Magnetoplasmadynamic processor, applications thereof and methods

Abstract

Embodiments of magnetoplasmadynamic processors are disclosed which utilize specially designed cathode-buffer, anodeionizer and vacuum-insulator/isolator structures to transform a working fluid into a beam of fully ionized plasma. The beam is controlled both in its size and direction by a series of magnets which are mounted in surrounding relation to the cathode, anode, vacuum insulator/isolators and plasma beam path. As disclosed, the processor may be utilized in many diverse applications including the separation of ions of differing weights and/or ionization potentials and the deposition of any ionizable pure material. Several other applications of the processor are disclosed.

What is claimed is: 
     
       1. An apparatus for depositing materials in layers by using a plasma beam electromagnetically accelerated in a vacuum comprising: (a) a vacuum chamber and associated vacuum pumping apparatus;   (b) a magnetoplasmadynamic plasma generator, the plasma generator further comprising cathode means, anode means, a cathode magnet located in substantially surrounding relation to said cathode means; a trimmer magnet located in substantially surrounding relation to said anode means; a focusing magnet, at least part of which is located beyond the anode means with respect to the cathode means;   (c) a shielded plasma generator support structure, the support structure supporting the plasma generator within the vacuum chamber;   (d) a means to supply the plasma generator with electric power, the electric power being primarily direct current and the power enabling the plasma generator to create a plasma;   (e) a target surface, the target surface being located beyond the focusing magnet with respect to the cathode .Iadd.means .Iaddend.and anode .Iadd.means.Iaddend.; and   (f) means for injecting one or more of a plurality of materials at a location within said vacuum chamber so as to facilitate the creation of a plasma stream;   (g) said plasma stream impinging upon said target surface. .[.   
     
     
       2.  The apparatus of claim 1, further including an access door enabling access to the inside of the vacuum chamber from the outside, the access door having scaling means..]. 
     
     
       3. The apparatus of claim 3 wherein the means for injecting materials into the plasma .[.is further adapted to inject.]. .Iadd.includes means for injecting .Iaddend.dopant material .[.so that the.]. .Iadd.for selectively applying .Iaddend.dopant material .[.may be selectively applied.]. at said target surface. 
     
     
       4. The apparatus of claim 3 wherein the means for injecting one or more of a plurality of materials injects the materials adjacent to the cathode .Iadd.means.Iaddend.. 
     
     
       5. The apparatus of claim 3 wherein means are provided so that the directional orientation of a flux pattern of the focusing magnet can be rotated with respect to an initial plasma center line, the initial plasma center line being a line passing through a center of the cathode .Iadd.means .Iaddend.and a center of the anode .Iadd.means, .Iaddend.the rotation of the directional orientation of the flux pattern of the focusing magnet being effective to enable the apparatus to deposit material selectively at various portions of the target surface. 
     
     
       6. The apparatus of claim 4 wherein means are provided so that the directional orientation of a flux pattern of the focusing magnet can be rotated with respect to an initial plasma center line, the initial plasma center line being a line passing through a center of the cathode .Iadd.means .Iaddend.a center of the anode.Iadd.means.Iaddend., the rotation of the directional orientation of the flux pattern of the focusing magnet being effective to enable the apparatus to deposit material selectively at various portions of the target surface. .[.7. The apparatus of claim 6 further comprising a robot means, the robot means being operable to move materials to and from the target surface..]. .[.8. The apparatus of claim 1, utilized to form semiconductor devices..]. .[.9. The apparatus of claim 8 wherein the semiconductor devices are silicon 
     
     
        solar cells..]. 10. The apparatus of claim 1 wherein the cathode means is 
     
     
        a thermionic cathode. 11. The apparatus of claim 10 wherein the thermionic cathode further includes a buffer means mounted in surrounding relation thereto, said buffer means defining a buffer cavity adjacent a tip portion of said thermionic cathode, and means supplying gas to said buffer cavity. 
     
     
        2. The apparatus of claim 1 wherein .Iadd.said means for injecting includes means for injecting .Iaddend.silicon .[.is injected.]. into the 
     
     
        plasma generator during the operation of the the apparatus. .[.13.  The apparatus of claim 12 wherein the silicon is injected as a fluid compound..]. .[.14. The apparatus of claim 12 wherein the silicon is 
     
     
        injected as elemental silicon in liquid form..]. 15. The apparatus of claim 12 wherein .Iadd.said means for injecting silicon includes means for injecting .Iaddend.the silicon .[.is injected.]. through the anode means. 
     
