Imaging device having a selenium containing photoelectric conversion layer

Abstract

To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes a seventh transistor. The imaging device can compensate variation in electrical characteristics of an amplifier transistor included in the first circuit.

What is claimed is: 
     
       1. An imaging device comprising:
 a first circuit; and 
 a second circuit, 
 wherein the first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor, 
 wherein the second circuit includes a seventh transistor, 
 wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor, 
 wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, 
 wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor, 
 wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the first capacitor; 
 wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor, 
 wherein one of a source and a drain of the fourth transistor is electrically connected to the other terminal of the second capacitor, 
 wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor, 
 wherein one terminal of the third capacitor is electrically connected to the other terminal of the second capacitor, 
 wherein the other terminal of the third capacitor is electrically connected to the other of the source and the drain of the fifth transistor, 
 wherein a gate of the fifth transistor is electrically connected to the one terminal of the third capacitor, 
 wherein one of a source and a drain of the sixth transistor is electrically connected to the other of the source and the drain of the fifth transistor, 
 wherein the other of the source and the drain of the sixth transistor is electrically connected to one of a source and a drain of the seventh transistor, and 
 wherein the photoelectric conversion element contains selenium in a photoelectric conversion layer. 
 
     
     
       2. The imaging device according to  claim 1 , further comprising a third circuit,
 wherein the third circuit includes an eighth transistor and a resistor, 
 wherein one of a source and a drain of the eighth transistor is electrically connected to the other of the source and the drain of the sixth transistor, and 
 wherein the other of the source and the drain of the eighth transistor is electrically connected to one terminal of the resistor. 
 
     
     
       3. The imaging device according to  claim 1 ,
 wherein the second circuit includes a ninth transistor, 
 wherein one of a source and a drain of the ninth transistor is electrically connected to the other of the source and the drain of the seventh transistor, 
 wherein a gate of the ninth transistor is electrically connected to a gate of the seventh transistor, and 
 wherein a gate of the ninth transistor is electrically connected to the other of the source and the drain of the ninth transistor. 
 
     
     
       4. The imaging device according to  claim 1 , wherein the other of the source and the drain of the third transistor is electrically connected to the other terminal of the photoelectric conversion element. 
     
     
       5. The imaging device according to  claim 1 ,
 wherein the pixel circuit includes a fourth capacitor, and 
 wherein one terminal of the fourth capacitor is electrically connected to the one of the source and the drain of the third transistor. 
 
     
     
       6. The imaging device according to  claim 5 , wherein the other terminal of the fourth capacitor is electrically connected to the other of the source and the drain of the fourth transistor. 
     
     
       7. The imaging device according to  claim 1 ,
 wherein one or all of the first to ninth transistors include oxide semiconductors in active layers, and 
 wherein the oxide semiconductor contains In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). 
 
     
     
       8. An electronic device comprising a display device, an operation key, a shutter button, and the imaging device according to  claim 1 .