Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects

Abstract

Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added. However, the resistivity of the films can become excessive. In addition, a new type of low density hillock can form. Layering of the films eliminates all hillocks and results in films of low resistivity. Such layered and homogeneous films made with Al-Si and Ti were found to be dry etchable. Electrical shorts in test structures with two levels of metal and LPCVD SiO 2 as an interlayer dielectric have been characterized and layered films using Al-Si and Ti gave excellent results.

What is claimed is:  
     
       1. In a semiconductor device, a conductive interconnect level formed on a silicon substrate, including an aluminum silicon titanium alloy wherein said titanium is 2-3.5 at. % of said alloy. 
     
     
       2. In a semiconductor device, a conductive formed on a silicon substrate including a homogeneous film of Al-Si with a refractory metal selected from the group consisting of titanium, tantalum, zirconium, hafnium, vanadium chromium, said titanium being 1-4 at. % of said film. 
     
     
       3. A semiconductor device as claimed in claim  2  wherein said refractory metal is titanium. 
     
     
       4. A semiconductor device as claimed in claim  3  wherein said titanium is 2-3.5 at. % of said film. 
     
     
       5. A semiconductor device as claimed in claim  3  wherein said titanium is about 2.5 at. % of said film. 
     
     
       6. A semiconductor device as claimed in claim  5  wherein said alloy includes about 1% silicon by weight. 
     
     
       7. An integrated circuit comprising a silicon substrate and a contact interconnect level comprising a homogeneous film of Al-Si with titanium wherein said titanium is 1-4 at. % of said film. 
     
     
       8. In a semiconductor device, a conductive level formed on a silicon substrate, including alternating layers of Al-Si with layers of a refractory metal. 
     
     
       9. A semiconductor device as claimed in claim  10   8 , wherein said refractory metal is titanium. 
     
     
       10. A semiconductor device as claimed in claim  8  wherein said refractory metal is chosen from the group consisting of titanium, tantalum, zirconium, hafnium, Vanadium and chromium. 
     
     
       11. A semiconductor device as claimed in claim  9  wherein the conductive level is laid down on silicon or silicon dioxide, the Al-Si layer adjoining the silicon or SiO 2  layer. 
     
     
       12. A semiconductor device as claimed in claim  8  or  10  wherein said conductive level is formed of repeating layers of said Al-Si and said refractory metal. 
     
     
       13. A semiconductor device as claimed in claim  9  or  11  wherein said conductive level is formed of repeating layers of said Al-Si and said titanium. 
     
     
       14. A semiconductor device as claimed in claim  11  including at least two layers of titanium. 
     
     
       15. A semiconductor device as claimed in claim  11  or  14  including a layer of titanium on top of every layer of Al-Si. 
     
     
       16. A device as claimed in claim  8 , wherein the alternating layers include one layer of Al- Si between first and second layers of the refractory metal.   
     
     
       17. A device as claimed in claim  16 , wherein said refractory metal is chosen from the group consisting of titanium, tantalum, zirconium, hafnium, Vanadium, and chromium. 
     
     
       18. A device as claimed in claim  17 , wherein the one layer of Al- Si is approximately  1  at.  %  Si.   
     
     
       19. A device as claimed in claim  16 , wherein the one layer of Al- Si is approximately  1  at.  %  Si.   
     
     
       20. A device as claimed in claim  8 , wherein at least one layer of Al- Si is disposed on a layer of SiO   2 . 
     
     
       21. A device as claimed in claim  20 , wherein the at least one layer of Al- Si is approximately  1  at.  %  Si.   
     
     
       22. A device as claimed in claim  8 , wherein the one layer of Al- Si is approximately  1  at.  %  Si.   
     
     
       23. A device as claimed in claim  8 , wherein a first pair of alternating layers includes a first layer of Al- Si and a first layer of the refractory metal, and a second pair of alternating layers includes a second layer of Al - Si and a second layer of the refractory metal.   
     
     
       24. A device as claimed in claim  23 , further comprising an insulator disposed below the first pair of layers. 
     
     
       25. A device as claimed in claim  24 , wherein the one layer of Al- Si is approximately  1  at.  %  Si.   
     
     
       26. A device as claimed in claim  23 , further comprising an insulator disposed between the first pair and the second pair of layers.