     
         6. The apparatus of claim 12 wherein .Iadd.said means for injecting silicon includes means for injecting .Iaddend.the silicon .[.is 
     
     
        injected.]. through the cathode means. .[.17.  The apparatus of claim 3, wherein the dopant is mixed with the plasma stream when the dopant is injected..]. .[.18. The apparatus of claim 8 wherein top terminals may be deposited on the semiconductor devices by the plasma generator..]. .[.19. The apparatus of claim 18 wherein the top terminals are formed by the deposition of aluminum..]. .[.20. The apparatus of claim 18 wherein said deposition at the top terminals is accomplished by first having the robot means first place a solid template over the target area said template having appropriate deposition openings extending therethrough and then 
     
     
        depositing terminal material by means of the plasma generator..]. .[.21. The apparatus of claim 20, wherein said terminal material comprises 
     
     
        aluminum.]. 22. The apparatus according to claim 1 wherein the vacuum pumping apparatus comprises a cryogenic vacuum pump and an ion vacuum pump. .[.23. The apparatus of claim 22, wherein said vacuum pumping apparatus further includes a sorption pump..]. .[.24. The apparatus of claim 11, wherein insulation means is provided between said cathode means and said buffer means, and said means for supplying gas to said buffer cavity extends through said insulation means..]. .[.25. The apparatus of claim 24, further wherein cooling means is provided for said cathode means and said buffer means..]. .[.26. The apparatus of claim 25, wherein said cooling means comprises tube means extending within said cathode means and 
     
     
        said buffer means, and means for supplying coolant therethrough..]. 27. The apparatus of claim 1, wherein said cathode magnet is controllable to establish a .[.predetermined.]. .Iadd.selected .Iaddend.magnetic field strength at a tip portion of said cathode means, the magnet field formed thereby diverging away from the cathode means in the direction of said 
     
     
        anode means. 28. The apparatus of claim 27, wherein said anode means comprises a .[.ring-like.]. .Iadd.ring-shaped .Iaddend.member and said trimmer magnet is adjustable to control the magnetic field within the 
     
     
        ring-like anode means. 29. The apparatus of claim 1, further including upstream vacuum insulator/isolator means mounted in said vacuum chamber 
     
     
        between said cathode means and said anode means. 30. The apparatus of claim 29, wherein said upstream vacuum insulator/isolator means comprises a plurality of discs, each said disc including an outer diameter and an opening therethrough, said openings sequentially increasing in diameter from said cathode means to said anode means with a disc closest to said cathode means having the smallest opening and a disc closest to said anode 
     
     
        nieans having the largest opening. 31. The apparatus of claim 29, further including downstream vacuum insulator/isolator means mounted to said 
     
     
        vacuum chamber between said anode means and said target surface. 32. The apparatus of claim 31, wherein said downstream vacuum insulator/isolator means comprises a plurality of truncated conical rings of substantially idetitical configuration. .[.33. The apparatus of claim 32 wherein said upstream vacuum insulator/isolator means comprises a plurality of discs, each said disc including an outer diameter and an opening therethrough, said openings sequentially increasing in diameter from said cathode means to said anode means with a disc closest to said cathode means naving the smallest opening and a disc closest to said anode means having the largest opening..]. .[.34. The apparatus of claim 1, wherein said anode means includes cooling means thererer..]. 35. The apparatus of claim 1, wherein said target surface includes cooling means therefor..]. 36. The apparatus of claim 33, wherein said anode means forther includes conduit means for supplying feed gas thereto, said conduit means being surrounded by further 
     
     
        vacuum insulator/isolator means..]. 37. The apparatus of claim .[.36,.]. .Iadd.32, .Iaddend.wherein said anode means further includes conduit means for supplying dopant gas thereto, said dopant gas conduit means being surrounded by .[.still.]. further vacuum insulator/isolator means, one of said dopant gas and feed gas vacuum insulator/isolator means forther 
     
