P
USH1540HExpiredUtilityPatentIndex 61

Electrical components formed of lanthanide chalcogenides and method of preparation

Assignee: US ARMYPriority: Jun 30, 1993Filed: Jul 29, 1994Granted: Jun 4, 1996
Est. expiryJun 30, 2013(expired)· nominal 20-yr term from priority
Inventors:NOVINSON THOMAS
H10F 77/127C01B 19/001H01B 1/10H01B 1/06C01P 2002/77H01B 3/025C01P 2006/40
61
PatentIndex Score
3
Cited by
9
References
1
Claims

Abstract

Mixed metal chalcogenides formed of lanthanide chalcogenides having the formula MLnX2 where M is selected from the group consisting of Ag, Cu and Au; Ln is one of the elements of the lanthanide family other than Pm and X is selected from the group consisting of S, Se and Te and having electrical properties that range from dielectrics to semiconductors to metallic conductors in a temperature range from -50 DEG C. to in excess of +100 DEG C. The lanthanide chalcogenides can be prepared by slow fusion of the basic elements such as silver, lanthanum and selenium, in substantially stoichiometric properties, in powder form under an extended time period at elevated temperature, e.g. 650 DEG C. to 700 DEG C.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A light sensitive material consisting of a mixed metal chalcogenides having the chemical formula AgDySe 2  and having electrical properties, the electrical properties of said light sensitive material include generating a light induced direct current in response to light incident upon said light sensitive material in a range of about 400 nanometers to about 700 nanometers, said light induced direct current having a range of about 0.6 nanoamps to about 1.3 nanoamps.

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