Driver circuit and switch driving method

Abstract

There are provided a driver circuit, a method of driving a power switch, and a ballast circuit. For example, there is provided a driver circuit configured to receive a control signal and operate a power switch. The driver circuit includes a first switch, a second switch, and a capacitor coupled to control terminals of the first and second switches. The driver circuit further includes a first diode coupled to a first bias terminal of the driver circuit and to the capacitor. Furthermore, the driver circuit includes a second diode coupled to a second bias terminal of the driver circuit and to a terminal of the power switch.

What is claimed is: 
     
       1. A driver circuit configured to receive a control signal and operate a power switch, the driver circuit comprising:
 a first switch; 
 a second switch; 
 a capacitor coupled to control terminals of the first and second switches; 
 a first diode coupled to a first bias terminal of the driver circuit and to the capacitor; 
 a second diode coupled to a second bias terminal of the driver circuit and to a terminal of the power switch; 
 wherein the capacitor is configured to control a switching behavior of the power switch according to a differential voltage equal to a difference between a voltage of the first bias terminal and a logic drive voltage of a logic drive voltage port of the driver circuit. 
 
     
     
       2. The driver circuit of  claim 1 , wherein the first and second switches are complementary switches. 
     
     
       3. The driver circuit of  claim 1 , wherein the first and second switches are each metal-oxide-semiconductor field effect transistors (MOSFETs). 
     
     
       4. The driver circuit of  claim 3 , wherein the first switch is a p-channel MOSFET and the second switch is an n-channel MOSFET. 
     
     
       5. The driver circuit of  claim 1 , wherein the power switch is a one of (i) a silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) and (ii) an insulated-gate bipolar transistor (IGBT). 
     
     
       6. The driver circuit of  claim 1 , wherein the power switch is a power metal-oxide-semiconductor field effect transistor (MOSFET). 
     
     
       7. The driver circuit of  claim 1 , wherein the second diode is a Zener diode. 
     
     
       8. The driver circuit of  claim 1 , wherein the first bias terminal is a positive bias terminal and the second bias terminal is a negative bias terminal. 
     
     
       9. The driver circuit of  claim 1 , wherein the first bias terminal is configured to provide a level-shifted bias from a positive bias and the second bias terminal is configured to provide a level-shifted bias from a negative bias. 
     
     
       10. The driver circuit of  claim 1 , further comprising a control port configured to receive a control signal for driving the first and second switches. 
     
     
       11. A light-emitting diode (LED) ballast circuit, comprising:
 a power switch; 
 a driver circuit configured to operate the power switch, the driver circuit including:
 a first switch; 
 a second switch; 
 a capacitor coupled to control terminals of the first and second switches; 
 a first diode coupled to a first bias terminal of the driver circuit and to the capacitor; 
 a second diode coupled to a second bias terminal of the driver circuit and to a terminal of the power switch; 
 
 wherein the capacitor is configured to control a switching behavior of the power switch according to a differential voltage equal to a difference between a voltage of the first bias terminal and a logic drive voltage of a logic drive voltage port of the driver circuit. 
 
     
     
       12. The ballast circuit of  claim 11 , wherein the first and second switches are complementary switches. 
     
     
       13. The ballast circuit of  claim 11 , wherein the first and second switches are each metal-oxide-semiconductor field effect transistors (MOSFETs). 
     
     
       14. The ballast circuit of  claim 13 , wherein the first switch is a p-channel MOSFET and the second switch is an n-channel MOSFET. 
     
     
       15. The ballast circuit of  claim 11 , wherein the power switch is a one of (i) a silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) and (ii) an insulated-gate bipolar transistor (IGBT). 
     
     
       16. The ballast circuit of  claim 11 , wherein the power switch is a power metal-oxide-semiconductor field effect transistor (MOSFET).