Reflective optical source device

Abstract

Disclosed is an optical source device. The optical source device includes: a mode converter configured to be optically coupled with an optical fiber; a semiconductor optical amplifier coupled with the mode converter, and configured to amplify an optical signal input through the optical fiber; and an electro absorption modulator coupled to the optical amplifier, and configured to modulate the amplified optical signal and output the modulated optical signal, in which each of the semiconductor optical amplifier and the optical absorption modulator includes a heater.

What is claimed is: 
     
       1. An optical source device, comprising:
 a mode converter configured to be optically coupled with an optical fiber; a semiconductor optical amplifier coupled with the mode converter, and configured to amplify an optical signal input through the optical fiber; and 
 an electro absorption modulator coupled to the optical amplifier, and configured to modulate the amplified optical signal and output the modulated optical signal, 
 wherein each of the semiconductor optical amplifier and the electro absorption modulator includes a heater for controlling a temperature. 
 
     
     
       2. The optical source device of  claim 1 , wherein the mode converter, the semiconductor optical amplifier, and the electro absorption modulator are coupled by using a butt joint to be monolithically integrated. 
     
     
       3. The optical source device of  claim 1 , wherein the mode converter includes a waveguide in a form tilted with respect to a surface of the mode converter coupled with the optical amplifier in order to decrease an optical reflection. 
     
     
       4. The optical source device of  claim 1 , wherein the semiconductor optical amplifier includes an optical amplification active layer, and
 the heater included in the semiconductor optical amplifier adjusts a carrier density of the optical amplification active layer through a control of a temperature of the optical amplification active layer. 
 
     
     
       5. The optical source device of  claim 4 , wherein a metal configuring the heater is formed of a metal material having larger resistance than that of an electrode formed in the semiconductor optical amplifier, and the relatively large amount of heat compared to the amount of injected current. 
     
     
       6. The optical source device of  claim 1 , wherein the electro absorption modulator includes an Electro Absorption Modulation-Multi Quantum Well (EMW-MQW)
 the heater included in the electro absorption modulator controls a temperature of the EMW-MQW layer. 
 
     
     
       7. The optical source device of  claim 6 , wherein a metal configuring the heater is formed of a metal material having larger resistance than that of an electrode formed in the electro absorption modulator, and the relatively large amount of heat compared to the amount of injected current. 
     
     
       8. The optical source device of  claim 7 , wherein the electro absorption modulator has a form in which a polymer material is filled in both side surfaces of the deep ridge waveguide, and
 the polymer material includes at least one of Benzocyclobutene (BCB) or polyimide. 
 
     
     
       9. The optical source device of  claim 1 , wherein a front surface of the electro absorption modulator are anti-reflectively coated, and a rear surface of the electro absorption modulator is high-reflectively coated, and
 the anti-reflection coating and the high-reflection coating use at least one of titanium dioxide (TiO 2 ) and silicon dioxide (SiO 2 ).