein the area (A) includes a partial area (A 1 ) and a partial area (A 2 ), the partial area (A 1 ) having an oxygen content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20% based on the total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A 2 ) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87% and a silicon atom content rate of 7 to 18% based on the total content rate of oxygen atoms, carbon atoms and silicon atoms, and 
 
 wherein the ions are obtained by ionizing at least one as selected from the group consisting of hydrogen, nitrogen, argon, helium, neon, xenon, krypton, a silicon compound, and a hydrocarbon. 
 
     
     
       2. The method according to  claim 1 , wherein the formed article having the gas barrier layer has a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 0.35 g/m 2 /day or less. 
     
     
       3. The method according to  claim 1 , wherein the polysilane compound is a compound having a repeating unit shown by a formula (1): 
       
         
           
           
               
               
           
         
         wherein R 1  and R 2  individually represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, an aryl group, a hydroxyl group, an alkoxy group, a cycloalkyloxy group, an aryloxy group, an aralkyloxy group, a substituted or unsubstituted amino group, a sill group, or a halogen atom, wherein R 1  and R 2  are the same or different from each other; and 
         wherein the weight average molecular weight of the polysilane compound is 300 to 100,000. 
       
     
     
       4. The method according to  claim 1 , wherein the step of implanting ions by the plasma ion implantation method is a process of forming the ion implanted layer by implanting ions in plasma into the polysilane compound-containing layer containing 50 wt % or more of the polysilane compound by applying a negative high-voltage pulse to the formed article having the layer containing 50 wt % or more of the polysilane compound that is exposed in plasma. 
     
     
       5. The method according to  claim 4 , wherein a voltage applied when applying the negative high voltage pulse is −1 kV to −50 kV. 
     
     
       6. The method according to  claim 1 , wherein the step of implanting ions by the plasma ion implantation method is a process comprising implanting ions into the polysilane compound-containing layer of the formed article while feeding the formed article in a given direction.