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US9454041B2ActiveUtilityPatentIndex 48

Liquid crystal device, method for manufacturing liquid crystal device, and electronic apparatus

Assignee: SEIKO EPSON CORPPriority: Oct 9, 2013Filed: Sep 24, 2014Granted: Sep 27, 2016
Est. expiryOct 9, 2033(~7.3 yrs left)· nominal 20-yr term from priority
Inventors:MATSUMOTO YOSHIMICHITANIGUCHI YOSHIOKOMATSU NORIKAZU
G02F 1/133734C23C 14/225C23C 14/226
48
PatentIndex Score
1
Cited by
13
References
9
Claims

Abstract

A liquid crystal device includes a liquid crystal layer, and an inorganic oriented film between the liquid crystal layer and an electrode, in which the inorganic oriented film has a first inorganic oriented film that has a first prismatic structure including silicon oxide, and a second inorganic oriented film that is formed so as to cover at least a portion of the first prismatic structure, and includes nitrogen.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A liquid crystal device comprising:
 a liquid crystal layer; and 
 an inorganic oriented film between the liquid crystal layer and an electrode, 
 wherein the inorganic oriented film has 
 a first vapor deposited film that has a prismatic structure including silicon oxide, and 
 a second vapor deposited film that is formed so as to cover at least a portion of the prismatic structure, the second vapor deposited film comprising silicon nitride, and 
 wherein the first vapor deposited film is formed between the second vapor deposited film and the electrode. 
 
     
     
       2. The liquid crystal device according to  claim 1 ,
 wherein the first vapor deposited film is a vertical vapor deposited film, and 
 the second vapor deposited film is an oblique vapor deposited film. 
 
     
     
       3. The liquid crystal device according to  claim 1 ,
 wherein the first vapor deposited film and the second vapor deposited film are oblique vapor deposited films. 
 
     
     
       4. A method for manufacturing a liquid crystal device, comprising:
 forming an electrode on a base material; 
 forming a first vapor deposited film that has a prismatic structure including silicon oxide on the electrode and the base material; 
 forming a second vapor deposited film that includes nitrogen so as to cover at least a portion of the first vapor deposited film, the forming of the second vapor deposited film comprising vapor depositing silicon nitride on the first vapor deposited film; and 
 arranging a liquid crystal layer on the second vapor deposited film, 
 wherein the first vapor deposited film is formed between the second vapor deposited film and the electrode. 
 
     
     
       5. The method for manufacturing a liquid crystal device according to  claim 4 ,
 wherein the first vapor deposited film is formed by a vertical vapor deposition method, and 
 the second vapor deposited film is formed by an oblique vapor deposition method. 
 
     
     
       6. The method for manufacturing a liquid crystal device according to  claim 4 ,
 wherein the first vapor deposited film and the second vapor deposited film are formed by an oblique vapor deposition method. 
 
     
     
       7. An electronic apparatus comprising:
 the liquid crystal device according to  claim 1 . 
 
     
     
       8. An electronic apparatus comprising:
 the liquid crystal device according to  claim 2 . 
 
     
     
       9. An electronic apparatus comprising:
 the liquid crystal device according to  claim 3 .

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