Semiconductor device and display device

Abstract

This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a semiconductor film made of an oxide semiconductor film and having a channel region; 
 a drain electrode attached to the semiconductor film at one side of the channel region, the drain electrode being extended in a first direction in a plan view; 
 a first inorganic insulating film formed on the semiconductor film so as to cover the channel region; 
 a first organic insulating film formed on the first insulating film and having a portion overlapping the channel region; and 
 a group of inorganic films, having:
 a first electrode made of an inorganic conductive film and formed on the first organic insulating film so as to have a portion overlapping the channel region, 
 a second inorganic insulating film formed on the first electrode and having a portion overlapping the channel region; and 
 a second electrode made of an inorganic conductive film and formed on the second inorganic insulating film so as to have a portion overlapping the channel region, the second electrode being connected to the drain electrode via a contact hole that penetrates through the first inorganic insulating film, the first organic insulating film, and the second inorganic insulating film in a location that does not overlap the channel region, 
 
 wherein the first electrode has a closed-patterned opening in the location that does not overlap the channel region, the closed-patterned opening entirely surrounding and containing therewithin said contact hole in the plan view so that all edges of the contact hole are entirely inside the closed-patterned opening of the first electrode in the plan view, 
 wherein in the plan view, an edge of the closed-patterned opening of the first electrode traverses an entire width of the drain electrode in a direction that crosses the first direction, and an edge of the drain electrode opposite to the channel region is entirely inside the closed-patterned opening of the first electrode, and 
 wherein the group of inorganic films and the first inorganic insulating film sandwiches the first organic insulating film. 
 
     
     
       2. The semiconductor device according to  claim 1 , further comprising:
 a substrate; 
 a third electrode formed on the substrate; and 
 a third electrode side insulating film formed on the substrate so as to cover the third electrode, 
 wherein the semiconductor film is formed on the third electrode side insulating film. 
 
     
     
       3. The semiconductor device according to  claim 2 , wherein the semiconductor film is formed on the third electrode side insulating film so as to overlap the third electrode. 
     
     
       4. The semiconductor device according to  claim 2 , wherein the third electrode side insulating film has a multilayer structure having a bottom layer third electrode side insulating film formed of silicon nitride and a top layer third electrode side insulating film formed of silicon oxide disposed between the bottom layer third electrode side insulating film and the semiconductor film. 
     
     
       5. The semiconductor device according to  claim 1 , further comprising:
 a protective film disposed between the semiconductor film and the first inorganic insulating film so as to cover the channel region, 
 wherein the protective film is formed of silicon oxide. 
 
     
     
       6. The semiconductor device according to  claim 5 , further comprising:
 a source electrode in direct contact with a surface of the semiconductor film opposite to the drain electrode, said source and drain electrodes facing each other across the channel region therebelow, 
 wherein the protective film is formed so as to cover a portion of a surface of the semiconductor film that is not in contact with the source and drain electrodes. 
 
     
     
       7. The semiconductor device according to  claim 1 , wherein the semiconductor film is formed of an oxide including at least one element selected from a group comprising indium (In), gallium (Ga), aluminum (Al), copper (Cu), zinc (Zn), and tin (Sn). 
     
     
       8. The semiconductor device according to  claim 1 , wherein the semiconductor film is formed of indium gallium zinc oxide. 
     
     
       9. A display device, comprising: the semiconductor device according to  claim 1 , an opposite substrate facing the semiconductor device, and a liquid crystal layer disposed between the semiconductor device and the opposite substrate. 
     
     
       10. A semiconductor device, comprising:
 a semiconductor film made of an oxide semiconductor film and having a channel region; 
 a drain electrode attached to the semiconductor film at one side of the channel region, the drain electrode being extended in a first direction in a plan view; 
 a first inorganic insulating film formed on the semiconductor film so as to cover the channel region; 
 a first organic insulating film formed on the first inorganic insulating film and having a portion overlapping the channel region; 
 a first electrode made of an inorganic conductive film and formed on the first organic insulating film so as to have a portion overlapping the channel region, 
 a second organic insulating film formed on the first electrode and having a portion overlapping the channel region; and 
 a second electrode made of an inorganic conductive film and formed on the second organic insulating film so as to have a portion overlapping the channel region, the second electrode being connected to the drain electrode via a contact hole that penetrates through the first inorganic insulating film, the first organic insulating film, and the second organic insulating film in a location that does not overlap the channel region, 
 wherein the first electrode has a closed-patterned opening in the location that does not overlap the channel region, the closed-patterned opening entirely surrounding and containing therewithin said contact hole in the plan view so that all edges of the contact hole are entirely inside the closed-patterned opening of the first electrode in the plan view, and 
 wherein in the plan view, an edge of the closed-patterned opening of the first electrode traverses an entire width of the drain electrode in a direction that crosses the first direction, and an edge of the drain electrode opposite to the channel region is entirely inside the closed-patterned opening of the first electrode. 
 
     
     
       11. The semiconductor device according to  claim 10 , wherein the second organic insulating film is formed of a coating-type organic insulating material. 
     
     
       12. The semiconductor device according to  claim 10 , further comprising:
 a substrate; 
 a third electrode formed on the substrate; and 
 a third electrode side insulating film formed on the substrate so as to cover the third electrode, 
 wherein the semiconductor film is formed on the third electrode side insulating film. 
 
     
     
       13. The semiconductor device according to  claim 10 , further comprising:
 a protective film disposed between the semiconductor film and the first inorganic insulating film so as to cover the channel region. 
 
     
     
       14. The semiconductor device according to  claim 10 , wherein the semiconductor film is formed of an oxide including at least one element selected from a group comprising indium (In), gallium (Ga), aluminum (Al), copper (Cu), zinc (Zn), and tin (Sn). 
     
     
       15. The semiconductor device according to  claim 10 , wherein the semiconductor film is formed of indium gallium zinc oxide. 
     
     
       16. A display device, comprising: the semiconductor device according to  claim 10 , an opposite substrate facing the semiconductor device, and a liquid crystal layer disposed between the semiconductor device and the opposite substrate. 
     
     
       17. A semiconductor device, comprising:
 a semiconductor film made of an oxide semiconductor film and having a channel region; 
 a drain electrode attached to the semiconductor film at one side of the channel region; 
 a first inorganic insulating film formed on the semiconductor film so as to cover the channel region; 
 a first organic insulating film formed on the first insulating film and having a portion overlapping the channel region; and 
 a group of inorganic films, having:
 a first electrode made of an inorganic conductive film and formed on the first organic insulating film so as to have a portion overlapping the channel region, 
 a second inorganic insulating film formed on the first electrode and having a portion overlapping the channel region; and 
 a second electrode made of an inorganic conductive film and formed on the second inorganic insulating film so as to have a portion overlapping the channel region, the second electrode being connected to the drain electrode via a contact hole that penetrates through the first inorganic insulating film, the first organic insulating film, and the second inorganic insulating film in a location that does not overlap the channel region, 
 
 wherein the first electrode has a closed-patterned opening in the location that does not overlap the channel region, and 
 wherein the closed-patterned opening of the first electrode has a substantially rectangular shape and only one of sides of the closed-patterned opening overlaps the drain electrode in the plan view, and 
 wherein the group of inorganic films and the first inorganic insulating film sandwiches the first organic insulating film. 
 
     
     
       18. A display device, comprising: the semiconductor device according to  claim 17 , an opposite substrate facing the semiconductor device, and a liquid crystal layer disposed between the semiconductor device and the opposite substrate.