US9461300B2ActiveUtilityA1

Power storage device

93
Assignee: SEMICONDUCTOR ENERGY LABPriority: Sep 30, 2011Filed: Sep 25, 2012Granted: Oct 4, 2016
Est. expirySep 30, 2031(~5.2 yrs left)· nominal 20-yr term from priority
H01M 4/134H01M 4/587H01M 4/625H01M 2004/027H01M 4/366H01M 10/0525H01M 2004/025H01M 50/469Y02E60/122H01M 2/1673H01M 2/18H01M 50/46Y02E60/10
93
PatentIndex Score
8
Cited by
104
References
10
Claims

Abstract

Provided are an electrode for a power storage device having much better charge/discharge characteristics and a power storage device using the electrode. A plurality of cavities is provided in a surface of an active material layer over a current collector. A graphene covering the active material layer facilitates rapid charge/discharge and prevents breakdown of the current collector caused by charge/discharge. With improved charge/discharge characteristics, an electrode for a power storage device which does not easily deteriorate and a power storage device using the electrode can be provided.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A power storage device comprising a negative electrode comprising:
 a current collector; 
 an active material layer over and in contact with an entire top surface of the current collector; and 
 a protective layer over and in contact with a vertex of the active material layer, 
 wherein an etching rate of the protective layer is lower than that of the active material layer, 
 wherein a plurality of cavities is formed in the active material layer and the protective layer, and 
 wherein the active material layer has a width greater than or equal to 0.1 μm and less than or equal to 1 μm. 
 
     
     
       2. The power storage device according to  claim 1 ,
 wherein the plurality of cavities is arranged at regular intervals. 
 
     
     
       3. The power storage device according to  claim 1 ,
 wherein the plurality of cavities is arranged in a matrix. 
 
     
     
       4. The power storage device according to  claim 1 , wherein the active material layer has a honeycomb structure. 
     
     
       5. The power storage device according to  claim 1 , wherein the active material layer has a truss structure. 
     
     
       6. A power storage device comprising a negative electrode comprising:
 a current collector; 
 an active material layer over and in contact with an entire top surface of the current collector; and 
 a protective layer over and in contact with a vertex of the active material layer, 
 wherein an etching rate of the protective layer is lower than that of the active material layer, 
 wherein a plurality of cavities is formed in the active material layer and the protective layer, and 
 wherein the active material layer has a width greater than or equal to 0.1 μm and less than or equal to 1 μm, and has a height greater than or equal to 0.5 μm and less than or equal to 100 μm. 
 
     
     
       7. The power storage device according to  claim 6 , wherein the plurality of cavities is arranged at regular intervals. 
     
     
       8. The power storage device according to  claim 6 , wherein the plurality of cavities is arranged in a matrix. 
     
     
       9. The power storage device according to  claim 6 , wherein each of the plurality of cavities has a hexagonal structure. 
     
     
       10. The power storage device according to  claim 6 , wherein each of the plurality of cavities has a triangular structure.

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