US9773850B2ActiveUtilityA1

Organic light emitting diode display

54
Assignee: SAMSUNG DISPLAY CO LTDPriority: Jan 14, 2015Filed: Jan 6, 2017Granted: Sep 26, 2017
Est. expiryJan 14, 2035(~8.5 yrs left)· nominal 20-yr term from priority
H01L 27/3276H01L 2251/558H01L 27/3258H01L 2251/5392H01L 27/3248H01L 27/3246H10K 59/131H10K 59/124H10K 59/123H10K 59/122H10K 2102/341H10K 2102/351
54
PatentIndex Score
0
Cited by
6
References
12
Claims

Abstract

An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel region of the substrate and the peripheral region; pixel electrodes formed over the pixel region; and a pixel defining layer formed over the pixel region and the peripheral region. The pixel defining layer defines pixel openings overlapping the pixel electrodes, respectively. The device further comprises organic light emitting layers formed over the pixel region, and disposed in the pixel openings and over the pixel electrodes, respectively; and a common electrode formed over the pixel and peripheral regions. The common electrode is disposed over the pixel defining layer and the organic light emitting layers. The common electrode contacts the common voltage line. The passivation layer comprises a portion overlapping the common voltage line but not overlapping the pixel defining layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An organic light emitting diode display, comprising:
 a substrate including a pixel region and a peripheral region enclosing the pixel region; 
 a scan line on the substrate and transferring a scan signal; 
 a data line crossing the scan line and transferring a data voltage; 
 a switching transistor disposed in the pixel region and electrically connected to the scan line and the data line; 
 a driving transistor disposed in the pixel region and electrically connected to the switching transistor; 
 a pixel-area passivation layer disposed on the switching transistor and the driving transistor; 
 a pixel electrode disposed on the pixel-area passivation layer; 
 a pixel partition wall layer disposed on the pixel-area passivation layer and having a pixel opening overlapping the pixel electrode; 
 an organic light emission layer disposed in the pixel opening and disposed on the pixel electrode; 
 a common electrode disposed on the organic light emission layer and the pixel partition wall layer; 
 a common voltage line disposed in the peripheral region and electrically connected to the common electrode; and 
 a peripheral passivation layer disposed in the peripheral region and contacting a side wall of the common voltage line, 
 wherein the peripheral passivation layer is made of the same material as the pixel-area passivation layer. 
 
     
     
       2. The organic light emitting diode display of  claim 1 , further comprising:
 a peripheral partition wall layer disposed on the peripheral passivation layer and spaced apart from the common voltage line in a plane view, 
 wherein the peripheral partition wall layer is positioned between the common voltage line and the pixel region in a plane view. 
 
     
     
       3. The organic light emitting diode display of  claim 2 , wherein the peripheral partition does not overlap an edge portion of the peripheral passivation layer in a plane view. 
     
     
       4. The organic light emitting diode display of  claim 3 , wherein the edge portion of the peripheral passivation layer is tapered at an inclination angle smaller than about 30°. 
     
     
       5. The organic light emitting diode display of  claim 3 , wherein heights of an upper surface of the common voltage line, an upper surface of the edge portion of the peripheral passivation layer, and an upper surface of the edge portion of the peripheral partition wall layer are increased in this order to form a step. 
     
     
       6. The organic light emitting diode display of  claim 1 , wherein a thickness of the peripheral passivation layer is smaller than a thickness of the pixel-area passivation layer. 
     
     
       7. The organic light emitting diode display of  claim 6 , wherein the thickness of the peripheral passivation layer is larger than a thickness of the common voltage line and is smaller than a thickness of the peripheral partition wall layer. 
     
     
       8. The organic light emitting diode display of  claim 7 , wherein the thickness of the peripheral partition wall layer is larger than a thickness of the pixel partition wall layer. 
     
     
       9. The organic light emitting diode display of  claim 8 , wherein a height of a portion of the upper surface of the pixel partition wall layer is the same as a height of a portion of an upper surface of the peripheral partition wall layer with reference to an upper surface of the substrate. 
     
     
       10. The organic light emitting diode display of  claim 1 , wherein the driving transistor includes a gate electrode, a semiconductor, a source electrode, and a drain electrode, and
 wherein the common voltage line is made of the same material as that of the source electrode and the drain electrode. 
 
     
     
       11. The organic light emitting diode display of  claim 10 , wherein the common voltage line is electrically connected to a portion of the common electrode which is not covered by the peripheral passivation layer. 
     
     
       12. The organic light emitting diode display of  claim 11 , further comprising:
 a common voltage pad to which the common voltage is applied from the outside; and 
 a common voltage connecting part configured to connect the common voltage pad and the common voltage line, 
 wherein the common voltage connecting part is made of the same material as that of the gate electrode.

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