     
        enclosing power lead means for said anode means. 38. A magnetoplasmadynamic processor comprising: (a) an elongated vacuum chamber having a longitudinal axis therethrough;   (b) cathode-buffer means mounted in said vacuum chamber substantially aligned with said longitudinal axis and including:   (i) a cathode rod;   (ii) a buffer mounted in surrounding spaced relation to said cathode rod; and   (iii) gas supply means for supplying gas to a buffer cavity formed between said cat,bode rod and said buffer;   (c) an anode-ionizer mounted in said vacuum chamber substantially aligned with said longitudinal axis and including:   (i) an inner ring portion;   (ii) an outer substantially cylindrical portion in surrounding relation to said inner ring portion;   (iii) a gap defined between said inner ring portion and said outer substantially cylindrical portion; and   (iv) means for supplying gas to said gap; (d) accelerating magnet means including:   (i) a cathode magnet substantially surrounding said cathode buffer means, and   (ii) a trimmer magnet substantially surrounding said anode-ionizer, and   (e) upstream vacuum insulator/isolator means mounted in said vacuum chamber between said cathode-buffer means and said anode-ionizer and substantially   
     
     
        aligned with said longitudinal axis. 39. The processor of claim 38, wherein said cathode-buffer means further includes insulation means 
     
     
        between said cathode rod and said buffer. 40. The processor of claim 39, wherein said gas supply means includes .[.thread-like.]. passageways extending through said insulation means and communicating with said buffer 
     
     
        cavity whereby said gas is caused to swirl in said buffer cavity. 41. The processor of claim 40, wherein said cathode rod includes a pointed tip 
     
     
        extending into said buffer cavity. 42. The processor of claim 38, wherein said buffer includes orifice means communicating said buffer cavity with said vacuum chamber, said orifice means being substantially aligned with 
     
     
        said axis. 43. The processor of claim 42, wherein said orifice means is of a size .[.designed.]. to maintain a back pressure of gas within said 
     
     
        buffer cavity. 44. The processor of claim 38, wherein said inner ring portion of said anode-ionizer includes a first end substantially flush with a first end of said outer substantially cylindrical portion and said inner ring portion is significantly shorter in direction of said axis then said outer substantially cylindrical portion whereby a second end of said inner ring portion lies completely within said outer substantially 
     
     
        cylindrical portion. 45. The .[.invention.]. .Iadd.processor .Iaddend.of claim 44, wherein said outer substantially cylindrical portion includes first and second orifices communicating the exterior thereof with said gap, and said means for supplying gas to said gap comprises: (a) First conduit means sealingly attached to said first orifice and communicating a rirst gas to said gap;   (b) first anode vacuum insulator/isolator means surrounding said first conduit means;   (c) second conduit means scalingly attached to said second orifice and communicating a second gas to said gap; and   (d) second anode vacuum insulator/isolator means surrounding said second   
     
     
        conduit means. .[.46.  The invention of claim 45, wherein said first and second anode insulator/isolator means comprise: (a) an insulative covering attached to a respective conduit means; (b) first cylindrical means surrounding said insulative covering and spaced therefrom; (e) second cylindrical means surrounding said first cylindrical means and spaced therefrom; and (d) means for structurally supporting said first and second 
     
     
        cylindrical means in said spaced relation..]. 47. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, wherein said vacuum chamber has an annular stepped configuration adjacent said cathode-buffer means and said cathode magnet is located in overlying relation to said annular stepped 
     
     
        configuration. 48. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, wherein said upstream vacuum insulator/isolator means comprises a plurality of discs, each said disc including an outer diameter and an opening therethrough, said openings sequentially increasing in diameter from said cathode-buffer means to said anode-ionizer with a disc closest to said cathode-buffer means having the smallest opening and a disc 
     
     
        closest to said anode-ionizer having the largest opening. 49. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, wherein said vacuum chamber extends a substantial distance beyond said anode-ionizer, and further wherein said processor includes downstream vacuum 
     
     
        insulator/isolator means mounted within said vacuum chamber. 50. The .[.invention.]. .Iadd.processor .Iaddend.of claim 49, wherein said downstream vacuum insulator/isolator means comprises a plurality of substantially identical truncated conical segments mounted about said axis 
     
     
        beyond said anode-ionizer. 51. The .[.invention.]. .Iadd.processor .Iaddend.of claim 50, wherein said processor further coniprises focusing magnet means surrounding said downstream vacuum insulator/isolator means. .[.52. The invention of claim 51, wherein said focusing magnet means comprises a plurality of focusing magnets attached to the exterior of said vacuum chamber in surrounding relation to said truncated conical segments..]. .[.53. The invention of claim 45, wherein said first gas comprises semiconductor feed gas and said second gas comprises dopant 
     
