Ferroelectric/silicide/silicon multilayer and method of making the multilayer

Abstract

A ferroelectric/silicide/silicon multilayer is made by a method including e steps of (A) depositing a layer of cobalt or nickel on a silicon substrate, (B) annealing the silicon substrate in an inert atmosphere at a temperature of about 750° C. to form a layer of cobalt silicide or nickel silicide on top of the silicon, and (C) depositing a ferroelectric layer onto the silicide layer.

What is claimed is: 
     
       1. A ferroelectric/silicide/silicon multilayer wherein the silicide is selected from the group consisting of cobalt silicide and nickel silicide. 
     
     
       2. A multilayer according to claim 1 wherein the ferroelectric is bismuth titanate, wherein the silicide is selected from the group consisting of cobalt silicide and nickel silicide and wherein the silicon is single crystal silicon. 
     
     
       3. A multilayer according to claim 2 wherein the silicide is cobalt silicide. 
     
     
       4. A multilayer according to claim 2 wherein the silicide is nickel silicide.