USD827590SActiveUtility

Power semiconductor device

33
Assignee: MITSUBISHI ELECTRIC CORPPriority: Sep 30, 2015Filed: Mar 18, 2016Granted: Sep 4, 2018
Est. expirySep 30, 2035(~9.2 yrs left)· nominal 20-yr term from priority
Inventors:Yukimasa HayashidaShinichi IuraHitoshi UemuraDaisuke OyaKenji HatoriYasuhiro SakaiRyo TsudaRyutaro Date
33
PatentIndex Score
1
Cited by
7
References
1
Claims

Claims

exact text as granted — not AI-modified
CLAIM 
     
       The ornamental design for the power semiconductor device, as shown and described.

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