Semiconductor device and semiconductor system

Abstract

A semiconductor device is provided. The semiconductor device includes a seal ring and a noise-absorbing circuit. The noise-absorbing circuit is electrically connected between the seal ring and a ground pad. The noise-absorbing circuit includes at least one capacitor and at least one inductor to form a first noise-absorbing path, a second noise-absorbing path and a third noise-absorbing path.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a ground pad; 
 a seal ring, encircling the ground pad; and 
 a noise-absorbing circuit electrically connected between the seal ring and the ground pad, wherein the noise-absorbing circuit comprises at least one capacitor and at least one inductor directly below the ground pad. 
 
     
     
       2. The semiconductor device as claimed in  claim 1 , wherein the at least one capacitor comprises a first capacitor and a second capacitor, the at least one inductor comprises a first inductor, the first capacitor and the first inductor are connected in series to form a first noise-absorbing path of the noise-absorbing circuit, and the second capacitor forms a second noise-absorbing path of the noise-absorbing circuit. 
     
     
       3. The semiconductor device as claimed in  claim 2 , wherein the noise-absorbing circuit further comprises a third noise-absorbing path which is electrically short between the ground pad and the seal ring. 
     
     
       4. The semiconductor device as claimed in  claim 3 , wherein the first noise-absorbing path, the second noise-absorbing path and the third noise-absorbing path are arranged in parallel. 
     
     
       5. The semiconductor device as claimed in  claim 3 , wherein the first noise-absorbing path is utilized for absorbing middle-frequency noise, the second noise-absorbing path is utilized for absorbing high-frequency noise, and the third noise-absorbing path is utilized for absorbing low-frequency noise. 
     
     
       6. The semiconductor device as claimed in  claim 3 , wherein the first noise-absorbing path and the second noise-absorbing path are mainly arranged in different layers below the ground pad, and the third noise-absorbing path is mainly arranged within the ground pad. 
     
     
       7. The semiconductor device as claimed in  claim 1 , wherein the seal ring encircles the noise-absorbing circuit and a main circuit which comprises a noisy circuit and a noise-sensitive circuit, and the noise-absorbing circuit is arranged near the noise-sensitive circuit. 
     
     
       8. The semiconductor device as claimed in  claim 7 , wherein an assembly isolation region is arranged between the main circuit and the seal ring, and another portion of the at least one capacitor and the at least one inductor which are not arranged below the ground pad are arranged on the assembly isolation region. 
     
     
       9. The semiconductor device as claimed in  claim 1 , wherein the ground pad is completely encircled by the seal ring in a plan view. 
     
     
       10. A semiconductor device, comprising:
 a ground pad; 
 a seal ring, encircling the ground pad; and 
 
       a noise-absorbing circuit electrically connected between the seal ring and the ground pad, wherein the noise-absorbing circuit comprises at least one capacitor and at least one inductor directly below the ground pad to form a first noise-absorbing path, a second noise-absorbing path and a third noise-absorbing path. 
     
     
       11. The semiconductor device as claimed in  claim 10 , wherein the at least one capacitor comprises a first capacitor and a second capacitor, the at least one inductor comprises a first inductor, the first capacitor and the first inductor are connected in series to form the first noise-absorbing path of the noise-absorbing circuit, and the second capacitor forms the second noise-absorbing path of the noise-absorbing circuit. 
     
     
       12. The semiconductor device as claimed in  claim 11 , wherein the third noise-absorbing path is electrically short between the ground pad and the seal ring. 
     
     
       13. The semiconductor device as claimed in  claim 12 , wherein the first noise-absorbing path, the second noise-absorbing path and the third noise-absorbing path are arranged in parallel. 
     
     
       14. The semiconductor device as claimed in  claim 12 , wherein the first noise-absorbing path is utilized for absorbing middle-frequency noise, the second noise-absorbing path is utilized for absorbing high-frequency noise, and the third noise-absorbing path is utilized for absorbing low-frequency noise. 
     
     
       15. The semiconductor device as claimed in  claim 12 , wherein the first noise-absorbing path and the second noise-absorbing path are mainly arranged in different layers below the ground pad, and the third noise-absorbing path is mainly arranged within the ground pad. 
     
     
       16. The semiconductor device as claimed in  claim 10 , wherein the seal ring encircles the noise-absorbing circuit and a main circuit which comprises a noisy circuit and a noise-sensitive circuit, and the noise-absorbing circuit is arranged near the noise-sensitive circuit. 
     
     
       17. The semiconductor device as claimed in  claim 16 , wherein an assembly isolation region is arranged between the main circuit and the seal ring, and another portion of the at least one capacitor and the at least one inductor which are not arranged below the ground pad are arranged on the assembly isolation region. 
     
     
       18. A semiconductor system, comprising:
 a ground pad; 
 a main circuit; 
 a seal ring, encircling the main circuit and the ground pad; and 
 a noise-absorbing circuit electrically connected between the seal ring and the ground pad, wherein the noise-absorbing circuit comprises at least one capacitor and at least one inductor, and the ground pad covers the at least one capacitor and at least one inductor. 
 
     
     
       19. The semiconductor system as claimed in  claim 18 , wherein the at least one capacitor comprises a first capacitor and a second capacitor, the at least one inductor comprises a first inductor, the first capacitor and the first inductor are connected in series to form a first noise-absorbing path of the noise-absorbing circuit, the second capacitor forms a second noise-absorbing path of the noise-absorbing circuit, and a third noise-absorbing path is electrically short between the ground pad and the seal ring. 
     
     
       20. The semiconductor system as claimed in  claim 18 , wherein an assembly isolation region is arranged between the main circuit and the seal ring, and another portion of the at least one capacitor and the at least one inductor which are not arranged below the ground pad are arranged on the assembly isolation region.