Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin body 10 including the skeleton structure is taken out from the recessed hole to complete manufacturing the semiconductor device. Using a simple molding jig including the aluminum plate, and covering the skeleton structure with the epoxy resin body, a highly reliable semiconductor device with a case-less construction can be manufactured.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 disposing a releasing sheet into a recessed hole formed in a support plate; 
 disposing a skeleton structure of the semiconductor device, before covering the skeleton structure with epoxy resin, into the recessed hole, the skeleton structure having a leading out terminal, the skeleton structure of the semiconductor device being turned upside down and disposed in the recessed hole with an arrangement not to be in contact with an inner wall of the recessed hole; 
 pouring liquid epoxy resin into the recessed hole, the liquid epoxy resin filling the recessed hole up to a level such that an end portion of the leading out terminal is extending out of an upper surface of the liquid epoxy resin, wherein a back surface of a metallic base plate composing the skeleton structure of the semiconductor device is exposed from the upper surface of the poured liquid epoxy resin; 
 hardening the liquid epoxy resin to obtain an epoxy resin body containing the skeleton structure; and 
 taking out the hardened epoxy resin body from the recessed hole. 
 
     
     
       2. The method of manufacturing a semiconductor device according to  claim 1 , wherein the configuration of the recessed hole is a rectangular parallelepiped. 
     
     
       3. The method of manufacturing a semiconductor device according to  claim 1 , wherein the configuration of the releasing sheet is such a configuration that fits to the recessed hole. 
     
     
       4. The method of manufacturing a semiconductor device according to  claim 1 , wherein the releasing sheet is fitted in close contact to inner sidewalls of the recessed hole. 
     
     
       5. The method of manufacturing a semiconductor device according to  claim 1 , wherein the releasing sheet is fitted in close contact to an inner wall of the recessed hole by evacuation. 
     
     
       6. The method of manufacturing a semiconductor device according to  claim 1 , wherein viscosity of the liquid epoxy resin is at most about 50 Pa-s at a time of pouring. 
     
     
       7. The method of manufacturing a semiconductor device according to  claim 1 , wherein the releasing sheet is made of a fluorine-containing resin. 
     
     
       8. The method of manufacturing a semiconductor device according to  claim 7 , wherein the fluorine-containing resin is selected from the group consisting of polytetrafluoroethylene, polytetrafluoroethylene/perfluoroalkoxyethylene copolymer, and tetrafluoroethylene/ethylene copolymer. 
     
     
       9. The method of manufacturing a semiconductor device according to  claim 1 , wherein adhesion strength between the releasing sheet and the hardened epoxy resin body is at most about 10 kPa. 
     
     
       10. The method according to  claim 1 , wherein the semiconductor device manufactured by the method has a case-less construction and comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer and disposed through the insulated circuit board with a conducting pattern and the metallic base plate; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       11. The method according to  claim 7 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       12. The method according to  claim 1 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       13. The method according to  claim 2 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       14. The method according to  claim 3 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       15. The method according to  claim 4 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       16. The method according to  claim 5 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 a metallic base plate that is adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       17. The method according to  claim 6 , wherein the semiconductor device manufactured by the method comprises:
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 the metallic base plate, adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed. 
 
     
     
       18. A method of manufacturing a semiconductor device, comprising:
 disposing a releasing sheet into a recessed hole formed in a support plate, the recessed hole having a top opening and a bottom; 
 disposing a skeleton structure of the semiconductor device, before covering the skeleton structure with epoxy resin, to the bottom of the recessed hole, the skeleton structure having a leading out terminal; 
 pouring liquid epoxy resin down into the recessed hole through the top opening of the recessed hole, the liquid epoxy resin filling the recessed hole up to a level such that an end portion of the leading out terminal is extending out of an upper surface of the liquid epoxy resin; 
 hardening the liquid epoxy resin to obtain an epoxy resin body containing the skeleton structure; and 
 taking out the hardened epoxy resin body from the recessed hole, 
 wherein the semiconductor device manufactured by the method has a case-less construction and comprises: 
 an insulated circuit board with a conducting pattern, the circuit board having a conductive layer on a back surface of an insulating substrate of the circuit board and a conducting pattern layer on a front surface of the insulating substrate of the circuit board; 
 a metallic base plate that is adhered through a solder to the conductive layer of the insulated circuit board; 
 a semiconductor chip adhered to the conducting pattern layer; 
 the externally leading out terminal, adhered to the conducting pattern layer and disposed through the insulated circuit board with a conducting pattern and the metallic base plate; 
 a bonding wire connecting the semiconductor chip and the conducting pattern layer; and 
 the epoxy resin body from which a back surface of the metallic base plate and an end portion of the externally leading out terminal are exposed.