     
        gas..]. 54. The .[.invention.]. .Iadd.processor .Iaddend.of claim 45, wherein a target means is provided in said vacuum chamber aligned with said axis at a location spaced from said anode-ionizer, and a plasma stream formed by said processor impinges upon said target means. .[.55. The invention of claim 54, wherein constituent iotis from said first and second gases combine at said target means to form a compound..]. .[.56. The invention of claim 54, wherein constituent ions from said first and second gases combine at said target means to form a mixture..]. .[.57. The invention of claim 54, wherein constituent ions from said first and second gases combine at said target means-to form an alloy..]. .[.58. The invention of claim 54, wherein some constituent ions from said first and second gases combine at said target to form one of a compound, a mixture and an alloy, and wherein said processor further includes pumping means for pumping from said plasma stream and vacuum chamber constituent unionized particles from said first and second gases..]. .[.59. The invention of claim 58, wherein said pumping means comprises mechanical pump means..]. .[.60. The invention of claim 58, wherein said pumping means comprises ion pump means..]. .[.61. The invention of claim 58, wherein said pumping means comprises sorption pump means..]. .[.62. The invention of claim 58, wherein said pumping means comprises mechanical and ion pump means..]. .[.63. The invention of claim 58, wherein said pumping means comprises mechanical and sorption pump means..]. .[.64. The invention of claim 58, wherein said pumping means comprises ion and sorption pump means..]. .[.65. The invention of claim 58, wherein said pumping means comprises mechanical, ion atid sorption pump means.1 .]. .[.66. The invention of claim 54, further including cooling means for said target means..]. .[.67. The invention of claim 78, wherein said cooling means comprises conduit means extending through said target means and 
     
     
        supply means for supplying coolant to said conduit means..]. 68. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, further including 
     
     
        cooling means for said cathode rod. 69. The .[.invention.]. .Iadd.processor .Iaddend.of claim 68, further comprising cooling means for 
     
     
        said buffer. 70. The .[.invention.]. .Iadd.processor .Iaddend.of claim 69, 
     
     
        further comprising, cooling means for said anode-ionizer. 71. The .[.invention.]. .Iadd.processor .Iaddend.of claim 70, further comprising 
     
     
        cooling means for said means for supplying gas to said gap. 72. The .[.invention.]. .Iadd.processor .Iaddend.of claim 45, wherein said first and second orifices open into said gap tangentially whereby said first and 
     
     
        second gases are caused to swirl within said gap. 73. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, wherein collection means is provided 
     
     
        in said vacuum chamber for ions of predetermined molecular weights. 74. The .[.invention.]. .Iadd.processor .Iaddend.of claim 73, wherein said collection means comprises a first collector for high molecular weight 
     
     
        ions and a second collector for low molecular weight ions. 75. The .[.invention.]. .Iadd.processor .Iaddend.of claim 73, wherein said first collector comprises a substantially conically shaped member mounted along said axis and oriented with a tip portion thereof facing said anode-ionizer and a base portion thereof facing away from said 
     
     
        anode-ionizer. 76. The .[.invention.]. .Iadd.processor .Iaddend.of claim 75, wherein said second collector comprises a flat plate facing said 
     
     
        anode-ionizer. 77. The .[.invention.]. .Iadd.processor .Iaddend.of claim 76, wherein said second collector further comprises a substantially 
     
     
        circular flat plate with a hole centrally located therein. 78. The .[.invention.]. .Iadd.processor .Iaddend.of claim 77, wherein said first collector extends through said hole in said second collector and is substantially perpendicular to said second collector. .[.79. The invention of claim 51, further including a plurality of anode elements and cathode elements mounted within said vacuum chamber in surrounding relation to said downstream vacuum insulator/isolator means..]. .[.80. The invention of claim 79, wherein said anode elements and cathode elements are mounted in alternating fashion with at least one anode element located between two cathode elements and at least one cathode element located between two anode elements..]. .[.81. The invention of claim 80, wherein said anode elements and cathode elements are surrounded by said focusing magnet means..]. .[.82. The invention of claim 81, wherein said focusing magnet means is operative to: (a) focus a plasma stream formed by said processor onto target means located in said vacuum chamber, and (b) interact with said cathode elements and anode elements to form an ion pump which pumps atoms or molecules from said chamber..]. .[.83. The invention of claim 60 wherein said ion pump means comprises: (a) a plurality of anode clements and cathode elements mounted in alternating relation in said vacuum chamber between said anode-ionizer and said target means and in surrounding relation to said plasma stream, and (b) ion pump magnet means surrounding said anode clements and cathode elements..]. .[.84. The invention of claim 83, wherein said ion pump magnet means further comprises focusing magnet means for focusing said plasma stream onto said 
     
