USRE35109EExpiredUtility

Semiconductor device and method for fabricating the same

34
Assignee: FUJITSU LTDPriority: Oct 8, 1982Filed: Jan 7, 1993Granted: Dec 5, 1995
Est. expiryOct 8, 2002(expired)· nominal 20-yr term from priority
H10W 90/756H10W 74/00H10W 72/5522H10W 72/5449H10W 72/5445H10W 72/534H10W 74/131H10W 74/121H10W 74/111H10W 74/016H10W 70/475H10W 70/411H10W 70/40H10W 70/442Y10S257/916H10W 70/458H10W 95/00H10W 70/04H10W 70/421H10W 76/18H10W 90/811
34
PatentIndex Score
5
Cited by
13
References
10
Claims

Abstract

In a plastic molded semiconductor device in which inner leads overlap a semiconductor chip in a molded plastic body, the width of the chip may be close to the width of the plastic body without a decrease in the high resistance of the inner leads to the pull out thereof from the plastic body, and the layout of the inner leads may be unrestricted since the inner leads may occupy the region above the chip.

Claims

exact text as granted — not AI-modified
We claim: 
     
       1. A semiconductor device having a molded plastic body, said semiconductor device comprising: a semiconductor chip having a major surface and having electrodes formed on said major surface, said semiconductor chip being encapsulated in the molded plastic body;   .Iadd.a single piece metal member having .Iaddend.a thin, flat, self-supportive metal stage .Iadd.portion .Iaddend.onto which said semiconductor chip is bonded so that said major surface is opposite to and faces said metal stage .Iadd.portion and a pair of extending portions each of which is extending from opposite sides of said stage portion toward a surface of the molded plastic body.Iaddend., said stage .Iadd.portion .Iaddend.being encapsulated in said molded plastic body;   a plurality of leads, each comprising an inner lead end portion embedded in the molded plastic body and an outer lead end portion extending outside of the molded plastic body, said inner lead end portions of the leads being spaced apart from said semiconductor chips, said inner lead end portion of at least one of the leads overlapping said stage .Iadd.portion .Iaddend.and extending over said major surface of said semiconductor chip; and   interconnection wires interconnecting each of said inner lead end portions and each of said electrodes of said semiconductor chip.   
     
     
       2. A semiconductor device having a molded plastic body, said semiconductor device comprising: a semiconductor chip having electrodes and being encapsulated in the molded plastic body;   .Iadd.a single piece metal member having .Iaddend.a thin, flat, self-supportive metal stage .Iadd.portion .Iaddend.onto which said semiconductor chip is bonded .Iadd.and a pair of extending portions each of which is extending from opposite sides of said stage portion toward a surface of the molded plastic body.Iaddend., said stage .Iadd.portion .Iaddend.being encapsulated in said molded plastic body;   a plurality of leads, each comprising an inner lead end portion embedded in the molded plastic body and an outer lead end portion extending outside of the molded plastic body, said inner lead end portions of the leads being spaced apart from said semiconductor chips, said inner lead end portion of at least one of the leads overlapping said stage .Iadd.portion .Iaddend.and said semiconductor chip; and   interconnection wires interconnecting each of said inner lead end portions and each of said electrodes of said semiconductor chip, wherein said electrodes are arranged along at least one side of said semiconductor chip and said inner lead end portion of at least one of said leads extends over said semiconductor chip to a position adjacent to inner sides of said electrodes relative to said semiconductor chip.   
     
     
       3. A semiconductor device according to claim 2, wherein an insulating film covers an entire top surface of the semiconductor chip except for the electrodes thereof. 
     
     
       4. A semiconductor device according to claim 2, wherein an insulating film exists in part of the space between the semiconductor chip and only the inner lead end portions of the leads. 
     
     
       5. A semiconductor device according to claim 4, wherein the insulating film between the semiconductor chip and the inner lead end portions of the leads is adhered to the end portion of the leads. 
     
     
       6. A semiconductor device according to claim 4, wherein the insulating film between the semiconductor chip and the inner lead end portions of the leads is adhered to the semiconductor chip. 
     
     
       7. A semiconductor device according to claim 3 or 4, wherein the insulating film is of polyimide. 
     
     
       8. A semiconductor device according to claim 3 or 4, wherein the insulating film is silicone. 
     
     
       9. A semiconductor device according to claim 2, wherein the inner lead end portions of the leads are arranged in at least one row, said electrodes of the semiconductor chip being arranged along two sides of the semiconductor chip forming rows of electrodes which run perpendicular to at least one row of leads. 
     
     
       10. A semiconductor device having a molded plastic body, said semiconductor device comprising: a semiconductor chip having electrodes and being encapsulated in the molded plastic body;   .Iadd.a single piece metal member having .Iaddend.a thin, flat, self-supportive metal stage .Iadd.portion .Iaddend.onto which said semiconductor chip is bonded .Iadd.and a pair of extending portions each of which is extending from opposite sides of said stage portion toward a surface of the molded plastic body.Iaddend., said stage .Iadd.portion .Iaddend.being encapsulated in said molded plastic body;   a plurality of leads, each comprising an inner lead end portion embedded in the molded plastic body and an outer lead end portion extending outside of the molded plastic body, said inner lead end portions of the leads being spaced apart from said semiconductor chips, said inner lead end portion of at least one of the leads overlapping said stage .Iadd.portion .Iaddend.and said semiconductor chip; and   interconnection wires interconnecting each of said inner lead end portions and each of said electrodes of said semiconductor chip, wherein the stage is a capacitor made of a ceramic plate having two electrodes, each electrode being interconnected to one of the leads.

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