Wiring pattern of semiconductor integrated circuit device

Abstract

As shown in FIG. 4 , a wiring pattern of a semiconductor integrated circuit device of the present invention comprises a wiring portion extending from a connection hole and a connection portion located on the connection hole and having a matching allowance with respect to said connection hole on said wiring portion side being formed wider than a predetermined matching allowance by a predetermined width with which a required yield of successful matching can be assured.

What is claimed is:  
     
       1. A semiconductor integrated circuit device comprising: 
       a semiconductor substrate;  
       a square-shaped connection hole formed in said semiconductor substrate;  
       a first wiring section formed of a conductive film forming plating sidewalls of said connection hole and having four elements each having a substantially rectangular cross-section adjacent to a respective one of four edges of said connection hole, each of said four elements having a sidewall substantially aligned with a respective plating sidewall of said square-shaped connection hole adjacent to a respective one of the four edges; and  
       a line-like second wiring section formed of a conductive film having a substantially rectangular cross-section, including a portion connected to a first element of said first wiring section at a juncture at which it has a width narrower than a length of the first element of said first wiring section adjacent to the respective edge of said connection hole,  
       wherein said first wiring section forming plating sidewalls of said connection hole is thinner than each of said four elements from the respective one of the four edges to a major surface of the conductive film parallel to the substrate, and a first width, defined by a width of the first element at the major surface from the respective edge of said connection hole, is greater than second to fourth widths, respectively defined by corresponding widths of the second element, the third element, and the fourth element from the respective edges of said connection hole.  
     
     
       2. A device according to claim  1 , wherein said connection hole is approximately 3.0 μm×3.0 μm square. 
     
     
       3. A device according to claim  1 , wherein the first width is approximately 1.5 μm, and the second and third widths are approximately 0.7 μm. 
     
     
       4. A device according to claim  1 , wherein the wiring width of said second wiring section is approximately 2.0 μm. 
     
     
       5. A device according to claim  1 , wherein said connection hole is one of a contact hole and a through hole. 
     
     
       6. A semiconductor integrated circuit device, comprising: 
       
         a first wiring portion formed in and around a connection hole, the connection hole having edges and a center;  
       
         a second wiring portion having an end portion connected to the first wiring portion, the width of the end portion being less than twice the minimum center - to - edge distance of the connection hole, the second wiring portion, the first wiring portion, and the connection hole defining first, second, and third distances;    
       
         the first distance being the minimum distance from the end portion of the second wiring portion to an edge of the connection hole, the edge of the connection hole closest to the end portion of the second wiring portion being a first edge;  
       
       
         the second distance being the minimum distance from a second edge of the connection hole opposite to the first edge to an edge of the first wiring portion; and  
       
       
         the third distance being the minimum distance from a third edge of the connection hole other than the first edge and the second edge to an edge of the first wiring portion;  
       
       
         wherein the first distance is greater than the second distance, the first distance is greater than the third distance, and the second distance is substantially equal to the third distance. 
       
     
     
       7. The device according to claim  6 , wherein an angle defined by a line perpendicular to the first edge and a line perpendicular to the second edge and having a vertix at the center of the connection hole measures  180 °. 
     
     
       8. The device according to claim  7 , wherein an angle defined by a line perpendicular to the first edge and a line perpendicular to the third edge and having a vertix at the center of the connection hole measures  90 °. 
     
     
       9. The device according to claim  8 , wherein the first wiring portion includes a notch portion in the connection hole. 
     
     
       10. The device according to claim  8 , wherein the connection hole has a square shape. 
     
     
       11. The device according to claim  10 , wherein the connection hole is approximately  3 . 0  μm× 3 . 0  μm square. 
     
     
       12. The device according to claim  8 , wherein the first wiring portion has a rectangular shape around the connection hole. 
     
     
       13. The device according to claim  8 , wherein the width of the end portion of the second wiring portion is approximately  2 . 0  μm. 
     
     
       14. The device according to claim  8 , wherein the first distance is approximately  1 . 5  μm. 
     
     
       15. The device according to claim  14 , wherein the second distance is approximately  0 . 7  μm. 
     
     
       16. The device according to claim  15 , wherein the third distance is approximately  0 . 7  μm. 
     
     
       17. The device according to claim  8 , wherein the connection hole is one of a connection hole and a through hole. 
     
     
       18. A semiconductor integrated circuit device, comprising: 
       
         a first wiring portion formed in and around a connection hole, the connection hole having edges and a center;  
       
         a second wiring portion having an end portion connected to the first wiring portion at a first edge of the first wiring portion, the width of the end portion being less than twice the minimum center - to - edge distance of the connection hole; and    
         a third wiring portion defined by the first wiring portion, the second wiring portion, and a straight line from one end of the first edge of the first wiring portion to the second wiring portion, an angle θ being between the straight line and the first edge of the first wiring portion, wherein  (   0 <θ<π/ 2   ). 
     
     
       19. The device according to claim  18 , wherein the first wiring portion includes a notch portion in the connection hole. 
     
     
       20. The device according to claim  18 , wherein the connection hole has a square shape. 
     
     
       21. The device according to claim  20 , wherein the connection hole is approximately  3 . 0  μm× 3 . 0  μm square. 
     
     
       22. The device according to claim  18 , wherein the first wiring portion has a rectangular shape around the connection hole. 
     
     
       23. The device according to claim  18 , wherein the connection hole is one of a contact hole and a through hole. 
     
     
       24. A semiconductor integrated circuit device comprising: 
       
         a first wiring portion in and around a connection hole, the connection hole having edges and a center;  
       
       
         a second wiring portion having an end portion connected to the first wiring portion at a first edge of the first wiring portion;  
       
         a third wiring portion defined by the first wiring portion, the second wiring portion, and a first straight line from one end of the first edge of the first wiring portion to the second wiring portion, with an angle θ being between the first straight line and the first edge of the first wiring portion, wherein  (   0 <θ<π/ 2   ) ; and    
         a fourth wiring portion defined by the first wiring portion, the second wiring portion, and a second straight line from the other end of the first edge of the first wiring portion to the second wiring portion, with an angle θ being between the second straight line and the first edge of the first wiring portion, wherein  (   0 <θ<π/ 2   ). 
     
     
       25. The device according to claim  24 , wherein the width of the end portion of the second wiring portion is less than twice the minimum center- to - edge distance of the connection hole.   
     
     
       26. The device according to claim  24 , wherein no wiring portion is connected to the edges of the first wiring portion other than said first edge. 
     
     
       27. The device according to claim  24 , wherein the first wiring portion includes a notch portion in the connection hole. 
     
     
       28. The device according to claim  24 , wherein the connection hole has a square shape. 
     
     
       29. The device according to claim  28 , wherein the connection hole is approximately  3 . 0  μm× 3 . 0  μm square. 
     
     
       30. The device according to claim  24 , wherein the first wiring portion has a rectangular shape around the connection hole. 
     
     
       31. The device according to claim  24 , wherein the connection hole is one of a contact hole and a through hole.