US9954175B2ActiveUtilityPatentIndex 51
Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
Est. expiryNov 22, 2031(~5.4 yrs left)· nominal 20-yr term from priority
C01B 32/186B82Y 10/00C01B 32/192B82Y 40/00Y10S977/75Y10S977/938B82Y 30/00H01B 1/04C01B 2204/00Y10S977/742Y10T428/30C01B 2202/00H10P 14/3406H01L 51/0545H01L 51/0025C23C 16/26H01L 29/0673H01L 29/66742H01L 51/102C01B 32/158H01L 29/78618H01L 51/0566H01L 29/1606H01L 29/78696H01L 51/105H01L 29/78684H01L 51/0562C01B 32/182H01L 29/778H01L 51/0048H10K 85/221H10D 62/121H10D 62/882H10D 30/6757H10D 30/6741H10D 30/6713H10D 30/47H10D 30/031H10D 62/221H10F 77/244H10H 20/833H10K 10/484H10K 10/462H10K 85/20H10K 10/466H10K 10/488H10K 10/82H10K 10/84H10K 71/311H10K 10/486
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Claims
Abstract
A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A field effect transistor with a carbon nanotube-graphene hybrid nano-component, comprising:
a gate;
a gate dielectric formed on the gate;
a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric, wherein the carbon nanotube-graphene hybrid nano-component comprises:
a quartz substrate;
nanotube film deposited over the substrate to produce a layer of nanotube film, wherein the nanotube film comprises fullerene molecules;
a self-assembled monolayer of amine terminated groups positioned between the quartz substrate and the nanotube film, thereby increasing nanotube adhesion on the quartz substrate; and
graphene deposited over the layer of nanotube film, wherein the graphene comprises solution-suspended graphene oxide flakes doped with nitric acid;
a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and
a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.
2. The field effect transistor of claim 1 , wherein the nanotube film comprises multi-wall nanotube.
3. The field effect transistor of claim 1 , wherein the nanotube film comprises a network of single wall carbon nanotubes.
4. The field effect transistor of claim 1 , wherein the carbon nanotube-graphene hybrid nano-component comprises a desired transparency.
5. The field effect transistor of claim 1 , wherein the layer of nanotube film comprises a layer of nanotube film removed of impurities from a surface thereof.
6. The field effect transistor of claim 1 , wherein the carbon nanotube-graphene hybrid nano-component comprises a carbon nanotube-graphene hybrid nano-component removed of impurities from a surface thereof.Cited by (0)
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