Method of manufacturing light emitting device

Abstract

A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary.

What is claimed is: 
     
       1. A method of manufacturing a light emitting device comprising:
 providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view; 
 forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary; 
 forming a support member on the separation layer; 
 removing the substrate; 
 forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member; and 
 removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary. 
 
     
     
       2. The method of manufacturing a light emitting device according to  claim 1 , wherein the step of removing the wavelength conversion layer further comprises attaching an adhesive sheet to a surface of the wavelength conversion layer which is at an opposite side of a surface in contact with the semiconductor stacked-layer body, and peeling the adhesive sheet to remove the wavelength conversion layer located at the outer peripheral region. 
     
     
       3. The method of manufacturing a light emitting device according to  claim 2 , wherein an adhesion between the support member and the separation layer is smaller than an adhesion between the separation layer and the wavelength conversion layer, and in the step of removing the wavelength conversion layer, peeling occurs at an interface between the separation layer and the support member to remove the wavelength conversion layer located at the outer peripheral region. 
     
     
       4. The method of manufacturing a light emitting device according to  claim 3 , wherein the support member is made of a resin, and the separation layer includes a layer being in contact with the support member at the outer peripheral region, the layer being made of one of Au and a platinum metal. 
     
     
       5. The method of manufacturing a light emitting device according to  claim 4 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       6. The method of manufacturing a light emitting device according to  claim 2 , wherein the support member is made of a resin, and the separation layer includes a layer being in contact with the support member at the outer peripheral region, the layer being made of one of Au and a platinum metal. 
     
     
       7. The method of manufacturing a light emitting device according to  claim 6 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       8. The method of manufacturing a light emitting device according to  claim 2 , wherein an adhesion between the separation layer and the wavelength conversion layer is smaller than an adhesion between the support member and the separation layer, and in the step of removing the wavelength conversion layer, the wavelength conversion layer located at the outer peripheral region is removed by peeling at an interface between the separation layer and the wavelength conversion layer. 
     
     
       9. The method of manufacturing a light emitting device according to  claim 8 , wherein the support member is made of a resin, and the separation layer includes a first layer being in contact with the wavelength conversion layer at the outer peripheral region, the first layer being made of Nb 2 O 5 , the separation layer further including a second layer being in contact with the support member at the outer peripheral region, the second layer being made of one of Ni, Ti, Al and an alloy whose main component is Al. 
     
     
       10. The method of manufacturing a light emitting device according to  claim 9 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       11. The method of manufacturing a light emitting device according to  claim 2 , wherein the support member is made of a resin, and the separation layer includes a first layer being in contact with the wavelength conversion layer at the outer peripheral region, the first layer being made of Nb 2 O 5 , the separation layer further including a second layer being in contact with the support member at the outer peripheral region, the second layer being made of one of Ni, Ti, Al and an alloy whose main component is Al. 
     
     
       12. The method of manufacturing a light emitting device according to  claim 11 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       13. The method of manufacturing a light emitting device according to  claim 2 , wherein in the step of forming the separation layer, the separation layer is formed by stacking an oxide layer and a metal layer in order from the upper surface side of the substrate, wherein an adhesion between the metal layer and the oxide layer is smaller than an adhesion between the support member and the metal layer and an adhesion between the oxide layer and the wavelength conversion layer, and in the step of removing the wavelength conversion layer, the wavelength conversion layer located at the outer peripheral region is removed by peeling at an interface between the oxide layer and the metal layer. 
     
     
       14. The method of manufacturing a light emitting device according to  claim 13 , wherein the support member is made of a resin, the oxide layer includes a layer being in contact with the metal layer at the outer peripheral region, the layer being made of indium tin oxide, and the metal layer includes a first layer being in contact with the support member at the outer peripheral region, the first layer being made of one of Ni, Ti, Al and an alloy whose main component is Al, the metal layer further including a second layer being in contact with the oxide layer at the outer peripheral region, the second layer being made of one of Al and an alloy whose main component is Al. 
     
     
       15. The method of manufacturing a light emitting device according to  claim 14 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       16. The method of manufacturing a light emitting device according to  claim 2 , wherein in the step of removing the substrate, the substrate is removed using a laser lift-off method. 
     
     
       17. The method of manufacturing a light emitting device according to  claim 2 , wherein in the step of removing the wavelength conversion layer, the wavelength conversion layer is removed such that a side surface of the semiconductor stacked-layer body and a side surface of the wavelength conversion layer are substantially flush with each other. 
     
     
       18. The method of manufacturing a light emitting device according to  claim 1 , wherein the support member is made of a resin, the resin of the support member and the resin of the wavelength conversion layer are each selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenolic resin, an acrylate resin, a urethane resin, a fluororesin, and a hybrid resin containing at least one of those resins. 
     
     
       19. The method of manufacturing a light emitting device according to  claim 1 , wherein in the step of removing the substrate, the substrate is removed using a laser lift-off method. 
     
     
       20. The method of manufacturing a light emitting device according to  claim 1 , wherein in the step of removing the wavelength conversion layer, the wavelength conversion layer is removed such that a side surface of the semiconductor stacked-layer body and a side surface of the wavelength conversion layer are substantially flush with each other.