Ceramic multilayer circuit board and semiconductor module

Abstract

A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than that of the wiring conductor and not lower than one half of that of the conductor layer and is formed from a glass which softens at a temperature not higher than the melting point of the wiring conductor layer; a semiconductor module having a high reliability in its solder joint part comprising said ceramic multilayer circuit board mounted with a ceramic carrier substrate being mounted with a semiconductor device, said board being able to use a silver or copper conductor having a good electro-conductivity; and an amorphous glass powder for said ceramic multilayer circuit board.

We claim: 
     
       1. A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which consists essentially of 20 to .Badd..[.85.]..Baddend. .Iadd.95.Iaddend.% of SiO 2  and at least one member selected from 25% or less of Al 2  O 3 , .Badd..[.1.]..Baddend. .Iadd.15 .Iaddend.to 25% of MgO, 50% or less of B 2  O 3 , 15 to 25% of ZnO, 10 to 25% of CaO, .Badd..[.2.]..Baddend. .Iadd.4 .Iaddend.to 20% of Li 2  O, 10% or less of K 2  O, 50 to 60% AlPO 4 , 25 to 35% .Iadd.of .Iaddend.Y 2  O 3 , 5% or less of P 2  O 5 , 5% or less of ZrO 2 , 5% or less of CaF 2 , 6% or less of AlN, 5% or less of Cs 2  O, and 5% or less of V 2  O 5 , each by weight, and which .Iadd.glass .Iaddend.softens at a temperature not higher than the melting point of the wiring conductor .[.layer.]. .Iadd.layers .Iaddend.and wherein the ceramic .[.layer has.]. .Iadd.layers have .Iaddend.a thermal expansion coefficient lower than that of the wiring .[.layer.]. .Iadd.layers .Iaddend.but not lower than one half that of the wiring .[.layer but not lower than one half of that of the wiring layer.]. .Iadd.layers.Iaddend.. 
     
     
       2. A ceramic multilayer circuit board according to claim 1, wherein said ceramic layers are formed from a glass consisting essentially of 75 to 85% SiO 2 , 2 to 6% Al 2  O 3 , 10 to 15% Li 2  O, 2 to 3% K 2  O, and 1 to 3% CaF 2 . 
     
     
       3. A ceramic multilayer circuit board according to claim 1, wherein the ceramic layer has a thermal expansion coefficient not lower than 7.2×10 -6  /°C. and a specific dielectric constant at 1 MHz not higher than 4.5, and the wiring conductor layer is formed from a either gold, or silver, or copper. 
     
     
       4. A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than and not lower than one half of, that of the wiring conductor layer, and further comprises hollow silica having a particle diameter of not more than .Badd.10 μm.]..Baddend. .Iadd.100 μm .Iaddend.dispersed in a glass which softens at a temperature not higher than the melting point of the wiring conductor layer. 
     
     
       5. A ceramic multilayer circuit board according to claim 4, wherein the content of said hollow silica microsphered is 35 to 60% by volume relative to the ceramic layer. .[. 
     
     
       6.  A semiconductor module comprising a ceramic multilayer circuit board mounted with a ceramic carrier substrate, said carrier substrate being mounted with a semiconductor device, in which the carrier substrate and the multilayer circuit board each comprise ceramic layers and wiring conductor layers laminated alternately, and the ceramic layer has a thermal expansion coefficient lower than, and not lower than one half of, that of the wiring conductor layer and further the ceramic layer comprises a glass which softens at a temperature not higher than the melting point of the wiring conductor layer..]. .[.7. A semiconductor module according to claim 6, wherein the ceramic carrier substrate and the semiconductor device are joined by means of solder bump, said solder bump being covered 
     
     
        with an organic resin..]. 8. A semiconductor module .[.according to claim 7,.]. .Iadd.comprising a ceramic multilayer circuit board mounted with a ceramic carrier substrate, said carrier substrate being mounted with a semiconductor device, in which the carrier substrate and the multilayer circuit board each comprises ceramic layers and wiring conductor layers laminated alternately, and the ceramic layers have a thermal expansion coefficient lower than, and not lower than one half of that of the wiring conductor layers and further the ceramic layers comprise a glass which softens at a temperature not higher than the melting point of the wiring conductor layers, wherein the ceramic carrier substrate and the semiconductor device are joined by means of solder bumps, said solder bumps being covered with an organic resin, and .Iaddend.wherein the organic resin comprises 100 parts by weight of said resin, 5 to 10 parts by weight of rubber particles, and 35 to 60% by volume of ceramic powders. 
     
     
        . A semiconductor module according to claim 8, wherein the rubber particle comprises at least one member selected from polybutadiene and silicone rubber, and the ceramic powder comprises at least one member selected from quartz, silicon carbide, silicon nitride, calcium carbonate, and silicon carbide containing berylium. .Iadd.10. A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers have a thermal expansion coefficient lower than, and not lower than one half of that of the wiring conductor layers, and further comprise a silica filler having a particle diameter of not more than 100 μm dispersed in a glass which softens at a temperature not higher than the melting temperature of the wiring 
     
     
        conductor layers. .Iaddend. .Iadd.11.  A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprised 50 to 70% of SiO 2 , 15 to 25% of Al 2  O 3  and 15 to 25% of MgO, and which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. .Iaddend. .Iadd.12. A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprises 70 to 95% of SiO 2 , 4 to 15% of Li 2  O and 1 to 10% of Al 2  O 2 , and which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. .Iaddend. .Iadd.13. A ceramic multilayer circuit board comprising layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprises 30 to 50% of SiO 2 , 30 to 50% of B 2  O 3 , 10 to 25% of CaO and 10 to 20% of Li 2  O, and which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. 
     
     
        .Iaddend. .Iadd.14.  A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprises 55 to 82% of SiO 2 , 15 to 25% of B 2  O 3 , 2 to 15% of Li 2  O and 1 to 10% of Al 2  O 3 , which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. .Iaddend. .Iadd.15. A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprises 55 to 65% of SiO 2 , and 15 to 25% of ZnO, and which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. .Iaddend. .Iadd.16. A ceramic multilayer circuit board comprising ceramic layer and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which comprises 20 to 30% of SiO 2 , and 10 to 15%of Li 2  O, 40 to 50% of B 2  O 3  and 15 to 25% of CaO, and which softens at a temperature not higher than the melting point of the wiring conductor layers and wherein the ceramic layers have a thermal expansion coefficient lower than that of the wiring conductor layers. .Iaddend.