Silicon article inspection systems and methods

Abstract

A method of inspecting a silicon article includes irradiating a silicon article with infrared radiation, transmitting a portion of the infrared radiation through the silicon article, and filtering the infrared radiation transmitted through the silicon article. Image data is acquired from the filtered infrared radiation and an image of the silicon article reconstructed from the image data. Based on the reconstructed image of the silicon article, one or more anomalies defined within the silicon article are identified.

What is claimed is: 
     
       1. A method of inspecting a silicon article, comprising:
 irradiating a silicon article with infrared radiation, wherein the silicon article is a silicon wafer; 
 transmitting a portion of the infrared radiation through the silicon article; 
 filtering the infrared radiation transmitted through the silicon article; 
 acquiring image data from the filtered infrared radiation; 
 constructing an image of the silicon article using the image data acquired from the filtered infrared radiation; and 
 identifying one or more anomalies defined within the silicon article from the reconstructed image, 
 wherein filtering the infrared radiation includes filtering the infrared radiation to within a radiation narrowband extending between 1190 nanometers and 1210 nanometers, 
 wherein identifying one or more anomalies defined within the silicon article comprises identifying one or more of a void, a surface connected crack, and an internal crack defined within the silicon article. 
 
     
     
       2. The method of inspecting a silicon article as recited in  claim 1 , wherein the silicon article comprises a bond interconnecting a first silicon layer with a second silicon article. 
     
     
       3. The method of inspecting a silicon article as recited in  claim 1 , further comprising irradiating an entirety of a surface of the silicon article using a halogen lamp. 
     
     
       4. The method of inspecting a silicon article as recited in  claim 1 , further comprising irradiating the silicon wafer with broadband radiation. 
     
     
       5. The method inspecting a silicon article as recited in  claim 4 , wherein the broadband radiation comprises visible radiation. 
     
     
       6. The method of inspecting a silicon article as recited in  claim 4 , wherein the broadband radiation comprises infrared radiation. 
     
     
       7. The method of inspecting a silicon article as recited in  claim 4 , wherein the broadband radiation comprises a radiation narrowband centered at 1200 nanometers. 
     
     
       8. The method of inspecting a silicon article as recited in  claim 1 , wherein filtering the transmitted radiation comprises removing wavelengths outside of the radiation narrowband centered at 1200 nanometers. 
     
     
       9. The method of inspecting a silicon article as recited in  claim 1 , wherein acquiring image data comprises receiving the filtered radiation at a broadband sensor array. 
     
     
       10. The method of inspecting a silicon article as recited in  claim 9 , wherein acquiring image data comprises measuring the filtered radiation within a wavelength band extending between about 800 nanometers and about 1700 nanometers. 
     
     
       11. The method of inspecting a silicon article as recited in  claim 1 , wherein reconstructing an image of the silicon article includes reconstructing an image including a notch of a silicon wafer. 
     
     
       12. The method as recited in  claim 1 , further comprising distinguishing between a void, a surface connected crack, and an internal crack defined within the silicon article. 
     
     
       13. A silicon article inspection apparatus, comprising:
 an illuminator arranged to illuminate a silicon article with broadband radiation; 
 a sensor array to generate image data from radiation emitted by the illuminator and transmitted by the silicon article; and 
 a filter disposed between the inspection location and the sensor array, the filter configured to allow narrowband radiation centered at about 1200 nanometers pass through the filter, 
 wherein the filter is opaque to incident radiation outside of a narrowband between 1190 nanometers and 1210 nanometers. 
 
     
     
       14. The silicon article inspection system as recited in  claim 13 , wherein the illuminator comprises a halogen lamp, and further comprising a manipulator arranged to insert and remove the silicon article from an inspection position defined between the illuminator and the sensor array. 
     
     
       15. The silicon article inspection system as recited in  claim 13 , the filter is configured to allow narrowband radiation including image data of one or more of a surface connected crack, an internal crack, and a void defined within a bulk silicon layer and a bond between a first silicon layer and a second silicon layer. 
     
     
       16. The silicon article inspection system as recited in  claim 13 , wherein the sensor array has high responsivity within a wavelength band extending between 900 nanometers and 1700 nanometers. 
     
     
       17. A silicon article inspection system, comprising:
 a silicon article inspection apparatus as recited in  claim 13 ; 
 a control module operatively connected to the silicon article inspection apparatus, wherein the control module is responsive to instructions recorded on a non-transitory machine-readable medium to:
 irradiate a silicon article with infrared radiation; 
 transmit a portion of the infrared radiation through the silicon article; 
 filter the infrared radiation transmitted through the silicon article; 
 acquire image data from the filtered infrared radiation; 
 construct an image of the silicon article using the image data acquired from the filtered infrared radiation; and 
 identify one or more anomalies defined within the silicon article from the reconstructed image.