Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorus

Abstract

A semiconductor layer of In 1-x Tl x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As 1-y P y and 0<x<1, 0<y<1.

We claim: 
     
       1. An infrared detector or emitter device comprising a substrate, and a semiconductor layer of In 1-x  Tl x  Q carried by the substrate, where Q is selected from the group consisting essentially of As 1-y  P y  and . .0<x<.!..Iadd.0<x<1.Iaddend., 0≦y≦1. 
     
     
       2. The device of claim 1 where y=1. 
     
     
       3. The device of claim 2 where x=0.67. 
     
     
       4. The device of claim 2 where x=0.57. 
     
     
       5. The device of claim 1 where x=0.24. 
     
     
       6. The device of claim 2 wherein the layer is formed on the substrate and the substrate portion on which the layer is formed consists essentially of InP. 
     
     
       7. The device of claim 6 wherein the layer is doped to have a first conductivity polarization. 
     
     
       8. The device of claim 7 wherein another layer of In 1-x  Tl x  P having the second conductivity polarization is formed on the layer having the first polarization to form a p-n homojunction. 
     
     
       9. The device of claim 1 wherein y=0. 
     
     
       10. The device of claim 9 wherein x=0.15. 
     
     
       11. The device of claim 10 wherein the layer is formed on the substrate and the substrate portion on which the layer is formed consists essentially of InAs. 
     
     
       12. The device of claim 1 wherein the layer is doped to have a first conductivity polarization, and a second layer having substantially the same compound as the layer having the first conductivity polarization contacting the first conductivity polarization layer to form a p-n homojunction, the second layer being doped to have a second conductivity polarization. 
     
     
       13. The device of claim 1 wherein the layer is formed on the substrate and the substrate portion on which the layer is formed consists essentially of InQ, the layer and substrate having substantially the same lattice constants. 
     
     
       14. The device of claim 13 where y=1. 
     
     
       15. The device of claim 13 where y=0. 
     
     
       16. The device of claim 13 where 0<y<1. 
     
     
       17. The device of claim 1 where 0<y<1. 
     
     
       18. The device of claim 1 wherein the device is a detector and the substrate includes a second layer of In 1-z  Tl z  Q, where z is less than x, the second layer being positioned above the In 1-x  Tl x  Q layer so certain optical radiation wavelengths incident on the second layer pass through the second layer and are absorbed by the In 1-x  Tl x  Q layer and other optical radiation wavelengths incident on the second layer are absorbed thereby. 
     
     
       19. The device of claim 18 where y=1, x=0.67, z=0.57. 
     
     
       20. The device of claim 1 where y=1, x=0.24. 
     
     
       21. The device of claim 1 further including an ohmic contact on the layer. 
     
     
       22. In In 1-x  Tl x  Q, where Q is selected from the group consisting essentially of As 1-y  P y  and 0<x<1, 0≦y≦1. 
     
     
       23. The composition of claim 22 where y=0. 
     
     
       24. The composition of claim 22 where y=1. 
     
     
       25. The composition of claim 22 where 0<y<1. .Iadd. 
     
     
       26.  A stoichiometric semiconductor compound comprising the elements In, Tl, and including at least one of the elements of As and P, wherein the compound is stoichiometric with respect to at least three of said elements. .Iaddend..Iadd. 
     
     
       27.  The stoichiometric semiconductor compound of claim 26 wherein the compound is stoichiometric with respect to four elements including at least three of said four elements. .Iaddend..Iadd.28. The stoichiometric semiconductor compound of claim 27 wherein the compound includes dopants. 
     
     
        .Iaddend..Iadd.29.  The stoichiometric semiconductor compound of claim 26 wherein the compound is an alloy including at least three of said elements 
     
     
        in a zinc blende structure. .Iaddend..Iadd.30.  The stoichiometric semiconductor compound of claim 26 wherein the compound is stoichiometric with respect to four elements, including said four elements. 
     
     
        .Iaddend..Iadd.31.  An infrared detector or emitter device comprising a substrate, and a semiconductor layer carried by the substrate, the layer including a stoichiometric semiconductor compound comprising the elements In, Tl, and including at least one of the elements of As and P, wherein the compound is stoichiometric with respect to at least three of said 
     
     
        elements carried by the substrate. .Iaddend..Iadd.32.  The infrared detector or emitter device of claim 31 wherein the compound is stoichiometric with respect to four elements, including at least three of said four elements. .Iaddend..Iadd.33. The infrared detector or emitter device of claim 32 wherein the compound includes dopants. 
     
     
        .Iaddend..Iadd.  .  The infrared detector or emitter device of claim 31 wherein the compound is stoichiometric with respect to four elements, including said four elements.