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US9972741B2ActiveUtilityPatentIndex 47

Methods of forming thin-film photovoltaic devices with discontinuous passivation layers

Assignee: BECK MARKUS EBERHARDPriority: Sep 23, 2013Filed: Jul 21, 2017Granted: May 15, 2018
Est. expirySep 23, 2033(~7.2 yrs left)· nominal 20-yr term from priority
Inventors:BECK MARKUS EBERHARDNAGLE TIMOTHY JBASU SOURAV ROGER
H01L 31/02167H01L 31/1884Y02E10/52H01L 31/068H01L 31/1868H01L 31/022441H01L 31/0322Y02E10/541H01L 31/02008H01L 31/056H01L 31/0749H01L 31/02327H01L 31/022425H10F 77/935H10F 77/413H10F 77/311H10F 77/219H10F 77/211H10F 77/126H10F 77/48H10F 71/138H10F 10/167H10F 10/14H10F 71/129Y02E10/547
47
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Cited by
43
References
40
Claims

Abstract

In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A photovoltaic device configured for top illumination by solar energy, the photovoltaic device comprising:
 a back contact layer comprising a conductive material; 
 a discontinuous back reflector disposed over the back contact layer; 
 a thin-film absorber layer disposed over an in electrical contact with the back contact layer, the thin-film absorber layer (i) having a doping polarity and (ii) comprising CdTe, chalcopyrite, or kesterite, wherein (a) the thin-film absorber layer makes direct electrical contact to the back contact layer through discontinuities in the discontinuous back reflector, and (b) the discontinuous back reflector is positioned to reflect solar energy passing through the thin-film absorber layer back through the thin-film absorber layer in a direction away from the back contact layer; 
 a partner layer disposed over an entirety of the thin-film absorber layer, and being in electrical contact with the thin-film absorber layer, the partner layer having a doping polarity opposite that of the thin-film absorber layer; 
 a front contact layer disposed over only a top surface of the partner layer and being in electrical contact with the partner layer, the front contact layer comprising a second conductive material; and 
 a discontinuous passivation layer disposed between the partner layer and the front contact layer, the front contact layer making electrical contact with the partner layer only through discontinuities in the discontinuous passivation layer, 
 wherein, between the discontinuities in the discontinuous passivation layer, the front contact layer extends, as a continuous layer, over an entirety of the discontinuous passivation layer. 
 
     
     
       2. The photovoltaic device of  claim 1 , wherein the front contact layer comprises a transparent conductive oxide. 
     
     
       3. The photovoltaic device of  claim 1 , further comprising a substrate disposed below the back contact layer. 
     
     
       4. The photovoltaic device of  claim 3 , wherein (i) the substrate is transparent and/or (ii) the substrate comprises glass. 
     
     
       5. The photovoltaic device of  claim 1 , further comprising a superstrate disposed over the front contact layer. 
     
     
       6. The photovoltaic device of  claim 5 , wherein (i) the superstrate is transparent and/or (ii) the superstrate comprises glass. 
     
     
       7. The photovoltaic device of  claim 1 , wherein the partner layer and the thin-film absorber layer comprise the same material. 
     
     
       8. The photovoltaic device of  claim 1 , wherein the discontinuous reflector layer comprises at least one of aluminum, silver, titanium dioxide, or zirconium nitride. 
     
     
       9. The photovoltaic device of  claim 1 , wherein the back contact layer comprises molybdenum. 
     
     
       10. The photovoltaic device of  claim 1 , wherein the back contact layer comprises a sodium-containing conductive material. 
     
     
       11. The photovoltaic device of  claim 10 , wherein the sodium-containing conductive material comprises at least one of Mo:NaF or Mo:Na 2 MoO 4 . 
     
     
       12. The photovoltaic device of  claim 1 , wherein the discontinuous back reflector is metallic. 
     
     
       13. The photovoltaic device of  claim 1 , wherein the discontinuous back reflector is non-metallic. 
     
     
       14. The photovoltaic device of  claim 1 , wherein the discontinuous back reflector is in direct mechanical contact with, but does not form an ohmic contact to, the thin-film absorber layer. 
     
     
       15. The photovoltaic device of  claim 3 , wherein the partner layer is disposed over an entirety of a top surface of the substrate. 
     
     
       16. The photovoltaic device of  claim 3 , wherein the substrate is not transparent. 
     
     
       17. The photovoltaic device of  claim 3 , wherein the back contact layer is disposed over an entirety of a top surface of the substrate. 
     
