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US9607737B2ActiveUtilityPatentIndex 49

Semiconductive polyolefin composition

Assignee: BOREALIS TECH OYPriority: Oct 27, 2006Filed: Mar 12, 2015Granted: Mar 28, 2017
Est. expiryOct 27, 2026(~0.3 yrs left)· nominal 20-yr term from priority
Inventors:FAGRELL OLAWATSON ANN
C08L 23/0892C08L 2666/06C08L 23/10C08K 2201/001C08L 23/06C09D 5/20C08K 3/04Y10T428/2929H01B 1/24C08L 23/142C08L 2203/202H01B 9/006B29C 47/0004C09D 5/24B29C 48/022
49
PatentIndex Score
1
Cited by
1
References
25
Claims

Abstract

A semiconductive polyolefin composition comprising (i) up to 80 wt. % of a polyolefin (I), (ii) carbon black, and (iii) up to 60 wt. % of a polymer (II) having a melting point of not less than 100° C., wherein the polyolefin (I) comprises two different ethylene copolymers: a first ethylene copolymer and second ethylene copolymer; wherein the first ethylene copolymer comprises polar group containing co-monomers in the amount of 3.5 mol % or less; and wherein the second ethylene copolymer comprises silane group containing co-monomers in the amount of 0.7 mol % or less.

Claims

exact text as granted — not AI-modified
We claim: 
     
       1. A semiconductive polyolefin composition comprising:
 (i) up to 80 wt. % of a polyolefin ( 1 ), 
 (ii) carbon black, and 
 (iii) up to 60 wt. % of a polymer (II) having a melting point of not less an 100° C.; 
 wherein the polyolefin (I) comprises a first ethylene copolymer and second ethylene copolymer; 
 wherein the first ethylene copolymer comprises a polar group containing co-monomers in an amount of 3.5 mol % or less; and 
 wherein the second ethylene copolymer comprises a si lane group containing co-monomers in an amount of 0.7 mol % or less. 
 
     
     
       2. The semiconductive polyolefin composition according to  claim 1 , wherein the polyolefin (I) has a degree of crystallinity of not less than 27%. 
     
     
       3. The semiconductive polyolefin composition according to  claim 1 , wherein polyolefin (I) is present in an amount of 40 to 60 wt. %. 
     
     
       4. The semiconductive polyolefin composition according to claim wherein polymer (II) is present in an amount of 5 to 40 wt. %. 
     
     
       5. The semiconductive polyolefin composition according to  claim 1 , wherein polymer (II) has a melting poi in the range of from 100 to 170° C. or from 110 to 135° C. 
     
     
       6. The semiconductive polyolefin composition according to  claim 1 , wherein the polyolefin (I) is a high pressure low density ethylene (LDPE) copolymer. 
     
     
       7. The semiconductive polyolefin composition according to  claim 1 , wherein the polyolefin (I) is a terpolymer of ethylene with the polar group containing co-monomer and the silane-group containing co-monomer. 
     
     
       8. The semiconductive polyolefin composition according to  claim 7 , wherein the polar co-monomer is selected from the group consisting of acrylate and acetate co-monomers. 
     
     
       9. The semiconductive polyolefin composition according to  claim 7 , wherein the silane-group containing co-monomer is selected from the group consisting of vinyl tri-alkoxy silanes. 
     
     
       10. The semiconductive polyolefin composition according to  claim 1 , wherein the polar co-monomer is selected from the group consisting of acrylate and acetate co-monomers. 
     
     
       11. The semiconductive polyolefin composition according to  claim 1 , wherein the silane-group containing co-monomer is selected from the group consisting of vinyl tri-alkoxy silanes. 
     
     
       12. The semiconductive polyolefin composition according to  claim 1 , wherein the polymer (II) is selected from the group consisting of polyethylenes, polypropylenes or polybutylenes. 
     
     
       13. The semiconductive polyolefin composition according to  claim 12 , wherein the polymer (II) is a homopolymer, a random copolymer or a heterophasic copolymer of propylene. 
     
     
       14. A power cable comprising at least one semiconductive layer comprising a semiconductive polyolefin composition according to  claim 1 . 
     
     
       15. The power cable according to  claim 14 , which is a medium voltage power cable. 
     
     
       16. A power cable comprising a conductor, a first semiconductive layer (a), an insulation layer (b) and a second semiconductive layer (c) each coated on the conductor in this order, wherein at least one of the first and second semiconductive layer(s) ((a) and (c)) comprises the semiconductive polyolefin composition according to  claim 1 . 
     
     
       17. The power cable according to  claim 16 , wherein at least one of the first (a) and the second (c) semiconductive layers is cross-linked. 
     
     
       18. The power cable according to  claim 16 , wherein the second semiconductive layer (c) is non-strippable from the insulation layer. 
     
     
       19. The power cable according to  claim 16 , which is a medium voltage power cable. 
     
     
       20. A process for producing a power cable comprising a conductor, a first semiconductive layer (a), an insulation layer (b) and a second semiconductive layer (c) each coated on the conductor in this order, comprising the steps of:
 (i) providing the semiconductive polyolefin composition according to  claim 1 , by blending the polyolefin (I), carbon black and the polymer (II) together, optionally with additives, at a temperature above melting point of the polymer components, 
 (ii) co-extruding the melt at elevated temperature above the melting point of the polymer components, together with the polymer melt for any of the other layers, on a conductor for forming a layered power cable structure, and 
 (iii) winding the obtained layered power cable onto a cable drum. 
 
     
     
       21. The process according to  claim 20 , wherein the power cable comprises at least one cross-linkable layer, a cross-linkable insulation layer (b) and a cross-linkable second semiconductive layer (c). 
     
     
       22. The process according to  claim 20 , wherein the power cable is further subjected to a cross-linking step at elevated temperature. 
     
     
       23. The process according to  claim 20 , wherein the cross-linking step includes a steam or water treatment. 
     
     
       24. The process according to  claim 22 , wherein the cross-linking step is effected at a cross-linking temperature of not less than 75° C. 
     
     
       25. The process according to  claim 20 , wherein the power cable comprises at least a cross-linkable first semiconductive layer (a), a cross-linkable insulation layer (b) and a cross-linkable second semiconductive layer (c).

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