US9431156B2ActiveUtilityA1

Extremely low resistance materials and methods for modifying or creating same

74
Assignee: AMBATURE INCPriority: Oct 2, 2009Filed: Feb 28, 2014Granted: Aug 30, 2016
Est. expiryOct 2, 2029(~3.2 yrs left)· nominal 20-yr term from priority
Inventors:Douglas J. Gilbert
H10D 48/30H01L 39/2464H01L 39/125H01L 39/2487H01L 39/2419H01L 39/12B05D 1/36H01B 12/06Y10T428/31678H01C 7/00H01L 39/24H01B 12/14H01B 1/08H01L 39/126H10N 60/858B05D 5/12H10N 60/855H01B 12/00H10N 60/0268H10N 60/01H10N 60/857H10N 60/0856H10N 60/85H10N 60/0661
74
PatentIndex Score
2
Cited by
3
References
14
Claims

Abstract

In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method comprising:
 layering a modifying material with an ELR material to form a modified ELR material, the ELR material having a crystalline structure with at least one aperture formed therein, wherein the at least one aperture facilitates propagation of electrical charge in an ELR state through the crystalline structure and in a direction parallel to an a-axis of the crystalline structure, and wherein the modified ELR material has an aperture that is maintained at temperatures greater than the at least one aperture of the ELR material. 
 
     
     
       2. The method of  claim 1 , wherein the modifying material is layered onto the ELR material. 
     
     
       3. The method of  claim 2 , wherein the modifying material is deposited onto the ELR material. 
     
     
       4. The method of  claim 1 , wherein the ELR material is layered onto the modifying material. 
     
     
       5. The method of  claim 4 , wherein the ELR material is deposited onto the modifying material. 
     
     
       6. The method of  claim 2 , wherein the ELR material is bonded to the modifying material. 
     
     
       7. The method of  claim 4 , wherein the ELR material is bonded to the modifying material. 
     
     
       8. The method of  claim 2 , wherein atoms on a face of the ELR material are bonded to atoms of the modifying material. 
     
     
       9. The method of  claim 4 , wherein atoms on a face of the ELR material are bonded to atoms of the modifying material. 
     
     
       10. The method of  claim 1 , wherein the at least one aperture and the aperture each have a cross-section ranging in size from 0.200 nm to 1.000 nm. 
     
     
       11. The method of  claim 1 , wherein the ELR material is a superconducting material. 
     
     
       12. The method of  claim 11 , wherein the ELR material is a mixed-valence copper-oxide perovskite material. 
     
     
       13. The method of  claim 11 , wherein the ELR material is an iron pnictide material. 
     
     
       14. The method of  claim 11 , wherein the ELR material is magnesium diboride.

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