Thin film forming apparatus and thin film forming method

Abstract

A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

The invention claimed is: 
     
       1. A thin film forming apparatus, comprising:
 a substrate holding portion that holds a substrate; and 
 a target portion facing a substrate held by the substrate holding portion, wherein 
 the target portion includes a plurality of targets arranged at predetermined intervals and parallel to the substrate held by the substrate holding portion, 
 the substrate holding portion moves the substrate held by the substrate holding portion parallel to the target portion, 
 the thin film forming apparatus further includes a shield portion that blocks sputtered particles flying from the target portion, the shield portion is placed on the target portion side of the substrate held by the substrate holding portion, so as to face a gap between adjoining ones of the targets, 
 the thin film forming apparatus further includes a partition wall portion provided between the adjoining ones of the targets, 
 the partition wall portion blocks the sputtered particles flying from the targets, 
 the partition wall portion includes flange portions that extend from the partition wall portion and face a portion of the gap between the adjoining ones of the targets, and 
 the flange portions are provided above the targets such that lower surfaces of each of the flange portions are above uppermost surfaces of the targets, and the lower surfaces of each of the flange portions overlap ends of the gap between the adjoining ones of the targets. 
 
     
     
       2. The thin film forming apparatus of  claim 1 , wherein
 the substrate holding portion reciprocates along an entire width of a region facing one of the targets and at least a portion of the gap located on each of both right and left sides of the one of the targets, the entire width being equal to a sum of a total width of the one of the targets and a total width of the gap between the adjoining ones of the targets. 
 
     
     
       3. The thin film forming apparatus of  claim 1 , wherein the targets are made of a material containing IGZO. 
     
     
       4. A method of forming a thin film on a substrate by a thin film forming apparatus which includes a substrate holding portion that holds a substrate, and a target portion placed so as to face a substrate held by the substrate holding portion, and in which the target portion includes a plurality of targets arranged at predetermined intervals and parallel to the substrate held by the substrate holding portion, comprising:
 forming a thin film on the substrate by moving the substrate held by the substrate holding portion, parallel to the target portion, wherein a shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate held by the substrate holding portion, so as to face a gap between adjoining ones of the targets; 
 causing the substrate holding portion to reciprocate along an entire width of a region facing one of the targets and at least a portion of the gap located on each of both right and left sides of the one of the targets, the entire width being equal to a sum of a total width of the one of the targets and a total width of the gap between the adjoining ones of the targets; and 
 causing a magnet portion of the thin film forming apparatus on a back side of the target portion at a side of the target portion facing opposite the substrate to reciprocate along a back surface of the target portion; wherein 
 the magnet portion includes a plurality of magnets arranged at predetermined intervals in a direction in which the magnet portion reciprocates; and 
 each of the magnets is stationary at a central position of a corresponding one of the targets during a predetermined period from a start of the step of forming the thin film on the substrate. 
 
     
     
       5. The method of  claim 4 , wherein
 during the step of forming the thin film, a partition wall portion, which blocks the sputtered particles flying from the targets and which includes flange portions that extend from the partition wall portion and face a portion of the gap between the adjoining ones of the targets, is provided between the adjoining ones of the targets. 
 
     
     
       6. The method of  claim 4 , wherein the targets are made of a material containing IGZO. 
     
     
       7. A method of forming a thin film on a substrate by a thin film forming apparatus which includes a substrate holding portion that holds a substrate, and a target portion placed so as to face a substrate held by the substrate holding portion, and in which the target portion includes a plurality of targets arranged at predetermined intervals and parallel to the substrate held by the substrate holding portion, comprising:
 forming a thin film on the substrate by moving the substrate held by the substrate holding portion, parallel to the target portion, wherein a shield portion that blocks sputtered particles flying from the target portion is placed on a target portion side of the substrate held by the substrate holding portion, so as to face a gap between adjoining ones of the targets; wherein 
 during the step of forming the thin film, a partition wall portion, which blocks the sputtered particles flying from the targets and which includes flange portions that extend from the partition wall portion and face a portion of the gap between the adjoining ones of the targets, is provided between the adjoining ones of the targets; and 
 the flange portions are provided above the targets such that lower surfaces of each of the flange portions are above uppermost surfaces of the targets, and the lower surfaces of each of the flange portions overlap ends of the gap between the adjoining ones of the targets. 
 
     
     
       8. The method of  claim 7 , wherein the targets are made of a material containing IGZO.