Solid state memory unit cooling apparatus

Abstract

Apparatus for thermally cooling a solid state memory unit, such as but not limited to densely packed flash memory storage devices in a data storage system. In some embodiments, a thermally conductive corrugated plate has one or more corrugations. The corrugations are adapted for positioning adjacent at least one solid state memory unit to form one or more channels for a cooling fluid to flow therethrough.

What is claimed is: 
     
       1. An apparatus comprising:
 first and second solid state memory units each comprising a printed circuit board (PCB) and respectively supporting first and second solid state memory integrated circuit devices each having an outer planar surface, the first solid state memory integrated circuit device vertically aligned with the second solid state memory integrated circuit device; and 
 a thermally conductive corrugated plate having a plurality of parallel corrugations concurrently contacting the outer planar surfaces of the first and second solid state memory integrated circuit devices, the parallel corrugations having a first corrugation pattern between the first and second solid state memory integrated circuit devices and having a second corrugation pattern distal the solid state memory integrated circuit devices, the first and second corrugation patterns being different. 
 
     
     
       2. The apparatus of  claim 1 , wherein the second corrugation pattern comprises a plurality of corrugations having a varying pitch along a longitudinal length of the plate. 
     
     
       3. The apparatus of  claim 1 , wherein the first corrugation pattern comprises a plurality of corrugations having a nominally constant pitch along a longitudinal length of the plate. 
     
     
       4. The apparatus of  claim 1 , wherein the corrugations of the first corrugation pattern have a nominally sinusoidal cross-sectional shape. 
     
     
       5. The apparatus of  claim 1 , wherein the plate further comprises at least one planar portion between adjacent sets of corrugations. 
     
     
       6. The apparatus of  claim 1 , further comprising a blocking mechanism disposed within at least one of the channels formed by the corrugations to block the flow of cooling fluid therethrough. 
     
     
       7. The apparatus of  claim 1 , wherein the corrugations of the first corrugation pattern each contact an outer surface of an integrated circuit package of the solid state memory unit to conduct heat therefrom, the corrugations further configured to define said channels through which the flow of cooling fluid is directed. 
     
     
       8. The apparatus of  claim 1 , wherein the corrugations of the first corrugation pattern have a nominally constant peak-to-peak amplitude along a longitudinal length of the plate. 
     
     
       9. The apparatus of  claim 1 , wherein the plate is formed of a thermally conductive material coated with a layer of silicone gel thermal interface material (TIM). 
     
     
       10. The apparatus of  claim 1 , wherein the corrugated plate is formed of metal or a thermally conductive liquid crystal polymer. 
     
     
       11. The apparatus of  claim 1 , wherein at least one channel defined by the corrugations of the second corrugation pattern is blocked to prevent air flow through the at least one channel. 
     
     
       12. The apparatus of  claim 1 , further comprising a fluidic flow source which generates a cooling flow of fluid that passes through channels formed by the plurality of parallel corrugations to draw heat from the solid state memory integrated circuit device. 
     
     
       13. The apparatus of  claim 12 , wherein the fluidic flow source directs the cooling flow of fluid in a lateral direction with respect to the plate so that the fluid passes parallel to the channels formed by the corrugations. 
     
     
       14. The apparatus of  claim 12 , wherein the fluidic flow source directs the cooling flow of fluid in a longitudinal direction with respect to the plate so that the fluid passes adjacent each of the plurality of corrugations. 
     
     
       15. The apparatus of  claim 1 , wherein the second corrugation pattern has a varying peak-to-peak amplitude along a longitudinal length of the plate. 
     
     
       16. An apparatus comprising:
 a data storage device comprising a base printed circuit board (PCB) and first and second solid state memory units supported by the base PCB, each of the first and second solid state memory units comprising a support PCB and at least one solid state memory integrated circuit device; 
 a solid state memory unit cooling apparatus disposed between the first and second solid state memory units and comprising a thermally conductive corrugated plate having a plurality of corrugations that form a plurality of parallel channels that extend in a lateral direction across the plate, wherein a first plurality of the corrugations contacts the solid state memory integrated circuit device of the first solid state memory unit with a first corrugation pattern and a second plurality of the corrugations contacts the solid state memory integrated circuit device of the second solid state memory unit with the first corrugation pattern, the first and second solid state memory integrated circuit device separated by a separation distance, the corrugated plate having a second corrugation pattern throughout the separation distance, the first and second corrugation patterns being different; and 
 a cooling fan configured to generate a flow of cooling fluid that passes through the plurality of parallel channels to remove heat from the first and second solid state memory units. 
 
     
     
       17. The apparatus of  claim 16 , wherein the solid state memory integrated circuit devices are characterized as flash memory devices. 
     
     
       18. The apparatus of  claim 16 , wherein the plate comprises a layer of metal and a layer of a thermal interface material (TIM) affixed to the layer of metal, the TIM contactingly engaging a selected one of the solid state memory integrated circuit devices.