Single-chip, multi-functional optoelectronic device and method for fabricating same

Abstract

An optoelectronic device comprises a detector, an emitter and a modulator corporated into a single semiconductor chip. The optoelectronic device provides electrical isolation and optical interconnection (via waveguides) of the components of the semiconductor chip. Contacts for providing forward and reverse bias voltages are included in the device. The optoelectronic device is fabricated by growing a strained-layer quantum diode structure to produce a piezoelectric field in a quantum well, electrically isolating portions of the structure, and optically interconnecting portions of the structure. The fabrication is carried out by using an implant process or an etching process, and without having to use either regrowth techniques or packaging together of multiple optical elements.

We claim: 
     
       1. An optoelectronic device, comprising: detection means for receiving electromagnetic radiation and for converting said electromagnetic radiation to a modulating signal,   emitter means for transmitting further electromagnetic radiation, and   modulating means for receiving said modulating signal and said further electromagnetic radiation, and for encoding said further electromagnetic radiation onto said modulating signal to produce an output of said device;   wherein at least two of said detector means, said emitter means and said modulating means are incorporated into a single semiconductor chip.   
     
     
       2. The device of claim 1, wherein said at least two of said detector means, said emitter means and said modulating means are incorporated into said single semiconductor chip by a method other than a regrowth technique and a packaging of multiple optical elements together. 
     
     
       3. The device of claim 1, wherein said at least two of said detector means, said emitter means and said modulating means are incorporated into a single semiconductor chip by use of a piezoelectric semiconductor. 
     
     
       4. The device of claim 1, wherein said at least two of said detector means, said emitter means and said modulating means are incorporated into a single semiconductor chip by use of an epitaxial growth technique. 
     
     
       5. The device of claim 1, wherein said at least two of said detector means, said emitter means and said modulator means are incorporated into a single semiconductor chip by growing a strained-layer quantum well diode structure to produce a piezoelectric field in a quantum well. 
     
     
       6. The device of claim 1, wherein said at least two of said detector means, said emitter means and said modulator means are electrically isolated and optically connected. 
     
     
       7. The device of claim 1, wherein each of said detector means, said emitter means and said modulating means are incorporated into a single semiconductor chip. 
     
     
       8. The device of claim 7, wherein said at least two of said detector means, said emitter means and said modulator means are electrically isolated and optically connected. 
     
     
       9. The device of claim 1, further comprising electrical contact means for applying a bias voltage to said device. 
     
     
       10. The device of claim 9, wherein said bias voltage applied to said device comprises at least one of a positive bias and a negative bias. 
     
     
       11. The device of claim 1, further comprising waveguide means for optically connecting at least two of said detector means, said emitter means and said modulating means. 
     
     
       12. The device of claim 1, wherein said single semiconductor chip comprises a GaAs substrate. 
     
     
       13. The device of claim 12, wherein said single semiconductor chip further comprises an intrinsic region formed from AlGaAs. 
     
     
       14. The device of claim 13, wherein said single semiconductor chip further comprises a buffer formed of GaAs disposed between said substrate and said intrinsic region.