Magnetron sputter-pulsed laser deposition system and method

Abstract

System and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.

We claim:  
     
       1. A system for simultaneous or sequential high vacuum magnetron sputtering and pulsed laser plasma thin film deposition, comprising: 
       (a) a vacuum chamber;  
       (b) a rotatable substrate table disposed within chamber;  
       (c) a pulsed laser generator external of said chamber;  
       (d) optical means for directing a laser beam along an optical axis from said laser generator into said chamber;  
       (e) a rotatable target within said chamber, said target comprising a first material for ablation by said laser beam incident thereon and for deposit of the ablated first material onto a substrate on said rotatable substrate table; and  
       (f) a magnetron sputtering source disposed in a wall of said chamber for sputtering a second material as a thin film deposit onto said substrate; and  
       (g) wherein said rotatable substrate table with said substrate thereon is disposed within said chamber in relation to said magnetron sputtering source and said target to receive said ablated first material and sputtered said second material.  
     
     
       2. The system of claim  1  further comprising means defining a gas inlet in a wall of said chamber and a source of inert gas operatively connected to said inlet for controllably introducing inert gas into said chamber. 
     
     
       3. The system of claim  2  wherein said inert gas is selected from the group consisting of argon, krypton and xenon. 
     
     
       4. The system of claim  1  further comprising means defining a gas inlet in a wall of said chamber, and a source of reactive gas operatively connected to said inlet for controllably introducing a reactive gas into said chamber for reaction with said first material or said second material. 
     
     
       5. The system of claim  4  wherein said reactive gas is selected from the group consisting of oxygen, nitrogen, acetylene, methane, hydrogen sulfide and hydrogen. 
     
     
       6. The system of claim  1  wherein said second material is selected from the group consisting of silicon, titanium, chromium, molybdenum, tungsten, niobium, copper, aluminum, hafnium, zirconium and graphite. 
     
     
       7. The system of claim  1  wherein said second material is a composite type material selected from the group consisting of silicon nitride, titanium carbide, boron carbide, boron nitride, titanium nitride, chromium nitride, chromium carbide, hafnium carbide, hafnium nitride, tungsten carbide, alumina, and aluminum nitride. 
     
     
       8. The system of claim  1  wherein said optical means includes a programmable mirror, focusing lens and an entrance window defined in a wall of said chamber. 
     
     
       9. The system of claim  1  wherein said first material is selected from the group consisting of graphite, the transition metals, carbides, oxides, nitrides and dichalcogens of the transition metals, and polycarbonate, polyamide, polyimide, or polytetrafluoroethylene polymers. 
     
     
       10. A system for thin film deposition, comprising: 
       (a) a vacuum chamber and a vacuum system operatively connected to said chamber;  
       (b) means defining a gas inlet in a wall of said chamber;  
       (c) a source of inert gas operatively connected to said inlet for controllably introducing inert gas into said chamber,  
       (d) a rotatable substrate table disposed within chamber;  
       (e) a pulsed laser generator external of said chamber;  
       (f) optical means for directing a laser beam along an optical axis from said laser generator into said chamber;  
       (g) a rotatable target within said chamber, said target comprising a first material for ablation by said laser beam incident thereon and for deposit of the ablated first material onto a substrate on said rotatable substrate table;  
       (h) a magnetron sputtering source disposed in a wall of said chamber for sputtering a second material as a thin film deposit onto said substrate; and  
       (i) a source of reactive gas operatively connected to said inlet for controllably introducing a reactive gas into said chamber for reaction with said first material or said second material; and  
       (j) wherein said rotatable substrate table with said substrate thereon is disposed within said chamber in relation to said magnetron sputtering source and said target to simultaneously receive said ablated first material and sputtered said second material.  
     
     
       11. The system of claim  10  wherein said inert gas is selected from the group consisting of argon, krypton and xenon. 
     
     
       12. The system of claim  10  wherein said reactive gas is selected from the group consisting of oxygen, nitrogen, acetylene, methane, hydrogen sulfide and hydrogen. 
     
     
       13. The system of claim  10  wherein said second material is selected from the group consisting of silicon, titanium, chromium, molybdenum, tungsten, niobium, copper, aluminum, hafnium, zirconium and graphite. 
     
     
       14. The system of claim  10  wherein said second material is a composite type material selected from the group consisting of silicon nitride, titanium carbide, boron carbide, boron nitride, titanium nitride, chromium nitride, chromium carbide, hafnium carbide, hafnium nitride, tungsten carbide, alumina, and aluminum nitride. 
     
     
       15. The system of claim  10  wherein said optical means includes a programmable mirror, focusing lens and an entrance window defined in a wall of said chamber. 
     
     
       16. The system of claim  10  wherein said first material is selected from the group consisting of graphite, the transition metals, carbides, oxides, nitrides and dichalcogens of the transition metals, and polycarbonate, polyamide, polyimide, or polytetrafluoroethylene polymers.