     
        target means..]. 85. The .[.invention.]. .Iadd.processor .Iaddend.of claim 54, wherein constituent ions from said first and second gases combine at 
     
     
        said target means to form a doped semiconductor..]. 86. .[.The invention of claim 58 wherein at least one of said first and second gases comprises a plurality of gases which are non-reactive with respect to one 
     
     
        another..]. 87. .[.The invention of claim 54, wherein constituent ions from said first and second gases combine at said target means to form a 
     
     
        semi-conductor..]. 88. The .[.invention.]. .Iadd.processor .Iaddend.of claim 38, wherein the ion flux rate of a plasma stream formed by said processor is determined by the critical mass flow rate of ions in said plasma stream, said critical mass flow rate (m I ) cr  being defined by the formula:   (m.sub.I).sub.cr =(F.sub.EM /V.sub.cr)     where   F EM  =electromagnetic reaction force on said accelerating magnet means and on all current carrying structure within said vacuum chamber   V cr  =critical exhaust velocity of said plasma stream which equals the Alfen velocity and, further, wherein gas is supplied to said gap by said gas supplying means at a sufficient rate to thereby provide the desired ion flux rate.     
     
     
          . The .[.invention.]. .Iadd.processor .Iaddend.of claim 38 wherein: (a) said processor further includes focusing magnet means located beyond said anode-ionizer with respect to said cathode-buffer means;   (b) said processor forms a plasma stream;   (c) said plasma stream is composed of a cathode jet and an anode sheath which converge at a .[.predetermined.]. distance L beyond said anode-ionizer to form an electromagnetic throat, said .[.predetermined.]. distance L being defined by the formula: ##EQU82## where Φ A  =πR A   2  (B z ) A     R A  =an inner radius of the anode-ionizer   (B z ) A  =average strength of the axial magnetic field at said anode-ionizer   σ=electrical conductivity of gas in said cathode jet.   k=Boltzman's constant   T=Gas (electron) temperature   m=mass flow rate in teh cathode jet.   m a  =mass of an atom of gas flowing in the cathode jet.   I=current flowing thru the cathode jet.   
     
     
       e=charge in the electron. ##EQU83## γ=ratio of specific heats; (d) and further wherein said term (B z ) A  is a function of magnetic fields created by said cathode magnet, said trimmer magnet and said focusing magnet means, adjustment of said magnetic fields being operative to adjust said predetermined 
     
     
        distance. .Iadd.90.  Apparatus for depositing material onto a substrate from a vapor phase comprising: (a) a cathode;   (b) an anode spaced from said cathode along an axis;   (c) means for creating a d.c. electrical arc between said cathode and said anode, including means for creating a d.c. electric field between said anode and said cathode and means for injecting a gas proximate said cathode for being ionized by said electric field;   (d) means for injecting a working fluid containing a material to be deposited on the substrate or a precursor thereof into the path of said ionized gas for being ionized thereby to form a plasma;   (e) means for creating a solenoidal magnetic field between said cathode and said anode centered about said axis, said field diverging in the direction of and beyond said anode from said cathode, said field azimuthally and axially accelerating the plasma with the divergence of said solenoidal magnetic field acting to axially accelerate said plasma beyond said anode in the direction of said divergence;   (f) means for positioning the substrate in the path of said accelerated plasma for forming a coating of said material thereon; and   (g) means for establishing a partial vacuum encompassing said arc, said   
     
