Large area metallization pretreatment and surface activation system

Abstract

A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.

1. A large area metallization pretreatment and surface activation system, consisting of:
 (a) a gas or gas mixture;  
 (b) an electron beam source;  
 (c) a low electron plasma of pre-determined width, length, thickness, and location relative to a surface, wherein a plasma sheet is produced by the electron beam passing through the gas or gas mixture;  
 (d) a substrate to be treated;  
 wherein a radical and ion flux from the plasma is controlled to chemically and physically alter the surface of the substrate thereby improving the ability of a film to adhere to the substrate;  
 wherein the radical and ion flux from the plasma is controlled by selecting an appropriate gas mixture based on the desired surface pretreatment and by altering the separation between the plasma sheet and the substrate.  
 
     
     
       2. The system of  claim 1 , wherein said electron beam source has a width much larger in dimension than its thickness. 
     
     
       3. The system of  claim 1 , wherein the electron beam is confined to produce a geometrically well-defined, spatially uniform plasma sheet. 
     
     
       4. The system of  claim 1 , wherein the relative position of said electron beam, plasma, and substrate is adjustable. 
     
     
       5. The system of  claim 1 , wherein said substrate is electrically biased. 
     
     
       6. The system of  claim 1 , wherein said gas or gas mixture comprises at least one molecular gas chosen to produce a specific radical species. 
     
     
       7. The system of  claim 1 , utilizing roll-to-roll spools to feed the substrate. 
     
     
       8. A large area metallization pretreatment and surface activation system, consisting of:
 (a) a gas or gas mixture;  
 (b) an electrom beam source;  
 (c) a low electron plasma of pre-determined width, length, thickness, and location relative to a surface, wherein a plasma sheet is produced by the electron beam passing through the gas or gas mixture;  
 (d) a substrate to be treated;  
 wherein a radical and ion flux from the plasma is controlled to chemically and physically alter the surface of the substrate thereby improving the ability of a film to adhere to the substrate;  
 wherein the radical and ion flux from the plasma is controlled by selecting an appropriate gas mixture based on the desired surface pretreatment and by altering the separation between the plasma sheet and the substrate;  
 (e) a second gas or gas mixture; and  
 (f) a target comprising a material source for thin films or coatings  
 wherein plasma is used with the second gas or gas mixture to sputter material from the target and deposit as a thin film or coating the sputtered material onto the pretreated substrate.  
 
     
     
       9. The system of  claim 8 , wherein said target is electrically biased above a sputtering threshold for said material source. 
     
     
       10. The system of  claim 8 , wherein said electron beam and said plasma are located between the target and the substrate. 
     
     
       11. The system of  claim 8 , wherein the relative position of said electron beam, plasma, target, and substrate is adjustable. 
     
     
       12. The system of  claim 8 , wherein said second gas is selected from the group consisting of atomic or molecular gases or mixtures thereof. 
     
     
       13. The system of  claim 8 , utilizing roll-to-roll spools to feed the substrate. 
     
     
       14. The system of  claim 1 , utilizing a conventional plasma vapor deposition system for generating material for coating or deposition on the pretreated substrate, said material being generated from a material source by sputtering means or vaporization means. 
     
     
       15. The system of  claim 14 , wherein said sputtering means is selected from the group consisting of magnetrons and ion beams. 
     
     
       16. The system of  claim 14 , wherein, said vaporization means is selected from the group consisting of electron beams, lasers, and thermal sources. 
     
     
       17. The system of  claim 14 , wherein said electron beam and said plasma are located between said source material and said substrate. 
     
     
       18. The system of  claim 14 , wherein the relative position of said electron beam, plasma, source material, and substrate is adjustable. 
     
     
       19. A method of producing a chemically active surface to improve the ability of a film to adhere to a substrate, consisting of the steps of:
 (a) producing a low electron plasma of pre-determined width, length, thickness, and location relative to a surface by passing an electron beam through a gas or gas mixture; and  
 (b) controlling a radical and ion flux from the plasma to chemically and physically alter the surface of a substrate thereby improving the ability of a film to adhere to the substrate;  
 wherein the radical and ion flux from the plasma is controlled by selecting an appropriate gas mixture based on the desired surface pretreatment and by altering the separation between the plasma and the substrate.  
 
     
     
       20. The method of  claim 19 , wherein said electron beam has a width much larger in dimension than its thickness. 
     
     
       21. The method of  claim 19 , wherein the electron beam is confined by means of a magnetic field to produce a geometrically well-defined, spatially uniform plasma sheet. 
     
     
       22. The method of  claim 19 , wherein the relative position of said electron beam, plasma, and substrate is adjustable. 
     
     
       23. The method of  claim 19 , wherein said substrate is electrically biased. 
     
     
       24. The method of  claim 19 , wherein said gas or gas mixture comprises at least one molecular gas chosen to produce a specific radical species. 
     
     
       25. The method of  claim 19 , utilizing roll-to-roll spools to feed the substrate. 
     
     
       26. The method of  claim 19 , using a second gas or gas mixture with the electron beam generated plasma to sputter material from a target and deposit as a thin film or coating the sputtered material onto the pretreated substrate. 
     
     
       27. The method of  claim 26 , wherein said target is electrically biased above a sputtering threshold for said material source. 
     
     
       28. The method of  claim 26 , wherein said electron beam and plasma are located between the target and the substrate. 
     
     
       29. The method of  claim 26 , wherein the relative position of said electron beam, plasma, target, and substrate is adjustable. 
     
     
       30. The method of  claim 26 , wherein said second gas is selected from the group consisting of atomic or molecular gases or mixtures thereof. 
     
     
       31. The method of  claim 26 , using roll-to-roll spools to feed the substrate. 
     
     
       32. The method of  claim 19 , using a conventional plasma vapor deposition system for generating material for coating or deposition on the pretreated substrate, said material being generated from a material source by sputtering means or vaporization means. 
     
     
       33. The method of  claim 32 , wherein said sputtering means is selected from the group consisting of magnetrons and ion beams. 
     
     
       34. The method of  claim 32 , wherein, said vaporization means is selected from the group consisting of electron beams, lasers, and thermal sources. 
     
     
       35. The method of  claim 32 , wherein said plasma is located between said source material and said substrate. 
     
     
       36. The method of  claim 32 , wherein the relative position of said electron beam, plasma, source material, and substrate is adjustable.