P
US9859353B2ExpiredUtilityPatentIndex 73

Semiconductor device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Jun 5, 2002Filed: Mar 18, 2016Granted: Jan 2, 2018
Est. expiryJun 5, 2022(expired)· nominal 20-yr term from priority
Inventors:YAMAZAKI SHUNPEIHAYAKAWA MASAHIKOTANADA YOSHIFUMIOSAME MITSUAKIANZAI AYAFUKUMOTO RYOTA
G09G 3/3233G09G 2330/04G09G 2310/0251H01L 27/1214H01L 27/1222H01L 27/3262H01L 27/3276H01L 27/3248H01L 27/3265H01L 27/0248H01L 29/78675H01L 27/12H10D 86/40H10D 89/60H10D 86/481H10D 86/421H10D 86/60H10D 86/00H10D 30/6745H10D 30/6731H10K 59/1216H10K 59/1213H10K 59/131H10K 59/123
73
PatentIndex Score
2
Cited by
81
References
20
Claims

Abstract

Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A pixel circuit implementing a circuit diagram comprising:
 a first transistor, a second transistor and a capacitor element, 
 wherein the first transistor includes:
 a semiconductor layer; and 
 a gate electrode, 
 
 wherein the semiconductor layer includes a curved region in a top view of the pixel circuit, 
 wherein an entire part of the curved region of the semiconductor layer and at least a part of the gate electrode of the first transistor overlap each other, 
 wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the second transistor, and 
 wherein, in the circuit diagram, a first terminal of the capacitor element is directly connected to the gate electrode of the first transistor. 
 
     
     
       2. The pixel circuit implementing the circuit diagram according to  claim 1 , further comprising:
 a third transistor, a first line, a second line, a third line, and a light-emitting element, 
 wherein the first transistor includes an insulating layer over the semiconductor layer, 
 wherein, in the circuit diagram, a first terminal of the first transistor is electrically connected to the first line, 
 wherein, in the circuit diagram, a second terminal of the first transistor is electrically connected to the light-emitting element, 
 wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the third transistor, 
 wherein, in the circuit diagram, a gate electrode of the second transistor is directly connected to the second line, and 
 wherein, in the circuit diagram, a gate electrode of the third transistor is directly connected to the third line. 
 
     
     
       3. The pixel circuit implementing the circuit diagram according to  claim 2 , further comprising a fourth line, wherein, in the circuit diagram, a second terminal of the second transistor is electrically connected to the fourth line. 
     
     
       4. The pixel circuit implementing the circuit diagram according to  claim 2 , wherein, in the circuit diagram, a second terminal of the third transistor is electrically connected to the first line. 
     
     
       5. The pixel circuit implementing the circuit diagram according to  claim 2 ,
 wherein, in the circuit diagram, the first terminal of the first transistor is directly connected to the first line, and 
 wherein, in the circuit diagram, the second terminal of the first transistor is directly connected to the light-emitting element. 
 
     
     
       6. The pixel circuit implementing the circuit diagram according to  claim 2 , further comprising a resistor,
 wherein, in the circuit diagram, a first terminal of the resistor is electrically connected to the second terminal of the first transistor, and 
 wherein, in the circuit diagram, a second terminal of the resistor is electrically connected to the light-emitting element. 
 
     
     
       7. The pixel circuit implementing the circuit diagram according to  claim 1 , wherein the semiconductor layer comprises polysilicon. 
     
     
       8. A module comprising a flexible print circuit and the pixel circuit implementing the circuit diagram according to  claim 1 . 
     
     
       9. An electronic device comprising:
 the module according to  claim 8 ; and 
 at least one of an antenna, a speaker, and a battery. 
 
     
     
       10. A pixel circuit implementing a circuit diagram comprising:
 a first transistor, a second transistor and a capacitor element, 
 wherein the first transistor includes:
 a semiconductor layer; and 
 a gate electrode, 
 
 wherein the semiconductor layer includes a curved region in a top view of the pixel circuit, 
 wherein an entire part of the curved region of the semiconductor layer and at least a part of the gate electrode of the first transistor overlap each other, 
 wherein a channel length of the first transistor is larger than a channel length of the second transistor, 
 wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the second transistor, 
 wherein, in the circuit diagram, a first terminal of the capacitor element is directly connected to the gate electrode of the first transistor, 
 wherein each of the first transistor, the second transistor and the capacitor element is over a laminate film including a first layer and a second layer, 
 wherein the first layer includes nitrogen and silicon, and 
 wherein the second layer includes oxygen and silicon. 
 
     
     
       11. The pixel circuit implementing the circuit diagram according to  claim 10 , further comprising:
 a third transistor, a first line, a second line, a third line, and a light-emitting element, 
 wherein the first transistor includes an insulating layer over the semiconductor layer, 
 wherein, in the circuit diagram, a first terminal of the first transistor is electrically connected to the first line, 
 wherein, in the circuit diagram, a second terminal of the first transistor is electrically connected to the light-emitting element, 
 wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the third transistor, 
 wherein, in the circuit diagram, a gate electrode of the second transistor is directly connected to the second line, 
 wherein, in the circuit diagram, a gate electrode of the third transistor is directly connected to the third line, and 
 wherein the first line is a power supply line. 
 
     
     
       12. The pixel circuit implementing the circuit diagram according to  claim 11 , further comprising a fourth line, wherein, in the circuit diagram, a second terminal of the second transistor is electrically connected to the fourth line. 
     
     
       13. The pixel circuit implementing the circuit diagram according to  claim 11 , wherein, in the circuit diagram, a second terminal of the third transistor is electrically connected to the first line. 
     
     
       14. The pixel circuit implementing the circuit diagram according to  claim 11 ,
 wherein, in the circuit diagram, the first terminal of the first transistor is directly connected to the first line, and 
 wherein, in the circuit diagram, the second terminal of the first transistor is directly connected to the light-emitting element. 
 
     
     
       15. The pixel circuit implementing the circuit diagram according to  claim 11 , further comprising a resistor,
 wherein, in the circuit diagram, a first terminal of the resistor is electrically connected to the second terminal of the first transistor, and 
 wherein, in the circuit diagram, a second terminal of the resistor is electrically connected to the light-emitting element. 
 
     
     
       16. The pixel circuit implementing the circuit diagram according to  claim 11 , wherein, in the circuit diagram, a second terminal of the capacitor element is directly connected to the light-emitting element. 
     
     
       17. The pixel circuit implementing the circuit diagram according to  claim 10 , wherein the semiconductor layer comprises polysilicon. 
     
     
       18. A module comprising a flexible print circuit and the pixel circuit implementing the circuit diagram according to  claim 10 . 
     
     
       19. An electronic device comprising:
 the module according to  claim 18 ; and 
 at least one of an antenna, a speaker, and a battery. 
 
     
     
       20. The pixel circuit implementing the circuit diagram according to  claim 10 ,
 wherein the first layer is a silicon nitride oxide layer, and 
 wherein the second layer is a silicon oxynitride layer.

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