     
        plasma and said substrate. .Iaddend. .Iadd.91.  Apparatus for treating a substrate with a material from a vapor phase comprising: (a) a cathode;   (b) an anode spaced from said cathode along an axis;   (c) means for creating a d.c. electrical arc between said cathode and said anode, including means for injecting a gas proximate said cathode for being ionized by said arc;   (d) means for injecting a working fluid into the path of said ionized gas proximate said anode for being ionized thereby to form a plasma, said working fluid including the material for treating the substrate or a precursor thereof;   (e) means for creating a solenoidal magnetic field between said cathode and said anode centered about said axis, said field diverging in the direction of and beyond said anode from said cathode, said field azimuthally and axially accelerating the plasma beyond said anode in the direction of said divergence;   (f) means for positioning the substrate in the path of said plasma for being treated by said plasma; and   (g) means for establishing a partial vacuum encompassing said cathode,   
     
     
        anode, injected gas and working fluid and substrate. .Iaddend. .Iadd.92. The apparatus of claim 91 wherein said means for injecting a gas includes means for azimuthal injecting said gas about said axis, and said means for injecting a working fluid into said ionized gas includes means for azimuthal injecting said working fluid about said axis. .Iaddend. 
     
     
        .Iadd.     Apparatus of claims 90 or 91 wherein said means for injecting a working fluid includes means for injecting said working fluid azimuthally 
     
     
        about the axis of said solenoidal magnetic field. .Iaddend. .Iadd.94.  The apparatus of claim 91, wherein the means for creating a solenoidal magnetic field comprises an accelerating magnet adjacent to the cathode. .Iaddend. .Iadd.95. The apparatus of claim 91, wherein said means for creating a solenoidal magnetic field comprises a cathode magnet located in substantially surrounding relation to said cathode. .Iaddend. .Iadd.96. The apparatus of claim 91, further including a trimmer magnet located adjacent to said anode. .Iaddend. .Iadd.97. The apparatus of claim 91, further including a focusing magnet located between said anode and said 
     
     
        means for positioning the substrate. .Iaddend. .Iadd.98.  Apparatus for depositing material onto a substrate from a vapor phase comprising: (a) a cathode;   (b) an anode spaced from said cathode;   (c) means for creating a d.c. electrical arc between said cathode and said anode, including means for injecting a gas proximate said cathode;   (d) means for injecting a working fluid proximate said anode with a velocity component tangential to a circle normal to the axis of the solenoidal field and for ionizing said fluid to form a plasma, said ionized fluid containing a material to be deposited on the substrate or a precursor thereof;   (e) a plurality of magnets including an accelerating magnet adjacent to said cathode, a trimmer magnet located adjacent to said anode, and a focusing magnet located beyond said anode from said cathode;   (f) means for positioning the substrate in the path of said plasma beyond said focusing magnet for forming a coating of said material thereon; and   (g) means for establishing a partial vacuum encompassing said cathode,   
     
     
        anode, injected gas and working fluid and substrate. .Iaddend. .Iadd.99. A method for depositing materials on a substrate comprising the steps of: (a) establishing a d.c. arc along an axis between a cathode and an anode spaced from said cathode along said axis including injecting a gas for being ionized by said arc;   (b) ionizing a working fluid containing a material to be deposited on the substrate or a precursor thereof to form a plasma by injecting said fluid into the path of said ionized gas;   (c) azimuthal and axially accelerating the plasma beyond said anode from said cathode by subjecting said plasma to a solenoidal magnetic field centered about said axis, said field diverging in the direction of and beyond said anode from said cathode;   (d) coating the substrate with said material by positioning said substrate in the path of said accelerated plasma; and   (e) establishing a partial vacuum in the region encompassing said arc, said   
     
     
        plasma and said substrate. .Iaddend. .Iadd.100.  A method for treating a substrate with a material from a vapor phase comprising: (a) creating a d.c. electrical arc between a cathode and an anode spaced from said cathode along an axis including injecting a gas proximate said cathode for being ionized by said arc;   (b) injecting a working fluid into said ionized gas proximate said anode for being ionized thereby to form a plasma, said working fluid including a material for treating the substrate or a precursor thereof;   (c) creating a solenoidal magnetic field between said cathode and said anode centered about said axis, said field diverging in the direction of and beyond said anode from said cathode, said field azimuthally and axially accelerating said plasma beyond said anode in the direction of said divergence;   (d) positioning the substrate in the path of said plasma for being treated by said plasma; and   (e) establishing a partial vacuum in the region encompassing said cathode,   
     
