Back contact perovskite solar cell
Abstract
A method is provided for forming a back contact perovskite solar cell. A substrate is coated with a positive electrode layer. The positive electrode layer is then conformally coated with a first insulator. A plurality of negative electrode segments are selectively deposited overlying the first insulator layer, and a second insulator layer is conformally deposited overlying the negative electrode segments and first insulator layer. The second insulator layer is selectively etched to expose the negative electrode segments, and an n-type semiconductor is selectively deposited overlying each exposed negative electrode segment to form n-type contacts. The first and second insulator layers are then selectively etched to expose positive electrode segments. A p-type semiconductor is selectively deposited over each exposed positive electrode segment to form p-type contacts. Finally, a hybrid organic/inorganic perovskite (e.g., CH 3 NH 3 Pbl 3-X Cl X ) layer is conformally deposited overlying the p-type and n-type contacts. A back contact solar cell is also provided.
Claims
exact text as granted — not AI-modifiedWe claim:
1. A back contact perovskite solar cell, the solar cell comprising:
a substrate;
a plurality of p-type contacts overlying the substrate, each p-type contact comprising:
a positive electrode;
a p-type semiconductor segment overlying the positive electrode;
a plurality of n-type contacts overlying the substrate, each n-type contact comprising:
a negative electrode;
an n-type semiconductor segment overlying the negative electrode;
a hybrid organic/inorganic perovskite layer overlying the p-type and n-type contacts;
wherein the positive electrode is a layer conformally coating and in immediate contact with the substrate; and,
wherein each n-type contact negative electrode is a negative electrode segment, and each n-type contact further comprises an insulator segment interposed between the positive electrode layer and the negative electrode segment, and insulator sidewalls overlying each insulator segment, and wherein the negative electrode segments and the n-type semiconductor segments are formed between the insulator sidewalls.
2. The solar cell of claim 1 wherein the n-type semiconductor is selected from a group consisting of zinc oxide (ZnO), tin oxide (SnO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), strontium titanate (SrTiO 3 ), zinc titanate (ZnTiO 3 ), and copper titanate (CuTiO 3 ), and titanium oxide (TiO 2 ).
3. The solar cell of claim 1 wherein the p-type semiconductor is selected from a group consisting of stoichiometric and non-stoichiometric oxides.
4. The solar cell of claim 3 wherein the p-type semiconductor is selected from a group consisting of molybdenum oxide (MoO 3 ), nickel oxide (NiO), vanadium oxide (V 2 O 5 ), copper(I) oxide (Cu 2 O), and tungsten oxide (WO 3 ).
5. The solar cell of claim 1 wherein the negative electrode is a material selected from a group consisting of Zn, aluminum (Al), and Ti.
6. The solar cell of claim 1 wherein the positive electrode is a material selected from a group consisting of Mo and Ni.
7. The solar cell of claim 1 wherein the hybrid organic/inorganic perovskite layer has a general formula of ABX z Y 3-z ;
where “A” is an organic monocation;
where B is a transition metal dication;
where X and Y are inorganic monoanions; and,
where z is in a range of 0 to 1.5.
8. The solar cell of claim 7 wherein the organic monocation “A” is a substituted ammonium cation with the general formula of R 1 R 2 R 3 R 4 N;
where R is selected from a group consisting of hydrogen, and compounds derived from linear alkanes, branched alkanes, cycloalkanes, (poly)cycloalkanes, cis- and trans-linear alkenes, cis- and trans-branched alkenes, linear alkynes, branched alkynes, (poly)alkynes, aromatic hydrocarbons, (poly)aromatic hydrocarbons, heteroarenes, (poly)heteroarenes, thiophenes, (poly)thiophenes, (poly)anilines, and combination of above-mentioned elements;
where the dication B is selected from a group consisting of Pb 2+ , Sn 2+ , Cu 2+ , Ge 2+ , Zn 2+ , Ni 2+ , Fe 2+ , Eu 2+ , Eu 2+ , and Co 2+ ; and,
where the monoanions X and Y are independently selected from a group consisting of halogenides of F-, Cl-, Br-, and I-, cyanides, and thiocyanides.
9. The solar cell of claim 1 wherein the hybrid organic/inorganic perovskite is CH 3 NH 3 Pbl 3-X Cl X .
10. A back contact perovskite solar cell, the solar cell comprising:
a substrate;
a plurality of p-type contacts overlying the substrate, each p-type contact comprising:
a positive electrode;
a p-type semiconductor segment overlying the positive electrode;
a plurality of n-type contacts overlying the substrate, each n-type contact comprising:
a negative electrode;
an n-type semiconductor segment overlying the negative electrode; and,
a CH 3 NH 3 Pbl 3-X Cl X layer overlying the p-type and n-type contacts.
11. The solar cell of claim 10 wherein the n-type semiconductor is selected from a group consisting of zinc oxide (ZnO), tin oxide (SnO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), strontium titanate (SrTiO 3 ), zinc titanate (ZnTiO 3 ), and copper titanate (CuTiO 3 ), and titanium oxide (TiO 2 ).
12. The solar cell of claim 10 wherein the p-type semiconductor is selected from a group consisting of stoichiometric and non-stoichiometric oxides.
13. The solar cell of claim 12 wherein the p-type semiconductor is selected from a group consisting of molybdenum oxide (MoO 3 ), nickel oxide (NiO), vanadium oxide (V 2 O 5 ), copper(I) oxide (Cu 2 O), and tungsten oxide (WO 3 ).
14. The solar cell of claim 10 wherein the negative electrode is a material selected from a group consisting of Zn, aluminum (Al), and Ti.
15. The solar cell of claim 10 wherein the positive electrode is a material selected from a group consisting of Mo and Ni.
16. A back contact perovskite solar cell, the solar cell comprising:
a substrate;
a plurality of p-type contacts overlying the substrate, each p-type contact comprising:
a positive electrode;
a p-type semiconductor segment overlying the positive electrode;
a plurality of n-type contacts overlying the substrate, each n-type contact comprising:
a negative electrode;
an n-type semiconductor segment overlying the negative electrode;
a hybrid organic/inorganic perovskite layer overlying the p-type and n-type contacts;
wherein the negative electrode is a layer conformally coating and in immediate contact with the substrate; and,
wherein each p-type contact positive electrode is a positive electrode segment, and each p-type contact further comprises an insulator segment interposed between the negative electrode layer and the positive electrode segment, and insulator sidewalls overlying each insulator segment, and wherein the positive electrode segments and the p-type semiconductor segments are formed between the insulator sidewalls.Cited by (0)
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