USRE37051EExpiredUtility

Semiconductor gain medium with multimode and single mode regions

70
Assignee: SDL INCPriority: Jan 7, 1993Filed: Oct 15, 1999Granted: Feb 13, 2001
Est. expiryJan 7, 2013(expired)· nominal 20-yr term from priority
G02B 6/12004H01S 5/146H01S 3/0818H01S 5/141H01S 5/0625H01S 5/125H01S 5/0655H01S 5/0286H01S 5/4087H01S 5/1085H01S 5/1064H01S 5/20H01S 5/187H01S 5/2063H01S 5/065H01S 5/026H01S 5/04256H01S 2301/166H01S 5/06256H01S 5/1003H01S 5/14H01S 5/10H01S 5/2036G02B 6/305H01S 3/113H01S 5/1014H01S 5/50H01S 5/4025H01S 5/1082H01S 5/4062H01S 5/1215H01S 5/185
70
PatentIndex Score
17
Cited by
7
References
8
Claims

Abstract

A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A semiconductor gain medium comprising: 
       a multimode region having a gain portion and providing light propagation with a diverging phase front to a first reflector comprising a cleaved facet;  
       at least one single mode region having a first end coupled to a first end of said multimode region opposite said first reflecting surface  reflector and having at a second end a second reflector comprising a grating reflector formed in said single mode region; and  
       an optical cavity formed between said first and second reflectors.  
     
     
       2. The semiconductor gain medium of claim  1  wherein the first end of said multimode  region having the gain portion is a  flared region extending from said multimode region first end . 
     
     
       3. The semiconductor gain medium of claim  1  wherein said optical cavity establishes a resonant optical cavity. 
     
     
       4. The semiconductor gain medium of claim  1  further comprising means for applying a tuning current to said grating reflector. 
     
     
       5. The semiconductor gain medium of claim  1  further comprising means for applying a pump current to at least a portion of said single mode region. 
     
     
       6. The semiconductor gain medium of claim  1  further comprising means for applying a phasing current to a portion of said single mode region. 
     
     
       7. The semiconductor gain medium of claim  1  further comprising means for applying a tuning current to said grating reflector to adjust the wavelength response of said grating reflector and means for applying a phasing current to a portion of said single mode region to adjust the optical path length of said optical cavity to match the phase of the light propagating in said optical cavity to a selected wavelength. 
     
     
       8. The semiconductor gain medium of claim  1  further comprising means for differential pumping said multimode  region having the gain portion.

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