Method of growing homoepitaxial silicon carbide

Abstract

A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C 60 , and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.

1. A solid source method of growing a homoepitaxial SiC film within an MBE system having a growth chamber and effusion cells having shutters, comprising the steps of:
 charging a first crucible with a quantity of Fullerenes;  
 installing said first crucible into a first effusion cell;  
 placing said first effusion cell into the growth chamber;  
 coating a second crucible with a layer of SiC;  
 charging said second crucible with a quantity of solid Si;  
 installing said second crucible into a second effusion cell;  
 placing said second effusion cell into the growth chamber;  
 providing a 6H-SiC substrate;  
 preparing said substrate by chemical-mechanical polishing;  
 loading said substrate into the growth chamber;  
 evacuating the growth chamber;  
 heating said substrate to a temperature of about 1500° C.;  
 heating said first effusion cell to a temperature range of about 500° C. to 650° C.;  
 heating said second effusion cell to a temperature above about 1500° C.; and,  
 growing a 6H-SiC homoepitaxial layer upon said substrate by controllably actuating the effusion cell shutters.  
 
   
   
     2. A solid source method of growing a homoepitaxial SiC film within an MBE system having a growth chamber and effusion cells having shutters, comprising the steps of:
 charging a first crucible with a quantity of Fullerenes;  
 installing said first crucible into a first effusion cell;  
 placing said first effusion cell into the growth chamber;  
 coating a second crucible with a layer of SiC;  
 exposing said coated crucible to atmosphere;  
 repeating said coating step above;  
 charging said second crucible with a quantity of solid Si;  
 installing said second crucible into a second effusion cell;  
 placing said second effusion cell into the growth chamber;  
 providing a SiC substrate;  
 polishing said substrate;  
 cleaning said substrate with pressurized CO 2 ;  
 etching said substrate;  
 rinsing said substrate;  
 drying said substrate with pressurized N 2 ;  
 loading said substrate into the growth chamber;  
 evacuating the growth chamber;  
 heating said substrate to a temperature of about 1500° C.;  
 heating said first effusion cell to a temperature range of about 500° C. to 650° C.;  
 heating said second effusion cell to a temperature above about 1500° C.; and,  
 growing a homoepitaxial layer of SiC upon said substrate by controllably actuating the effusion cell shutters.