Method of forming metal film

Abstract

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

The invention claimed is: 
     
       1. A method of forming a metal film on a base, comprising:
 an atomization step of atomizing a raw-material solution into a mist, in which the raw-material solution is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, an amine compound, or a protonic acid; 
 a carrier-gas supply step of supplying a carrier gas to the mist; 
 a mist supply step of supplying the mist onto the base using the carrier gas; and 
 a metal-film formation step of forming the metal film on part or all of a surface of the base by causing the mist to thermally react, wherein the metal film consists of one or more metals, 
 wherein the thermal reaction is carried out under normal pressure or atmospheric pressure, 
 the thermal reaction is not carried out in an oxidizing atmosphere, and 
 the thermal reaction is not carried out with a plasma. 
 
     
     
       2. The method of  claim 1 , wherein the organic solvent contains the oxidant. 
     
     
       3. The method of  claim 2 , wherein a volume ratio between the oxidant and the organic solvent ranges from 1:99 to 50:50. 
     
     
       4. The method of  claim 2 , wherein the oxidant is water or hydrogen peroxide. 
     
     
       5. The method of  claim 1 , wherein the organic solvent contains the amine compound. 
     
     
       6. The method of  claim 5 , wherein the amine compound is diamine. 
     
     
       7. The method of  claim 1 , wherein the organic solvent contains the protonic acid. 
     
     
       8. The method of  claim 7 , wherein the protonic acid is a halide acid. 
     
     
       9. The method of  claim 1 , wherein the thermal reaction is carried out at a temperature of 200° C. to 650° C. 
     
     
       10. The method of  claim 1 , wherein the thermal reaction is carried out in an atmosphere of an inert gas or a reducing gas. 
     
     
       11. The method of  claim 1 , wherein the one or more metals are selected from gold (Au), silver (Ag), platinum (Pt), copper (Cu), iron (Fe), manganese (Mn), nickel (Ni), palladium (Pd), cobalt (Co), rhodium (Rh), ruthenium(Ru), chromium (Cr), molybdenum (Mo), tungsten (W), and aluminum (Al). 
     
     
       12. The method of  claim 1 , wherein the organic solvent is an alcohol. 
     
     
       13. The method of  claim 1 , wherein the raw-material solution is a mixed solution of an organic solvent containing the oxidant, the amine compound, or the protonic acid and a metal complex solution containing the metal or a metal salt solution containing the metal. 
     
     
       14. A metal film formed using the method of  claim 1 . 
     
     
       15. The metal film of  claim 14 , wherein the metal film is an electrode. 
     
     
       16. A semiconductor device comprising the metal film of  claim 15  as an electrode, further comprising at least a semiconductor layer. 
     
     
       17. The method of  claim 2 , wherein a volume ratio between the oxidant and organic solvent ranges from 1:99 to 40:60. 
     
     
       18. The method of  claim 1 , the metal film formation step forms the metal film with a thickness of 10 μm or more.