Semiconductor device

Abstract

A semiconductor device comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween, a conductive film, an insulating film over the gate electrode and the conductive film, and a gate wiring over the insulating film. The gate wiring extends across the conductive film.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a semiconductor film and a gate electrode with a gate insulating film interposed therebetween; 
 a conductive film; 
 an insulating film over the gate electrode and the conductive film; and 
 a gate wiring over the gate electrode and the conductive film, 
 wherein the insulating film comprises an organic insulating material, 
 wherein the gate electrode and the conductive film each comprise the same material, and 
 wherein the gate wiring extends across the conductive film. 
 
     
     
       2. A semiconductor device according to  claim 1 , further comprising:
 a second conductive film over the insulating film, 
 wherein the conductive film is electrically connected to the semiconductor film through the second conductive film. 
 
     
     
       3. A semiconductor device according to  claim 1 , wherein the gate electrode is over the semiconductor film. 
     
     
       4. A semiconductor device according to  claim 1 , further comprising a liquid crystal layer over the gate wiring. 
     
     
       5. A semiconductor device according to  claim 1 , wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system. 
     
     
       6. A semiconductor device comprising:
 a first conductive film including a gate electrode portion and a capacitor electrode portion; 
 a first semiconductor film; 
 a gate insulating film between the gate electrode portion and the first semiconductor film; 
 an insulating film over the first conductive film; 
 a gate wiring over the insulating film; and 
 a capacitor comprising the capacitor electrode portion as a first capacitor electrode and a second semiconductor film as a second capacitor electrode, 
 wherein the first conductive film extends across the gate wiring. 
 
     
     
       7. A semiconductor device according to  claim 6 , wherein the insulating film comprises an organic resin material. 
     
     
       8. A semiconductor device according to  claim 6 , further comprising:
 a second conductive film; and 
 a third conductive film over the insulating film, 
 wherein the second conductive film is electrically connected to the first semiconductor film through the third conductive film. 
 
     
     
       9. A semiconductor device according to  claim 6 , wherein the first conductive film is over the first semiconductor film. 
     
     
       10. A semiconductor device according to  claim 6 , further comprising a liquid crystal layer over the gate wiring. 
     
     
       11. A semiconductor device according to  claim 6 , wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system. 
     
     
       12. A semiconductor device according to  claim 6 , wherein bottom surfaces of the first semiconductor film and the second semiconductor film are coplanar.