MEMS-based method for manufacturing sensor

Abstract

An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel ( 120 ) and a support beam ( 140 ) on a front surface of a substrate ( 100 ); forming a first epitaxial layer ( 200 ) on the front surface of the substrate ( 100 ) to seal the shallow channel ( 120 ); forming a suspended mesh structure ( 160 ) below the first epitaxial layer ( 200 ); and forming a deep channel ( 180 ) at a position on a back surface of the substrate ( 100 ) corresponding to the shallow channel ( 120 ), so that the shallow channel ( 120 ) is in communication with the deep channel ( 180 ). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

What is claimed is: 
     
       1. A method of manufacturing a MEMS-based sensor, comprising the following steps:
 providing a substrate; 
 forming a shallow channel and a support beam on a front surface of the substrate; 
 forming a first epitaxial layer on the front surface of the substrate to seal the shallow channel; 
 forming a suspended meshed structure beneath the first epitaxial layer; 
 forming a second epitaxial layer on the first epitaxial layer; 
 forming a circuit layer on the second epitaxial layer; 
 forming a deep channel on a position of a back surface of the substrate corresponding to the shallow channel, such that the shallow channel is in communication with the deep channel; and 
 removing the support beam. 
 
     
     
       2. The method according to  claim 1 , wherein the shallow channel and the support beam are formed on the front surface of the substrate by etching technology. 
     
     
       3. The method according to  claim 1 , wherein the shallow channel has a depth ranging from 50 μm to 100 μm. 
     
     
       4. The method according to  claim 1 , wherein the first epitaxial layer has a thickness ranging from 5 μm to 10 μm. 
     
     
       5. The method according to  claim 1 , wherein the second epitaxial layer has a thickness ranging from 12 μm to 20 μm. 
     
     
       6. The method according to  claim 1 , wherein technologies for forming a circuit layer on the second epitaxial layer comprise photolithography, implantation, diffusion, and etching. 
     
     
       7. The method according to  claim 1 , wherein the deep channel is formed on the position of the back surface of the substrate corresponding to the shallow channel by etching technology. 
     
     
       8. The method according to  claim 1 , wherein the deep channel has a depth ranging from 300 μm to 400 μm. 
     
     
       9. The method according to  claim 1 , wherein the support beam is removed by performing an etching technology to support beam from the back surface of the substrate. 
     
     
       10. The method according to  claim 1 , wherein a number of the support beams is four.