     
        anode, injected gas and working fluid and substrate. .Iaddend. .Iadd.101. The method of claim 100 wherein said gas and said working fluid are 
     
     
        injected azimuthally about said axis. .Iaddend. .Iadd.102.  The method of claim 100 wherein said plasma forms a coating of said material on said 
     
     
        substrate. .Iaddend. .Iadd.103.  Apparatus for practicing the method of claim 100 for treating a substrate with a material from a vapor phase, comprising: (a) a cathode;   (b) an anode spaced from said cathode along an axis;   (c) means for creating a d.c. electrical arc between said cathode and said anode including injecting a gas proximate said cathode for being ionized by said arc;   (d) means for injecting a working fluid into said ionized gas proximate said anode for being ionized thereby to form a plasma, said working fluid including a material for treating the substrate or a precursor thereof;   (e) means for creating a solenoidal magnetic field between said cathode and said anode centered about said axis, said field diverging in the direction of and beyond said anode from said cathode, said field azimuthally and axially accelerating said plasma beyond said anode in the direction of said divergence;   (f) means for positioning the substrate in the path of said plasma for being treated by said plasma; and   (g) means for establishing a partial vacuum in the region encompassing said cathode, anode, injected gas and working fluid and substrate. .Iaddend.   
     
     
        .Iadd.104.  Apparatus for separating a higher molecules weight material from a lower molecular weight material in a vapor phase comprising: (a) a cathode;   (b) an anode spaced from said cathode along an axis;   (c) means for creating a d.c. electrical arc discharge, between said anode and said cathode, including injecting a gas proximate said cathode for being ionized by said arc discharge, said anode being configured for causing said arc discharge to extend along said axis beyond said anode from said cathode;   (d) means for injecting a working fluid into the path of said ionized gas for being ionized thereby to form a plasma, said plasma containing ions of said materials to be separated;   (e) means for establishing a solenoidal magnetic field about said axis, said field diverging in the direction of and beyond said anode from said cathode for azimuthal and axially accelerating said plasma beyond said anode in the direction of said divergence;   (f) a first surface positioned in the central portion of said plasma, centered on said axis for depositing the higher molecular weight material thereon;   (g) a second surface positioned in a peripheral portion of said plasma surrounding said central portion for depositing said lower molecular weight material thereon; and   (h) means for establishing a partial vacuum in the region encompassing said cathode, anode, arc, plasma and first and second surfaces. .Iaddend.   
     
     
        .Iadd.05.  The apparatus of claim 104 wherein the portion of the arc discharge extending beyond said anode includes a cathode jet and an anode sheath, and wherein said first surface extends into said cathode jet. 
     
     
        .Iaddend. .Iadd.106.  The apparatus of claims 90, 91, 98 or 104 wherein said anode includes a substantially cylindrical hollow portion extending axially downstream away from said cathode for assisting in the ionization of said working fluid. .Iaddend. .Iadd.107. The apparatus of claims 90, 91, 98 or 104 further including vacuum insulator/isolator means between 
     
     
        said cathode and anode. .Iaddend. .Iadd.108.  A method for separating a higher molecular weight material from a lower molecular weight material in a vapor phase comprising: (a) establishing a d.c. electrical arc discharge between a cathode and an anode spaced from said cathode along an axis, said arc discharge including an ionized gas and having a portion extending along said axis from said anode in the direction away from said cathode;   (b) ionizing a working fluid to form a plasma by injecting said fluid into the path of said ionized gas, said ionized working fluid containing ions of such different molecular weight materials to be separated;   (c) establishing a solenoidal magnetic field centered about said axis, said field diverging in the direction of and beyond said anode from said cathode, said field azimuthally and axially accelerating said plasma beyond said anode in the direction of said divergence;   (d) depositing the higher molecular weight material on a first surface located in the central portion of said plasma centered on said axis;   (e) depositing said lower molecular weight material on a second surface located in a peripheral area of said plasma surrounding said central portion; and   (f) establishing a partial vacuum in the region encompassing said cathode, anode, arc discharge, plasma and first and second surfaces. .Iaddend.   
     
     
        .Iadd.109.  The method of claim 108 wherein said portion of said arc discharge extending beyond said anode includes a cathode jet and an anode sheath, and wherein said step of depositing the higher weight material includes collecting said higher molecular weight ions on a surface extending into said cathode jet. .Iaddend.