Guard ring structure of semiconductor arrangement

Abstract

Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

What is claimed is: 
     
       1. A method for forming a guard ring structure, comprising:
 forming a first doped material layer around at least a portion of a device of a semiconductor arrangement, wherein the first doped material layer defines a first guard ring; 
 forming a first poly layer over the first guard ring, wherein the first poly layer comprises a first poly layer portion in contact with the first guard ring and a second poly layer portion in contact with the first guard ring and spaced apart from and discontinuous from the first poly layer portion; and 
 forming a metal layer over the first poly layer, wherein the metal layer comprises a metal layer portion coupling the first poly layer portion to the second poly layer portion. 
 
     
     
       2. The method of  claim 1 , wherein the first doped material layer forms a closed loop around the device. 
     
     
       3. The method of  claim 1 , wherein the first doped material layer comprises a plurality of discontinuous segments. 
     
     
       4. The method of  claim 3 , wherein the first poly layer portion is in contact with a first segment of the plurality of discontinuous segments and a second segment of the plurality of discontinuous segments. 
     
     
       5. The method of  claim 1 , comprising forming a second doped material layer around at least a portion of the first doped material layer, the second doped material layer defining a second guard ring. 
     
     
       6. The method of  claim 5 , wherein the first poly layer portion is in contact with the first guard ring and the second guard ring. 
     
     
       7. The method of  claim 5 , wherein the first doped material layer comprises a first dopant type and the second doped material layer comprises a second dopant type different than the first dopant type. 
     
     
       8. The method of  claim 1 , wherein a longest dimension of the first poly layer portion is parallel to a longest dimension of the second poly layer portion. 
     
     
       9. The method of  claim 1 , wherein a longest dimension of the first poly layer portion extends in a first direction and a longest dimension of the metal layer portion extends in a second direction different than the first direction. 
     
     
       10. The method of  claim 9 , wherein the first direction is perpendicular to the second direction. 
     
     
       11. The method of  claim 1 , wherein:
 the first doped material layer comprises a plurality of discontinuous segments, and 
 the method comprises forming a metal one layer to couple a first segment of the plurality of discontinuous segments to a second segment of the plurality of discontinuous segments. 
 
     
     
       12. The method of  claim 11 , wherein a longest dimension of the first poly layer portion is parallel to a longest dimension of the metal one layer. 
     
     
       13. The method of  claim 1 , comprising:
 forming a metal one layer, wherein the metal one layer comprises a first metal one layer portion and a second metal one layer portion spaced apart from and discontinuous from the first metal one layer portion. 
 
     
     
       14. The method of  claim 13 , wherein the metal layer couples the first metal one layer portion to the second metal one layer portion. 
     
     
       15. A method for forming a guard ring structure, comprising:
 forming a first doped material layer around at least a portion of a device of a semiconductor arrangement, wherein the first doped material layer defines a first guard ring; 
 forming a first poly layer over the first guard ring; 
 forming a metal layer over the first poly layer; and 
 forming a metal one layer over the metal layer, wherein:
 the metal one layer comprises a first metal one layer portion overlying the first guard ring and a second metal one layer portion overlying the first guard ring, 
 the first metal one layer portion is spaced apart from and discontinuous from the second metal one layer portion, and 
 the metal layer couples the first metal one layer portion to the second metal one layer portion. 
 
 
     
     
       16. The method of  claim 15 , wherein:
 the first doped material layer comprises a plurality of discontinuous segments, and 
 the first metal one layer portion overlies a first segment of the plurality of discontinuous segments and a second segment of the plurality of discontinuous segments. 
 
     
     
       17. The method of  claim 15 , wherein:
 the first poly layer comprises a first poly layer portion in contact with the first guard ring and a second poly layer portion in contact with the first guard ring and spaced apart from and discontinuous from the first poly layer portion. 
 
     
     
       18. The method of  claim 17 , wherein the metal layer couples the first poly layer portion to the second poly layer portion. 
     
     
       19. A method for forming a guard ring structure, comprising:
 forming a first doped material layer around at least a portion of a device of a semiconductor arrangement, wherein:
 the first doped material layer comprises a plurality of discontinuous segments, and 
 the plurality of discontinuous segments define a first guard ring; 
 
 forming a first poly layer over the first guard ring, wherein the first poly layer comprises a first poly layer portion overlying the first guard ring and extending in a first direction; and 
 forming a metal layer over the first poly layer, wherein the metal layer comprises a first metal layer portion extending in a second direction different than the first direction. 
 
     
     
       20. The method of  claim 19 , wherein the first poly layer portion is in contact with a first segment of the plurality of discontinuous segments and a second segment of the plurality of discontinuous segments.