Manufacturing method of pixel structure with data line, scan line and gate electrode formed on the same layer

Abstract

A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.

What is claimed is: 
     
       1. A method of manufacturing a pixel structure, comprising:
 forming a patterned first conductive layer on a substrate to form a scan line, a gate electrode and a linear transmitting part, the gate electrode connected to the scan line, and the linear transmitting part and the scan line separated from each other, wherein an extending direction of the scan line is crossed to an extending direction of the linear transmitting part; 
 forming a first insulating layer on the substrate to cover the scan line, the gate electrode and the linear transmitting part; 
 forming an oxide channel on the first insulating layer above the gate electrode; 
 forming a second insulating layer on the first insulating layer and the oxide channel, wherein the second insulating layer comprises an etching blocking pattern located on the oxide channel and the gate electrode, and an isolation pattern located on the linear transmitting part, wherein the etching blocking pattern is located within a boundary of the gate electrode and not in direct contact with the first insulating layer, the isolation pattern contacts the first insulating layer, and the etching blocking pattern and the isolation pattern of the second insulating layer are not continuous and do not directly contact each other; 
 forming a patterned second conductive layer on the second insulating layer to form a source electrode, a drain electrode, a cross-line transmitting part and a common electrode, the source electrode and the drain electrode located at two sides of the oxide channel, the cross-line transmitting part crossing over the scan line, and the common electrode disposed on the isolation pattern above the linear transmitting part; and 
 forming a first pixel electrode on the substrate to be connected to the drain electrode. 
 
     
     
       2. The method of manufacturing a pixel structure according to  claim 1 , further comprising forming a first opening and a second opening on the first insulating layer and the second insulating layer respectively to constitute a contact opening exposing the linear transmitting part, and the cross-line transmitting part connected to the linear transmitting part via the contact opening. 
     
     
       3. The method of manufacturing a pixel structure according to  claim 2 , wherein the first opening and the second opening are formed by using a same photo mask process. 
     
     
       4. The method of manufacturing a pixel structure according to  claim 2 , further comprising forming two openings on the second insulating layer to expose the oxide channel, in which the source electrode and the drain electrode are connected to the oxide channel via the two openings, wherein the second opening and the two openings exposing the oxide channel are manufactured by using a same photo mask process. 
     
     
       5. The method of manufacturing a pixel structure according to  claim 2 , further comprising forming a third insulating layer to cover the source electrode, the drain electrode and the common electrode. 
     
     
       6. The method of manufacturing a pixel structure according to  claim 5 , wherein the first pixel electrode is formed after the third insulating layer is formed and the step of forming the third insulating layer further comprises forming a third opening on the third insulating layer so that the first pixel electrode is electrically connected to the drain electrode via the third opening. 
     
     
       7. The method of manufacturing a pixel structure according to  claim 5 , further comprising forming a patterned second pixel electrode disposed on the third insulating layer and covering the common electrode, wherein the third insulating layer is located between the first pixel electrode and the second pixel electrode, and the second pixel electrode has a plurality of slits located on the first pixel electrode. 
     
     
       8. The method of manufacturing a pixel structure according to  claim 7 , further comprises forming a third opening on the third insulating layer so that the second pixel electrode is electrically connected to the common electrode via the third opening. 
     
     
       9. The method of manufacturing a pixel structure according to  claim 1 , wherein the step of forming the first pixel electrode further comprises forming an auxiliary electrode covering the common electrode.