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US9403154B2ActiveUtilityPatentIndex 39

Catalysts and methods of use

Assignee: MACFARLANE DOUGLASPriority: Mar 22, 2011Filed: Mar 22, 2012Granted: Aug 2, 2016
Est. expiryMar 22, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:MACFARLANE DOUGLASWINTHER-JENSEN BJORNIZGORODIN ALEXEY
H10P 14/3436H10P 14/3434C25B 1/04C25B 11/0478C25B 1/003H01L 21/02568C25B 3/04Y02E60/366C25B 1/00B01J 27/187H01L 21/02565C25D 9/08C25D 3/665C25B 1/55C25B 11/091C25B 3/25Y02E60/36
39
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Claims

Abstract

The present invention relates to a catalyst comprising (i) a semiconductor preferably comprising one or more metal-(Group VIb) semiconductors, and (ii) a semiconductor material having elevated phosphorous content preferably comprising one or more metal-(Group VIb))-phosphorous species.

Claims

exact text as granted — not AI-modified
The claims defining the invention are as follows: 
     
       1. A method of preparing a semiconductor or a semiconductor material of a catalyst, the catalyst comprising:
 the semiconductor, and 
 the semiconductor material having the formula M′ m′ A′ a′ P y  wherein: 
 M′ is a metal, 
 A′ is a Group VIb species, 
 m′ has a value of between 1 and 5, 
 a′ has a value of between 1 and 5, 
 P is a phosphorous species, and 
 y has a value 0<y<5; 
 the method comprising the steps of:
 preparing an aqueous solution comprising at least one principal electrolyte and at least one supporting electrolyte, 
 applying a source of energy to the aqueous solution, and 
 depositing the principal electrolyte, and optionally the supporting electrolyte at a cathode using electrolysis. 
 
 
     
     
       2. The method according to  claim 1  wherein the supporting electrolyte is chosen from the group comprising primary, secondary, tertiary or quaternary nitrogen or phosphorous species or combinations thereof. 
     
     
       3. The semiconductor comprised in the catalyst prepared by the method of  claim 1 . 
     
     
       4. The semiconductor material having phosphorous content comprised in the catalyst prepared by the method of  claim 1 . 
     
     
       5. The method according to  claim 1  wherein M′ is chosen from the group comprising Ti, Mo, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ir, Cd, In, Sn, the rare-earth metals, alone or in combination. 
     
     
       6. The method according to  claim 1  wherein A′ is chosen from the group comprising oxygen, sulphur, selenium and tellurium. 
     
     
       7. A method of preparing a catalyst comprising a semiconductor and a semiconductor material having the formula M′ m ′ A′ a′ P y  wherein:
 M′ is a metal, 
 A′ is a Group VIb species, 
 m′ has a value of between 1 and 5, 
 a′ has a value of between 1 and 5, 
 P is a phosphorous species, and 
 y has a value 0<y<5 
 
       the method comprising preparation of the catalyst or the semiconductor or semiconductor material using the steps of:
 preparing an ionic liquid comprising at least one electrolyte, 
 applying a source of energy to elevate the temperature of the ionic liquid to at least 130° C., and 
 depositing the at least one electrolyte at a cathode using electrolysis. 
 
     
     
       8. An electrodeposition process comprising the steps of:
 preparing an ionic liquid comprising at least one electrolyte, 
 applying a source of energy to elevate the temperature of the ionic liquid to at least 130° C., and 
 depositing the at least one electrolyte at a cathode using electrolysis. 
 
     
     
       9. A process for splitting water into hydrogen and oxygen, the process including the step of suspending a photo-electro catalyst in water, the photo-electro catalyst comprising:
 a semiconductor, and 
 a semiconductor material having the formula M′ m′ A′ a′ P y  wherein: 
 M′ is a metal, 
 A′ is a Group VIb species, 
 m′ has a value of between 1 and 5, 
 a′ has a value of between 1 and 5, 
 P is a phosphorous species, and 
 y has a value 0<y <5.

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