USH1443HExpiredUtilityPatentIndex 63
Optically activated multi-frequency high power RF generation utilizing a wafer-scale Si-GaAs substrate
Est. expiryJan 17, 2012(expired)· nominal 20-yr term from priority
H01Q 3/2676
63
PatentIndex Score
2
Cited by
9
References
3
Claims
Abstract
A device for radiating pulses of radio frequency energy in response to pulses of laser light in which a metal layer is ohmically bonded to one side of a substrate of semiconductor material and an antenna is ohmically bonded to the other side of the substrate, there being at least one aperture in the metal layer for permitting laser light to reach the disk.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method for providing a high power multi-frequency wafer-scale optically activated RF generated device from a silicon GaAs substrate, said method comprising the steps of: forming a first metallization layer on a top face of said substrate; forming at least one aperture through a central portion of said first metallization layer, for permitting light to pass through said one aperture to said substrate; forming a second metallization layer on a bottom surface of said substrate, said second metallization layer having a pattern for providing an antenna; forming the pattern of said antenna to both have a central portion opposing and aligned with said at least one aperture in said first metallization layer and a plurality of spaced apart groups of elements, projecting away from said central portion for respectively radiating different frequencies of radio frequency energy; and forming said elements to each have an arc shape for emitting a pattern of circularly polarized radio frequency waves when energized.
2. The method of claim 1, further including the step of: forming each of said groups of elements to have elements of differing lengths relative to other elements.
3. The method of claim 2, further including the step of: applying high voltage pulses across said first and second metallization layers, for a sufficient time to charge said substrate to a relatively high voltage; and periodically applying a pulsed laser beam to said at least one aperture in a manner for periodically discharging said substrate into said antenna, for radiating therefrom multi-frequency RF energy.Cited by (0)
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