     
       18. The photovoltaic device of  claim 5 , wherein the partner layer is disposed beneath an entirety of a bottom surface of the superstrate. 
     
     
       19. The photovoltaic device of  claim 5 , wherein the back contact layer is disposed beneath an entirety of a bottom surface of the superstrate. 
     
     
       20. A photovoltaic device configured for top illumination by solar energy, the photovoltaic device comprising:
 a back contact layer comprising a conductive material; 
 a discontinuous back reflector disposed over the back contact layer; 
 a thin-film absorber layer disposed over an in electrical contact with the back contact layer, the thin-film absorber layer (i) having a doping polarity and (ii) comprising CdTe, chalcopyrite, or kesterite, wherein (a) the thin-film absorber layer makes direct electrical contact to the back contact layer through discontinuities in the discontinuous back reflector, and (b) the discontinuous back reflector is positioned to reflect solar energy passing through the thin-film absorber layer back through the thin-film absorber layer in a direction away from the back contact layer; 
 a partner layer disposed over an entirety of the thin-film absorber layer and being in electrical contact with the thin-film absorber layer, the partner layer having a doping polarity opposite that of the thin-film absorber layer; 
 a front contact layer disposed over and in electrical contact with the partner layer, the front contact layer (i) comprising a second conductive material and (ii) being disposed over only an entirety of a top surface of the partner layer; and 
 a discontinuous passivation layer disposed between the back contact layer and the thin-film absorber layer, the thin-film absorber layer making electrical contact with the back contact layer only through discontinuities in the discontinuous passivation layer. 
 
     
     
       21. The photovoltaic device of  claim 20 , wherein the front contact layer comprises a transparent conductive oxide. 
     
     
       22. The photovoltaic device of  claim 20 , further comprising a substrate disposed below the back contact layer. 
     
     
       23. The photovoltaic device of  claim 22 , wherein (i) the substrate is transparent and/or (ii) the substrate comprises glass. 
     
     
       24. The photovoltaic device of  claim 20 , further comprising a superstrate disposed over the front contact layer. 
     
     
       25. The photovoltaic device of  claim 24 , wherein (i) the superstrate is transparent and/or (ii) the superstrate comprises glass. 
     
     
       26. The photovoltaic device of  claim 20 , wherein the partner layer and the thin-film absorber layer comprise the same material. 
     
     
       27. The photovoltaic device of  claim 20 , wherein the discontinuous reflector layer comprises at least one of aluminum, silver, titanium dioxide, or zirconium nitride. 
     
     
       28. The photovoltaic device of  claim 20 , wherein the back contact layer comprises molybdenum. 
     
     
       29. The photovoltaic device of  claim 20 , wherein the back contact layer comprises a sodium-containing conductive material. 
     
     
       30. The photovoltaic device of  claim 29 , wherein the sodium-containing conductive material comprises at least one of Mo:NaF or Mo:Na 2 MoO 4 . 
     
     
       31. The photovoltaic device of  claim 20 , wherein the discontinuous back reflector is metallic. 
     
     
       32. The photovoltaic device of  claim 20 , wherein the discontinuous back reflector is non-metallic. 
     
     
       33. The photovoltaic device of  claim 20 , further comprising a sodium-containing layer disposed between the discontinuous passivation layer and the thin-film absorber layer. 
     
     
       34. The photovoltaic device of  claim 33 , wherein the sodium-containing layer comprises at least one of NaF or Na 2 Se. 
     
     
       35. The photovoltaic device of  claim 20 , wherein the discontinuous back reflector is in direct mechanical contact with, but does not form an ohmic contact to, the thin-film absorber layer. 
     
     
       36. The photovoltaic device of  claim 22 , wherein the partner layer is disposed over an entirety of a top surface of the substrate. 
     
     
       37. The photovoltaic device of  claim 22 , wherein the substrate is not transparent. 
     
     
       38. The photovoltaic device of  claim 22 , wherein the back contact layer is disposed over an entirety of a top surface of the substrate. 
     
     
       39. The photovoltaic device of  claim 24 , wherein the partner layer is disposed beneath an entirety of a bottom surface of the superstrate. 
     
     
       40. The photovoltaic device of  claim 24 , wherein the back contact layer is disposed beneath an entirety of a bottom surface of the superstrate.

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