Nanogenerator comprising boron nitride atomic layer

Abstract

A nanogenerator and a method of manufacturing the same are provided. The nanogenerator includes a boron nitride atomic layer, and a first electrode and a second electrode disposed on the boron nitride atomic layer.

What is claimed is: 
     
       1. A nanogenerator comprising:
 a boron nitride atomic layer; 
 a first electrode disposed on the boron nitride atomic layer; and 
 a second electrode disposed on the boron nitride atomic layer, the second electrode spaced apart from the first electrode. 
 
     
     
       2. The nanogenerator of  claim 1 , wherein the boron nitride atomic layer is a hexagonal boron nitride atomic layer. 
     
     
       3. The nanogenerator of  claim 1 , further comprising a flexible substrate, the boron nitride atomic layer disposed on the flexible substrate. 
     
     
       4. A nanogenerator comprising:
 a first electrode; 
 a boron nitride atomic layer disposed on the first electrode; and 
 a second electrode disposed on the boron nitride atomic layer. 
 
     
     
       5. The nanogenerator of  claim 4 , wherein the boron nitride atomic layer is a hexagonal boron nitride atomic layer. 
     
     
       6. The nanogenerator of  claim 4 , further comprising a substrate, the substrate being disposed on one side of the first electrode and the boron nitride atomic layer being disposed on another side of the first electrode.